| (84) |
Designated Contracting States: |
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AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL
NO PL PT RO RS SE SI SK SM TR |
| (30) |
Priority: |
18.09.2013 US 201361879373 P
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| (43) |
Date of publication of application: |
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27.07.2016 Bulletin 2016/30 |
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Proprietor: Raytheon Technologies Corporation |
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Farmington, CT 06032 (US) |
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| (72) |
Inventor: |
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- SCHMIDT, Wayde R.
Pomfret Center, Connecticut 06259 (US)
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| (74) |
Representative: Dehns |
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St. Bride's House
10 Salisbury Square London EC4Y 8JD London EC4Y 8JD (GB) |
| (56) |
References cited: :
JP-A- 2005 223 126 US-A- 4 946 809 US-A1- 2013 026 482
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JP-A- 2008 098 512 US-A1- 2006 134 415
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- DELCAMP A ET AL: "Al@?O@?N and Al@?O@?B@?N thin films applied on Si@?O@?C fibers",
COMPOSITES SCIENCE AND TECHNOLOGY, ELSEVIER, AMSTERDAM, NL, vol. 70, no. 4, 1 April
2010 (2010-04-01), pages 622-626, XP026911973, ISSN: 0266-3538, DOI: 10.1016/J.COMPSCITECH.2009.12.012
[retrieved on 2010-02-17]
- WATANABE, S. ET AL.: 'Refractive indices BxAl1-xN(x=0-0.012) and ByGal-yN (y=0-0.023)
epitaxial layers in ultraviolet region' PHYS. STAT. SOL. C vol. 0, no. 7, December
2003, pages 2691 - 2694, XP055331092
- NAKAJIMA, A. ET AL.: 'Growth of BxAll-xN layers using decaborane on SiC substrate'
JOURNAL OF CRYSTAL GROWTH vol. 278, no. 1-4, May 2005, pages 437 - 442, XP004857844
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