(19)
(11) EP 3 018 711 A8

(12) CORRECTED EUROPEAN PATENT APPLICATION
Note: Bibliography reflects the latest situation

(15) Correction information:
Corrected version no 1 (W1 A1)

(48) Corrigendum issued on:
10.08.2016 Bulletin 2016/32

(43) Date of publication:
11.05.2016 Bulletin 2016/19

(21) Application number: 15192887.6

(22) Date of filing: 04.11.2015
(51) International Patent Classification (IPC): 
H01L 23/495(2006.01)
(84) Designated Contracting States:
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated Extension States:
BA ME
Designated Validation States:
MA MD

(30) Priority: 04.11.2014 JP 2014224009

(71) Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA
Toyota-shi, Aichi-ken, 471-8571 (JP)

(72) Inventor:
  • KADOGUCHI, Takuya
    Toyota-shi, Aichi-ken, 471-8571 (JP)

(74) Representative: Kuhnen & Wacker 
Patent- und Rechtsanwaltsbüro Prinz-Ludwig-Straße 40A
85354 Freising
85354 Freising (DE)

   


(54) SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SEMICONDUCTOR DEVICE


(57) A semiconductor device (2) includes first and second semiconductor elements (3, 5) and first and second conductive members (10, 29). A first electrode (3a) on the first semiconductor element is bonded to a first stack part (12) of the first conductive member by a first bonding layer (8a). A second electrode (5b) on the second semiconductor element is bonded to a second stack part (25) of the second conductive member by a second bonding layer (8f). A first joint part (13) of the first conductive member is bonded to a second joint part (26) of the second conductive member by an intermediate bonding layer (8g). A first surface of the first joint part facing the second joint part, a side surface of the first joint part continuous from the first surface, a second surface of the second joint part facing the first joint part, and a side surface of the second joint part continuous from the second surface are covered by nickel layers (19a, 19b).