III-NITRIDE STRUCTURES GROWN SILICON SUBSTRATES WITH INCREASED COMPRESSIVE STRESS - Patent 3387668

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EP 3 387 668 A1

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(43)	Date of publication:
	17.10.2018 Bulletin 2018/42

(21)	Application number: 16822298.2

(22)	Date of filing: 05.12.2016

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International Patent Classification (IPC):

H01L 21/02^(2006.01)

(86)	International application number:
	PCT/US2016/065019

(87)	International publication number:
	WO 2017/100141 (15.06.2017 Gazette 2017/24)

(84)	Designated Contracting States:
	AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
	Designated Extension States:
	BA ME
	Designated Validation States:
	MA MD

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Priority:

10.12.2015 US 201562265927 P

(71)	Applicant: IQE Plc.
	St. Mellons, Cardiff CF3 0LW (GB)

(72)	Inventors:
	LABOUTIN, Oleg Taunson, MA 02780 (US) KAO, Chen-Kai Taunson, MA 02780 (US) LO, Chien-Fong Taunson, MA 02780 (US) MARCHAND, Hugues Taunson, MA 02780 (US) PELZEL, Rodney Bethlehem, PA 18049 (US)

(74)	Representative: Vossius & Partner Patentanwälte Rechtsanwälte mbB
	Siebertstrasse 3 81675 München 81675 München (DE)

(54)	III-NITRIDE STRUCTURES GROWN SILICON SUBSTRATES WITH INCREASED COMPRESSIVE STRESS