(19)
(11) EP 3 298 390 B8

(12) CORRECTED EUROPEAN PATENT SPECIFICATION
Note: Bibliography reflects the latest situation

(15) Correction information:
Corrected version no 1 (W1 B1)

(48) Corrigendum issued on:
16.02.2022 Bulletin 2022/07

(45) Mention of the grant of the patent:
07.07.2021 Bulletin 2021/27

(21) Application number: 16890862.2

(22) Date of filing: 28.04.2016
(51) International Patent Classification (IPC): 
G01N 21/64(2006.01)
G06T 7/00(2017.01)
H04N 5/367(2011.01)
G01N 21/95(2006.01)
H04N 5/374(2011.01)
(52) Cooperative Patent Classification (CPC):
G01N 2021/646; G01N 21/6456; G01N 21/9505; G01N 21/6489; G01N 21/9501
(86) International application number:
PCT/US2016/029821
(87) International publication number:
WO 2017/142569 (24.08.2017 Gazette 2017/34)

(54)

MICRO PHOTOLUMINESCENCE IMAGING WITH OPTICAL FILTERING

MIKROPHOTOLUMINESZENZBILDGEBUNG MIT OPTISCHER FILTRIERUNG

IMAGERIE PAR MICROPHOTOLUMINESCENCE AVEC FILTRAGE OPTIQUE


(84) Designated Contracting States:
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

(30) Priority: 04.05.2015 US 201514703692
09.10.2015 US 201514879522

(43) Date of publication of application:
28.03.2018 Bulletin 2018/13

(60) Divisional application:
21183872.7

(73) Proprietor: SEMILAB Semiconductor Physics Laboratory Co., Ltd.
Budapest 1117 (HU)

(72) Inventors:
  • KISS, Zoltan Tamas
    1115 Budapest (HU)
  • DUDAS, Laszlo
    2119 Pécel (HU)
  • KOVACS, Zsolt
    1048 Budapest (HU)
  • LAJTOS, Imre
    1012 Budapest (HU)
  • NADUDVARI, Gyorgy
    2084 Pilisszentivan (HU)
  • LAURENT, Nicolas
    Singapore 557320 (SG)
  • JASTRZEBSKI, Lubomir L.
    Clearwater, Florida 33767 (US)

(74) Representative: Fish & Richardson P.C. 
Highlight Business Towers Mies-van-der-Rohe-Straße 8
80807 München
80807 München (DE)


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  • JOHNSTON STEVE ET AL: "Correlating Multicrystalline Silicon Defect Types Using Photoluminescence, Defect-band Emission, and Lock-in Thermography Imaging Techniques", IEEE JOURNAL OF PHOTOVOLTAICS, I E E E, US, vol. 4, no. 1, 1 January 2014 (2014-01-01) , pages 348-354, XP011534384, ISSN: 2156-3381, DOI: 10.1109/JPHOTOV.2013.2283575 [retrieved on 2013-12-16]
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  • TRUPKE T ET AL: "Progress with luminescence imaging for the characterisation of silicon wafers and solar cells", PROCEEDINGS OF THE EUROPEAN PHOTOVOLTAIC SOLAR ENERGY CONFERENCE, XX, XX, no. 22TH, 3 September 2007 (2007-09-03), pages 22-31, XP002675848,
  • Jan Linnros ET AL: "CARRIER LIFETIME: FREE CARRIER ABSORPTION, PHOTOCONDUCTIVITY, AND PHOTOLUMINESCENCE INTRODUCTION", Characterization of Materials, 15 October 2002 (2002-10-15), pages 658-692, XP055139470, DOI: 10.1002/0471266965.com037 Retrieved from the Internet: URL:http://onlinelibrary.wiley.com/store/1 0.1002/0471266965.com037.pub2/asset/com037 .pdf?v=1&t=hzwrpklq&s=db630afdcd19017f6f2f f0d0d9e62dd9906bb99d [retrieved on 2014-09-10]
   
Note: Within nine months from the publication of the mention of the grant of the European patent, any person may give notice to the European Patent Office of opposition to the European patent granted. Notice of opposition shall be filed in a written reasoned statement. It shall not be deemed to have been filed until the opposition fee has been paid. (Art. 99(1) European Patent Convention).