<?xml version="1.0" encoding="UTF-8"?>
<!DOCTYPE ep-patent-document PUBLIC "-//EPO//EP PATENT DOCUMENT 1.5//EN" "ep-patent-document-v1-5.dtd">
<!-- This XML data has been generated under the supervision of the European Patent Office -->
<ep-patent-document id="EP15820282B8W1" file="EP15820282W1B8.xml" lang="fr" country="EP" doc-number="3238269" kind="B8" correction-code="W1" date-publ="20210120" status="c" dtd-version="ep-patent-document-v1-5">
<SDOBI lang="fr"><B000><eptags><B001EP>ATBECHDEDKESFRGBGRITLILUNLSEMCPTIESILTLVFIROMKCYALTRBGCZEEHUPLSK..HRIS..MTNORS..SM..................</B001EP><B003EP>*</B003EP><B005EP>J</B005EP><B007EP>BDM Ver 1.7.2 (20 November 2019) -  2999001/0</B007EP></eptags></B000><B100><B110>3238269</B110><B120><B121>FASCICULE DE BREVET EUROPEEN CORRIGE</B121></B120><B130>B8</B130><B132EP>B1</B132EP><B140><date>20210120</date></B140><B150><B151>W1</B151><B153>73</B153><B155><B1551>de</B1551><B1552>Bibliographie</B1552><B1551>en</B1551><B1552>Bibliography</B1552><B1551>fr</B1551><B1552>Bibliographie</B1552></B155></B150><B190>EP</B190></B100><B200><B210>15820282.0</B210><B220><date>20151215</date></B220><B240><B241><date>20170720</date></B241><B242><date>20181207</date></B242></B240><B250>fr</B250><B251EP>fr</B251EP><B260>fr</B260></B200><B300><B310>1463140</B310><B320><date>20141222</date></B320><B330><ctry>FR</ctry></B330></B300><B400><B405><date>20210120</date><bnum>202103</bnum></B405><B430><date>20171101</date><bnum>201744</bnum></B430><B450><date>20200812</date><bnum>202033</bnum></B450><B452EP><date>20200306</date></B452EP><B480><date>20210120</date><bnum>202103</bnum></B480></B400><B500><B510EP><classification-ipcr sequence="1"><text>H01L  29/778       20060101AFI20200107BHEP        </text></classification-ipcr><classification-ipcr sequence="2"><text>H01L  29/861       20060101ALI20200107BHEP        </text></classification-ipcr><classification-ipcr sequence="3"><text>H01L  29/06        20060101ALI20200107BHEP        </text></classification-ipcr><classification-ipcr sequence="4"><text>H01L  29/20        20060101ALI20200107BHEP        </text></classification-ipcr></B510EP><B540><B541>de</B541><B542>MODULATIONSVORRICHTUNG MIT EINER NANODIODE</B542><B541>en</B541><B542>MODULATION DEVICE COMPRISING A NANODIODE</B542><B541>fr</B541><B542>DISPOSITIF DE MODULATION COMPORTANT UNE NANO-DIODE</B542></B540><B560><B561><text>WO-A1-2014/134490</text></B561><B561><text>WO-A2-02/086973</text></B561><B561><text>WO-A2-2007/072405</text></B561><B562><text>SONG A M ET AL: "Unidirectional electron flow in a nanometer-scale semiconductor channel: A self-switching device", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS, 2 HUNTINGTON QUADRANGLE, MELVILLE, NY 11747, vol. 83, no. 9, 1 septembre 2003 (2003-09-01), pages 1881-1883, XP012035982, ISSN: 0003-6951, DOI: 10.1063/1.1606881</text></B562><B562><text>SANGARE PAUL ET AL: "Zero-bias GaN implanted Self-Switching Diode coupled with bow-tie antenna for THz applications", 2014 44TH EUROPEAN MICROWAVE CONFERENCE, EUROPEAN MICROWAVE ASSOCIATION, 6 octobre 2014 (2014-10-06), pages 806-809, XP032706806, DOI: 10.1109/EUMC.2014.6986557</text></B562><B562><text>MATEOS J ET AL: "Noise and Terahertz rectification in semiconductor diodes and transistors", NOISE AND FLUCTUATIONS (ICNF), 2011 21ST INTERNATIONAL CONFERENCE ON, IEEE, 12 juin 2011 (2011-06-12), pages 16-21, XP032038873, DOI: 10.1109/ICNF.2011.5994291 ISBN: 978-1-4577-0189-4</text></B562><B562><text>SÁNCHEZ-MARTÍN H ET AL: "Voltage controlled sub-THz detection with gated planar asymmetric nanochannels", APPLIED PHYSICS LETTERS, A I P PUBLISHING LLC, US, vol. 113, no. 4, 043504, 25 July 2018 (2018-07-25), pages 1-4, XP012230270, ISSN: 0003-6951, DOI: 10.1063/1.5041507 [retrieved on 2018-07-25]</text></B562></B560></B500><B700><B720><B721><snm>GAQUIERE, Christophe Pierre Paul</snm><adr><str>11 allée Talmotte</str><city>59650 Villeneuve d'Ascq</city><ctry>FR</ctry></adr></B721><B721><snm>DUCOURNAU, Guillaume</snm><adr><str>30 rue des Combattants</str><city>59310 Orchies</city><ctry>FR</ctry></adr></B721><B721><snm>FAUCHER, Marc</snm><adr><str>Appt 303 - Résidence du Lac
92 rue Henri Ghesquiere</str><city>59810 Lesquin</city><ctry>FR</ctry></adr></B721></B720><B730><B731><snm>Centre National de la Recherche Scientifique 
(C.N.R.S.)</snm><iid>101466277</iid><irf>CABGndmF1976/6</irf><adr><str>3, rue Michel-Ange</str><city>75016 Paris</city><ctry>FR</ctry></adr></B731><B731><snm>Université de Lille</snm><iid>101728741</iid><irf>CABGndmF1976/6</irf><adr><str>42, rue Paul Duez</str><city>59800 Lille</city><ctry>FR</ctry></adr></B731></B730><B740><B741><snm>Gevers &amp; Orès</snm><iid>101192305</iid><adr><str>Immeuble le Palatin 2 
3 Cours du Triangle 
CS 80165</str><city>92939 Paris La Défense Cedex</city><ctry>FR</ctry></adr></B741></B740></B700><B800><B840><ctry>AL</ctry><ctry>AT</ctry><ctry>BE</ctry><ctry>BG</ctry><ctry>CH</ctry><ctry>CY</ctry><ctry>CZ</ctry><ctry>DE</ctry><ctry>DK</ctry><ctry>EE</ctry><ctry>ES</ctry><ctry>FI</ctry><ctry>FR</ctry><ctry>GB</ctry><ctry>GR</ctry><ctry>HR</ctry><ctry>HU</ctry><ctry>IE</ctry><ctry>IS</ctry><ctry>IT</ctry><ctry>LI</ctry><ctry>LT</ctry><ctry>LU</ctry><ctry>LV</ctry><ctry>MC</ctry><ctry>MK</ctry><ctry>MT</ctry><ctry>NL</ctry><ctry>NO</ctry><ctry>PL</ctry><ctry>PT</ctry><ctry>RO</ctry><ctry>RS</ctry><ctry>SE</ctry><ctry>SI</ctry><ctry>SK</ctry><ctry>SM</ctry><ctry>TR</ctry></B840><B860><B861><dnum><anum>IB2015059623</anum></dnum><date>20151215</date></B861><B862>fr</B862></B860><B870><B871><dnum><pnum>WO2016103111</pnum></dnum><date>20160630</date><bnum>201626</bnum></B871></B870></B800></SDOBI>
</ep-patent-document>
