ATBECHDEDKESFRGBGRITLILUNLSEMCPTIESILTLVFIROMKCYALTRBGCZEEHUPLSK..HRIS..MTNORS..SM..................JBDM Ver 1.7.2 (20 November 2019) - 2999001/03217436CORRECTED EUROPEAN PATENT SPECIFICATIONB8B120210310W173deBibliographieenBibliographyfrBibliographieEP15856987.1201508122017050220190410jaenen201422407620141104JP2021031020211020170913201737202012302020532020081020210310202110H01L 29/872 20060101AFI20180517BHEP H01L 21/20 20060101ALI20180517BHEP H01L 21/205 20060101ALI20180517BHEP H01L 21/329 20060101ALI20180517BHEP H01L 29/26 20060101ALI20180517BHEP deHALBLEITERBAUELEMENT UND HERSTELLUNGSVERFAHREN DAFÜRenSEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREFORfrDISPOSITIF À SEMI-CONDUCTEUR ET PROCÉDÉ DE FABRICATION ASSOCIÉEP-A2- 1 947 700JP-A- 2007 036 010JP-A- 2007 036 010JP-A- 2009 081 269JP-A- 2013 179 121JP-A- 2014 076 925JP-A- 2014 076 925US-A1- 2006 138 448KOMIYAMA JUN ET AL: "Suppression of crack generation in GaN epitaxy on Si using cubic SiC as intermediate layers", APPLIED PHYSICS LETTERS, A I P PUBLISHING LLC, US, vol. 88, no. 9, 27 February 2006 (2006-02-27), pages 91901-091901, XP012083062, ISSN: 0003-6951, DOI: 10.1063/1.217549820180524FUKAZAWA, Akirac/o Air Water R&D Co., Ltd., 4007-3 Yamato AzusagawaMatsumoto-shi, Nagano 390-1701JPOUCHI, Sumitoc/o Air Water R&D Co., Ltd., 4007-3 Yamato AzusagawaMatsumoto-shi, Nagano 390-1701JPAir Water Inc.101880491TSB-01-EP12-8, 2-chome, Minami Semba Chuo-kuOsaka-shi Osaka 542-0081JPHering, Hartmut100002584Patentanwälte Berendt, Leyh & Hering Innere Wiener Strasse 2081667 MünchenDEALATBEBGCHCYCZDEDKEEESFIFRGBGRHRHUIEISITLILTLULVMCMKMTNLNOPLPTRORSSESISKSMTRJP201507286320150812jaWO201607212220160512201619