(19)
(11) EP 3 079 012 A3

(12) EUROPEAN PATENT APPLICATION

(88) Date of publication A3:
14.12.2016 Bulletin 2016/50

(43) Date of publication A2:
12.10.2016 Bulletin 2016/41

(21) Application number: 16161049.8

(22) Date of filing: 18.03.2016
(51) International Patent Classification (IPC): 
G03F 1/26(2012.01)
(84) Designated Contracting States:
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated Extension States:
BA ME
Designated Validation States:
MA MD

(30) Priority: 31.03.2015 JP 2015072658

(71) Applicant: Shin-Etsu Chemical Co., Ltd.
Tokyo (JP)

(72) Inventors:
  • SASAMOTO, Kouhei
    Joetsu-shi, Niigata (JP)
  • KOSAKA, Takuro
    Joetsu-shi, Niigata (JP)
  • INAZUKI, Yukio
    Joetsu-shi, Niigata (JP)
  • KANEKO, Hideo
    Joetsu-shi, Niigata (JP)

(74) Representative: Ter Meer Steinmeister & Partner 
Patentanwälte mbB Nymphenburger Straße 4
80335 München
80335 München (DE)

   


(54) HALFTONE PHASE SHIFT MASK BLANK AND HALFTONE PHASE SHIFT MASK


(57) A halftone phase shift mask blank is provided comprising a transparent substrate and a halftone phase shift film which is composed of a silicon base material having a Si+N+O content of at least 90 at%, a Si content of 30-70 at%, a N+O content of 30-60 at%, and an O content of up to 30 at%, and has a thickness of up to 70 nm. The halftone phase shift film is thin enough for mask pattern processing, undergoes minimal pattern size variation degradation upon exposure to sub-200 nm radiation, and maintains a necessary phase shift and transmittance.







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