(19)
(11) EP 3 247 824 A1

(12)

(43) Date of publication:
29.11.2017 Bulletin 2017/48

(21) Application number: 16703412.3

(22) Date of filing: 22.01.2016
(51) International Patent Classification (IPC): 
C30B 29/40(2006.01)
C30B 7/10(2006.01)
(86) International application number:
PCT/US2016/014522
(87) International publication number:
WO 2016/118862 (28.07.2016 Gazette 2016/30)
(84) Designated Contracting States:
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated Extension States:
BA ME
Designated Validation States:
MA MD

(30) Priority: 22.01.2015 US 201562106709 P

(71) Applicants:
  • SixPoint Materials, Inc.
    Buellton, CA 93427 (US)
  • Seoul Semiconductor Co., Ltd.
    Ansan-si, Gyeonggi-do 15429 (KR)

(72) Inventors:
  • HASHIMOTO, Tadao
    Santa Barbara, California 93111 (US)
  • LETTS, Edward
    Buellton, California 93427 (US)
  • KEY, Daryl
    La Canada, California 91011 (US)

(74) Representative: J A Kemp 
14 South Square Gray's Inn
London WC1R 5JJ
London WC1R 5JJ (GB)

   


(54) SEED SELECTION AND GROWTH METHODS FOR REDUCED-CRACK GROUP III NITRIDE BULK CRYSTALS