MONOLITHIC INTEGRATION TECHNIQUES FOR FABRICATING PHOTODETECTORS WITH TRANSISTORS ON SAME SUBSTRATE

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EP 3 224 866 B8

(12)	CORRECTED EUROPEAN PATENT SPECIFICATION
	Note: Bibliography reflects the latest situation

(15)	Correction information:
	Corrected version no 1 (W1 B1)

(48)	Corrigendum issued on:
	27.02.2019 Bulletin 2019/09

(45)	Mention of the grant of the patent:
	19.12.2018 Bulletin 2018/51

(21)	Application number: 15863156.4

(22)	Date of filing: 23.11.2015

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International Patent Classification (IPC):

H01L 27/146^(2006.01)
H01L 21/3205^(2006.01)
H01L 21/8234^(2006.01)
H01L 27/06^(2006.01)
H04N 5/369^(2011.01)

H01L 21/20^(2006.01)
H01L 21/768^(2006.01)
H01L 23/522^(2006.01)
H01L 31/10^(2006.01)

(86)	International application number:
	PCT/US2015/062198

(87)	International publication number:
	WO 2016/085880 (02.06.2016 Gazette 2016/22)

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MONOLITHIC INTEGRATION TECHNIQUES FOR FABRICATING PHOTODETECTORS WITH TRANSISTORS ON SAME SUBSTRATE

MONOLITHISCHE INTEGRATIONSVERFAHREN ZUR HERSTELLUNG VON FOTODETEKTOREN MIT TRANSISTOREN AUF DEMSELBEN SUBSTRAT

TECHNIQUES D'INTÉGRATION MONOLITHIQUE POUR FABRIQUER DES PHOTODÉTECTEURS PRÉSENTANT DES TRANSISTORS SUR LE MÊME SUBSTRAT

(84)	Designated Contracting States:
	AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

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Priority:

24.11.2014 US 201462083321 P
05.02.2015 US 201562112615 P
16.07.2015 US 201562193129 P
26.07.2015 US 201562197098 P

(43)	Date of publication of application:
	04.10.2017 Bulletin 2017/40

(60)	Divisional application:
	18204760.5

(73)	Proprietor: Artilux Inc.
	Zhubei City 302, Hsinchu County (TW)

(72)	Inventors:
	CHENG, Szu-Lin Zhubei City 302 (TW) CHEN, Shu-Lu Zhubei City 302 (TW)

(74)	Representative: Herre, Peter et al
	Dendorfer & Herrmann Patentanwälte Partnerschaft mbB Neuhauser Straße 47 80331 München 80331 München (DE)

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References cited: :

WO-A1-97/04493
WO-A1-2011/087633
JP-A- S5 812 481
JP-A- S61 187 267
JP-A- 2010 212 469
US-A1- 2006 110 844
US-A1- 2008 303 058
US-A1- 2010 059 802

WO-A1-2009/020433
WO-A2-2010/059419
JP-A- H01 239 967
JP-A- 2008 140 808
JP-A- 2013 201 347
US-A1- 2008 303 058
US-A1- 2009 101 909

Anonymous: "Semiconductor device fabrication - Wikipedia", , 19 November 2014 (2014-11-19), XP055399371, Retrieved from the Internet: URL:https://en.wikipedia.org/w/index.php?t itle=Semiconductor_device_fabrication&oldi d=634491283 [retrieved on 2017-08-17]

Note: Within nine months from the publication of the mention of the grant of the European patent, any person may give notice to the European Patent Office of opposition to the European patent granted. Notice of opposition shall be filed in a written reasoned statement. It shall not be deemed to have been filed until the opposition fee has been paid. (Art. 99(1) European Patent Convention).