(19)
(11) EP 3 217 436 B8

(12) CORRECTED EUROPEAN PATENT SPECIFICATION
Note: Bibliography reflects the latest situation

(15) Correction information:
Corrected version no 1 (W1 B1)

(48) Corrigendum issued on:
10.03.2021 Bulletin 2021/10

(45) Mention of the grant of the patent:
30.12.2020 Bulletin 2020/53

(21) Application number: 15856987.1

(22) Date of filing: 12.08.2015
(51) International Patent Classification (IPC): 
H01L 29/872(2006.01)
H01L 21/205(2006.01)
H01L 29/26(2006.01)
 H01L 21/20(2006.01)
H01L 21/329(2006.01)
(86) International application number:
PCT/JP2015/072863
(87) International publication number:
WO 2016/072122 (12.05.2016 Gazette 2016/19)

(54)

SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREFOR

HALBLEITERBAUELEMENT UND HERSTELLUNGSVERFAHREN DAFÜR

DISPOSITIF À SEMI-CONDUCTEUR ET PROCÉDÉ DE FABRICATION ASSOCIÉ

(84) Designated Contracting States:
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

(30) Priority: 04.11.2014 JP 2014224076

(43) Date of publication of application:
13.09.2017 Bulletin 2017/37

(73) Proprietor: Air Water Inc.
Osaka-shi Osaka 542-0081 (JP)

(72) Inventors:
  • FUKAZAWA, Akira
    Matsumoto-shi, Nagano 390-1701 (JP)
  • OUCHI, Sumito
    Matsumoto-shi, Nagano 390-1701 (JP)

(74) Representative: Hering, Hartmut 
Patentanwälte Berendt, Leyh & Hering Innere Wiener Strasse 20
81667 München
81667 München (DE)


(56) References cited: : 
EP-A2- 1 947 700
JP-A- 2007 036 010
JP-A- 2013 179 121
JP-A- 2014 076 925
 JP-A- 2007 036 010
JP-A- 2009 081 269
JP-A- 2014 076 925
US-A1- 2006 138 448
   
  • KOMIYAMA JUN ET AL: "Suppression of crack generation in GaN epitaxy on Si using cubic SiC as intermediate layers", APPLIED PHYSICS LETTERS, A I P PUBLISHING LLC, US, vol. 88, no. 9, 27 February 2006 (2006-02-27), pages 91901-091901, XP012083062, ISSN: 0003-6951, DOI: 10.1063/1.2175498
   
Note: Within nine months from the publication of the mention of the grant of the European patent, any person may give notice to the European Patent Office of opposition to the European patent granted. Notice of opposition shall be filed in a written reasoned statement. It shall not be deemed to have been filed until the opposition fee has been paid. (Art. 99(1) European Patent Convention).