(19)
(11) EP 3 130 014 A1

(12)

(43) Date of publication:
15.02.2017 Bulletin 2017/07

(21) Application number: 15777034.8

(22) Date of filing: 02.04.2015
(51) International Patent Classification (IPC): 
H01L 43/10(2006.01)
H01L 43/12(2006.01)
H01L 43/02(2006.01)
(86) International application number:
PCT/US2015/024031
(87) International publication number:
WO 2015/157080 (15.10.2015 Gazette 2015/41)
(84) Designated Contracting States:
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated Extension States:
BA ME
Designated Validation States:
MA

(30) Priority: 09.04.2014 US 201414249183

(71) Applicant: Micron Technology, Inc.
Boise, ID 83707-0006 (US)

(72) Inventors:
  • SANDHU, Gurtej S.
    Boise, Idaho 83706 (US)
  • PANDEY, Sumeet C.
    Boise, Idaho 83716 (US)

(74) Representative: Carpmaels & Ransford LLP 
One Southampton Row
London WC1B 5HA
London WC1B 5HA (GB)

   


(54) MEMORY CELLS, SEMICONDUCTOR STRUCTURES, SEMICONDUCTOR DEVICES, AND METHODS OF FABRICATION