(19)
(11) EP 3 311 420 A1

(12)

(43) Date of publication:
25.04.2018 Bulletin 2018/17

(21) Application number: 16738921.2

(22) Date of filing: 21.06.2016
(51) International Patent Classification (IPC): 
H01L 31/105(2006.01)
H01L 31/0304(2006.01)
 H01L 31/107(2006.01)
H01L 31/18(2006.01)
(86) International application number:
PCT/US2016/038567
(87) International publication number:
WO 2016/209836 (29.12.2016 Gazette 2016/52)
(84) Designated Contracting States:
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated Extension States:
BA ME
Designated Validation States:
MA MD

(30) Priority: 22.06.2015 US 201562183060 P

(71) Applicant: IQE Plc.
St Mellons, Cardiff CF3 3LW (GB)

(72) Inventors:
  • YANKA, Robert
    Greensboro, NC 27409 (US)
  • CHUNG, Seokjae
    Greensboro, NC 27409 (US)
  • NUNNA, Kalyan
    Greensboro, NC 27409 (US)
  • PELZEL, Rodney
    Bethlehem, PA 18049 (US)
  • WILLIAMS, Howard
    St. Mellons, Cardiff CF3 0LW (GB)

(74) Representative: Vossius & Partner Patentanwälte Rechtsanwälte mbB 
Siebertstrasse 3
81675 München
81675 München (DE)

   


(54) OPTOELECTRONIC DETECTORS HAVING A DILUTE NITRIDE LAYER ON A SUBSTRATE WITH A LATTICE PARAMETER NEARLY MATCHING GAAS