PROJECTION LENS

Description

Technical Field

[0001] The present invention relates to a projection lens.

Background Art

[0002] In recent years, imaging performance required for a projection lens has been increased as the number of pixels of a projected image increases, and the number of constituent lenses tends to increase. Regarding this tendency, in a case of a conventional projection lens including 15 lenses each having four antireflective films formed on a surface of a lens substrate having, for example, a refractive index of 1.52, a light reflection loss of about 5% in the entire projection lens is generated on average in a visible light wavelength range. Furthermore, in a case of a projection lens including 30 lenses, there is a concern that a light reflection loss of about 10% is generated, and brightness of an image projected on a projection plane is largely reduced. Therefore, in order to suppress a decrease in the transmittance of the whole system of a projection lens in response to an increase in the number of constituent lenses, an antireflective film with a lower reflectance and a smaller loss of light is required for a lens substrate. An example of conventional technology related to solving this problem is disclosed in JP 2002-267803 A.

[0003] In an antireflective film described in JP 2002-267803 A, in order from a substrate side, a first layer is formed of a material having a refractive index lower than that of the substrate, second, fourth, sixth, and eighth layers are formed of a high refractive index material, third, fifth, seventh, and ninth layers are formed of a low refractive index material, and the optical film thickness of each of the layers is individually set to a predetermined value related to a design wavelength. This prevents reflection in a wide wavelength band from an ultraviolet region to an infrared region.

[0004] Other examples of the prior art can be seen in documents JP 2015 022187 A, JP 2014 164120 A, JP 2007 094150 A, EP 1 808 714 A1 and EP 2 708 922 A2.

Summary of Invention

Technical Problem

[0005] However, according to the conventional technology described in JP 2002-267803 A, even in an embodiment having the lowest maximum reflectance in a visible light wavelength range (for example, 420 nm to 690 nm), the maximum reflectance is about 0.5%, which is relatively high. As a result, it is a problem that a projection lens is insufficient for application to a recent increase in the number of pixels of an image.

[0006] The present invention has been achieved in view of the above points. An object of the present invention is to provide a projection lens capable of effectively suppressing a decrease in the transmittance of the whole system and capable of coping with an increase in the number of constituent lenses.

Solution to Problem

[0007] In order to solve the above problems, the present invention provides a projection lens for projecting an image onto a projection plane, including: a lens substrate; and an antireflective film constituted by at least eight layers, formed on a surface of the lens substrate, characterized in that, in the antireflective film, in order from an air side, a first layer is formed of MgF₂, each of a second layer, a fourth layer, a sixth layer, and an eighth layer has a refractive index of 2.0 to 2.3, each of a third layer, a fifth layer, and a seventh layer is formed of SiO₂, and quarter wave optical thicknesses Q₁ to Q₈ for the first layer to the eighth layer with respect to a refractive index n_s of the lens substrate at a design main wavelength of λ₀ = 550 nm satisfy the following formulas (1) to (8).

[0008] In addition, the projection lens having the above configuration is characterized in that each of the second layer, the fourth layer, the sixth layer, and the eighth layer is formed of any one of Ta₂O₅, LaTiO₃, a mixture of Ti₂O₃ and ZrO₂, and a mixture of ZrTiO₄ and ZrO₂.

[0009] In addition, the projection lens having the above configuration is characterized in that the antireflective film has a maximum reflectance of 0.2% or less in a wavelength range of 430 nm to 670 nm.

[0010] In addition, the projection lens having the above configuration is characterized in that three or more types of glass materials among glass materials classified into five types satisfying the following formulas (9) to (13) regarding a refractive index n_s are used as the lens substrate.

Advantageous Effects of Invention

[0011] According to the present invention, it is possible to form an antireflective film with a low reflectance and a small loss of light corresponding to lens substrates having various refractive indices. That is, it is possible to form an antireflective film using a high refractive index material which has been relatively difficult to use conventionally, and it is possible to expand the degree of freedom of the configuration of a projection lens. As a result, it is possible to effectively suppress a decrease in the transmittance of the whole system of a projection lens, and it is possible to flexibly cope with an increase in the number of constituent lenses.

Brief Description of Drawings

[0012] 

Fig. 1 is an optical configuration diagram of a projection lens according to an embodiment of the present invention.

Fig. 2 is a layer configuration diagram of an antireflective film of a single lens of the projection lens according to the embodiment of the present invention.

Fig. 3 is a graph illustrating spectral reflectance characteristics of an antireflective film of a lens substrate in Comparative Example with respect to the embodiment of the present invention.

Fig. 4 is a graph illustrating spectral reflectance characteristics of an antireflective film of a lens substrate in Example 1 of the projection lens according to the embodiment of the present invention.

Fig. 5 is a graph illustrating spectral reflectance characteristics of an antireflective film of a lens substrate in Example 2 of the projection lens according to the embodiment of the present invention.

Fig. 6 is a graph illustrating spectral reflectance characteristics of an antireflective film of a lens substrate in Example 3 of the projection lens according to the embodiment of the present invention.

Fig. 7 is a graph illustrating spectral reflectance characteristics of an antireflective film of a lens substrate in Example 4 of the projection lens according to the embodiment of the present invention.

Fig. 8 is a graph illustrating spectral reflectance characteristics of an antireflective film of a lens substrate in Example 5 of the projection lens according to the embodiment of the present invention.

Fig. 9 is a graph illustrating spectral reflectance characteristics of an antireflective film of a lens substrate in Example 6 of the projection lens according to the embodiment of the present invention.

Description of Embodiments

[0013] Hereinafter, an example of an embodiment of the present invention will be described with reference to the drawings.

[0014] First, the configuration of a projection lens according to the embodiment of the present invention will be described with reference to Fig. 1. Fig. 1 is an optical configuration diagram of a projection lens, illustrating the lens cross-sectional shape, the lens arrangement, and the like of a projection lens LN with optical cross sections at each of a wide-angle end (W) and a telephoto end (T). The right side of Fig. 1 is a reduction side of the projection lens LN, and the left side of Fig. 1 is an enlargement side of the projection lens LN. Note that a prism PR (for example, a total internal reflection (TIR) prism or a color separation/synthesis prism) and a cover glass CG of an image display element are illustrated on the reduction side of the projection lens LN.

[0015] The projection lens LN is constituted by, for example, 30 lens components as a whole as illustrated in Fig. 1, and includes a first optical system LN1 and a second optical system LN2 in order from the enlargement side with an intermediate image plane IM1 interposed therebetween. The second optical system LN2 forms an intermediate image of an image displayed on an image display surface IM2 of an image display element on the intermediate image plane IM1. The first optical system LN1 enlarges and projects the intermediate image. Note that an aperture stop ST is located near the center of the second optical system LN2 in an optical axis direction. A relay lens is used in order to obtain both a wide field angle and excellent projection performance. Therefore, the number of constituent lenses is large.

[0016] Next, the detailed configuration of a single lens used for the projection lens LN will be described with reference to Fig. 2. Fig. 2 is a layer configuration diagram of an antireflective film of a single lens.

[0017] A lens 1 used for the projection lens LN includes a lens substrate 10 and an antireflective film 20 illustrated in Fig. 2. The lens substrate 10 is constituted by a transparent substrate formed of, for example, glass (glass material). On a surface of the lens substrate 10, the antireflective film 20 constituted by eight layers is formed.

[0018] The antireflective film 20 includes, in order from an air side, a first layer 21, a second layer 22, a third layer 23, a fourth layer 24, a fifth layer 25, a sixth layer 26, a seventh layer 27, and an eighth layer 28. The first layer 21 is formed of MgF₂. Each of the second layer 22, the fourth layer 24, the sixth layer 26, and the eighth layer 28 is formed of a so-called high refractive index material having a refractive index of 2.0 to 2.3. Each of the third layer 23, the fifth layer 25, and the seventh layer 27 is formed of SiO₂.

[0019] The quarter wave optical thicknesses (QWOT) Q₁ to Q₈ of the first layer 21 to the eighth layer 28 with respect to a refractive index n_s of the lens substrate 10 at a design main wavelength of λ₀ = 550 nm satisfy the following formulas (1) to (8).

[0020] Each of the layers of the antireflective film 20 is formed by a vacuum deposition method under heating, for example, at 300°C. Particularly, the second layer 22 to the eighth layer 28 are formed by a vacuum deposition method using ion assist. Ion-assisted vapor deposition is desirably used in order to reduce a change in film density of the antireflective film 20 and the roughness of a film surface due to variation of the degree of vacuum and the like in the vacuum deposition method. This makes it possible to suppress occurrence of color unevenness and deterioration of characteristic reproducibility caused by a change in film density, that is, a change in refractive index of a film. When ion-assisted vapor deposition is used for forming the antireflective film 20, it is possible to use a high refractive index material which has been relatively difficult to use conventionally for the layers constituting the antireflective film 20.

[0021] According to the above configuration, the antireflective film 20 has a maximum reflectance of 0.2% or less in a wavelength range of 430 nm to 670 nm.

[0022] Note that each of the second layer 22, the fourth layer 24, the sixth layer 26, and the eighth layer 28 in the antireflective film 20 is preferably formed of any one of Ta₂O₅, LaTiO₃, a mixture of Ti₂O₃ and ZrO₂, and a mixture of ZrTiO₄ and ZrO₂.

[0023] In each of the 30 lenses of the projection lens LN, three or more types of glass materials having different refractive indexes n_s are used as the lens substrate 10. Specifically, three or more types of glass materials among glass materials classified into five types satisfying the following formulas (9) to (13) regarding a refractive index n_s are used as the lens substrate 10.

Examples

[0024] Subsequently, regarding the present embodiment, evaluation of light reflectance of a lens substrate and an antireflective film in each of Examples and a lens substrate and an antireflective film in Comparative Example will be described with reference to Figs. 3 to 9. Fig. 3 is a graph illustrating spectral reflectance characteristics of an antireflective film of a lens substrate in Comparative Example. Figs. 4 to 9 are graphs illustrating spectral reflectance characteristics of antireflective films of lens substrates in Examples 1 to 6. Note that the vertical axis indicates reflectance and the horizontal axis indicates wavelength of light in Figs. 3 to 9.

[0025] Conditions of a glass substrate and an antireflective film in Comparative Example are illustrated in Table 1. In Comparative Example, a general antireflective film constituted by four layers was formed on a surface of a glass lens substrate having a refractive index n_s = 1.52 at a design main wavelength of λ₀ = 550 nm. Each layer of the antireflective film was formed by a vacuum deposition method under heating at 300°C.

[Table 1]

Comparative Example
Design main wavelength λ0 = 550 [nm]
Material for layer		QWOT
First layer	MgF2	0.93
Second layer	LaTiO3	1.86
Third layer	AL2O3	1.09
Fourth layer	MgF2	0.41
Lens substrate Refractive index ns: 1.52

[0026] According to Fig. 3 illustrating the spectral reflectance characteristics of the lens substrate and the antireflective film in Comparative Example, a maximum reflectance in a visible light wavelength range of 430 nm to 670 nm was 0.26%. It is found that Comparative Example has a relatively high maximum reflectance.

[0027] Conditions of the glass substrate 10 and the antireflective film 20 in Example 1 are illustrated in Table 2. In Example 1, the antireflective film 20 constituted by eight layers was formed on a surface of the glass lens substrate 10 having a refractive index n_s = 1.52 at a design main wavelength of λ₀ = 550 nm. The quarter wave optical thicknesses (QWOT) Q₁ to Q₈ of the first layer 21 to the eighth layer 28 with respect to a refractive index n_s = 1.52 of the lens substrate 10 at a design main wavelength of λ₀ = 550 nm satisfy the following formulas (1) to (8). Each layer of the antireflective film 20 was formed by a vacuum deposition method under heating at 300°C. Particularly, the second layer 22 to the eighth layer 28 were formed by a vacuum deposition method using ion assist.

[Table 2]

Example 1
Design main wavelength λ0 = 550 [nm]
Material for layer		QWOT
First layer	MgF2	Q1	0.94
Second layer	Ta2O5	Q2	1.89
Third layer	SiO2	Q3	2.01
Fourth layer	Ta2O5	Q4	0.67
Fifth layer	SiO2	Q5	0.19
Sixth layer	Ta2O5	Q6	0.85
Seventh layer	SiO2	Q7	0.43
Eighth layer	Ta2O5	Q8	0.22
Lens substrate Refractive index ns: 1.52

[0028] According to Fig. 4 illustrating the spectral reflectance characteristics of the lens substrate 10 and the antireflective film 20 in Example 1, a maximum reflectance in a visible light wavelength range of 430 nm to 670 nm was 0.04%. It is found that the maximum reflectance is suppressed to a very low value in Example 1 as compared with Comparative Example.

[0029] Conditions of the glass substrate 10 and the antireflective film 20 in Example 2 are illustrated in Table 3. In Example 2, the antireflective film 20 constituted by eight layers was formed on a surface of the glass lens substrate 10 having a refractive index n_s = 1.62 at a design main wavelength of λ₀ = 550 nm. The quarter wave optical thicknesses (QWOT) Q₁ to Q₈ of the first layer 21 to the eighth layer 28 with respect to a refractive index n_s = 1.62 of the lens substrate 10 at a design main wavelength of λ₀ = 550 nm satisfy the following formulas (1) to (8). Each layer of the antireflective film 20 was formed by a vacuum deposition method under heating at 300°C. Particularly, the second layer 22 to the eighth layer 28 were formed by a vacuum deposition method using ion assist.

[Table 3]

Example 2
Design main wavelength λ0 = 550 [nm]
Material for layer		QWOT
First layer	MgF2	Q1	0.95
Second layer	Ta2O5	Q2	1.89
Third layer	SiO2	Q3	1.99
Fourth layer	Ta2O5	Q4	0.66
Fifth layer	SiO2	Q5	0.13
Sixth layer	Ta2O5	Q6	1.07
Seventh layer	SiO2	Q7	0.33
Eighth layer	Ta2O5	Q8	0.26
Lens substrate Refractive index ns: 1.62

[0030] According to Fig. 5 illustrating the spectral reflectance characteristics of the lens substrate 10 and the antireflective film 20 in Example 2, a maximum reflectance in a visible light wavelength range of 430 nm to 670 nm was 0.04%. It is found that the maximum reflectance is suppressed to a very low value in Example 2 as compared with Comparative Example.

[0031] Conditions of the glass substrate 10 and the antireflective film 20 in Example 3 are illustrated in Table 4. In Example 3, the antireflective film 20 constituted by eight layers was formed on a surface of the glass lens substrate 10 having a refractive index n_s = 1.72 at a design main wavelength of λ₀ = 550 nm. The quarter wave optical thicknesses (QWOT) Q₁ to Q₈ of the first layer 21 to the eighth layer 28 with respect to a refractive index n_s = 1.72 of the lens substrate 10 at a design main wavelength of λ₀ = 550 nm satisfy the following formulas (1) to (8). Each layer of the antireflective film 20 was formed by a vacuum deposition method under heating at 300°C. Particularly, the second layer 22 to the eighth layer 28 were formed by a vacuum deposition method using ion assist.

[Table 4]

Example 3
Design main wavelength λ0 = 550 [nm]
Material for layer		QWOT
First layer	MgF2	Q1	0.95
Second layer	Ta2O5	Q2	1.90
Third layer	SiO2	Q3	1.99
Fourth layer	Ta2O5	Q4	0.63
Fifth layer	SiO2	Q5	0.13
Sixth layer	Ta2O5	Q6	1.14
Seventh layer	SiO2	Q7	0.27
Eighth layer	Ta2O5	Q8	0.29
Lens substrate Refractive index ns: 1.72

[0032] According to Fig. 6 illustrating the spectral reflectance characteristics of the lens substrate 10 and the antireflective film 20 in Example 3, a maximum reflectance in a visible light wavelength range of 430 nm to 670 nm was 0.04%. It is found that the maximum reflectance is suppressed to a very low value in Example 3 as compared with Comparative Example.

[0033] Conditions of the glass substrate 10 and the antireflective film 20 in Example 4 are illustrated in Table 5. In Example 4, the antireflective film 20 constituted by eight layers was formed on a surface of the glass lens substrate 10 having a refractive index n_s = 1.82 at a design main wavelength of λ₀ = 550 nm. The quarter wave optical thicknesses (QWOT) Q₁ to Q₈ of the first layer 21 to the eighth layer 28 with respect to a refractive index n_s = 1.82 of the lens substrate 10 at a design main wavelength of λ₀ = 550 nm satisfy the following formulas (1) to (8). Each layer of the antireflective film 20 was formed by a vacuum deposition method under heating at 300°C. Particularly, the second layer 22 to the eighth layer 28 were formed by a vacuum deposition method using ion assist.

[Table 5]

Example 4
Design main wavelength λ0 = 550 [nm]
Material for layer		QWOT
First layer	MgF2	Q1	0.95
Second layer	Ta2O5	Q2	1.90
Third layer	SiO2	Q3	1.99
Fourth layer	Ta2O5	Q4	0.60
Fifth layer	SiO2	Q5	0.13
Sixth layer	Ta2O5	Q6	1.23
Seventh layer	SiO2	Q7	0.22
Eighth layer	Ta2O5	Q8	0.32
Lens substrate Refractive index ns: 1.82

[0034] According to Fig. 7 illustrating the spectral reflectance characteristics of the lens substrate 10 and the antireflective film 20 in Example 4, a maximum reflectance in a visible light wavelength range of 430 nm to 670 nm was 0.05%. It is found that the maximum reflectance is suppressed to a very low value in Example 4 as compared with Comparative Example.

[0035] Conditions of the glass substrate 10 and the antireflective film 20 in Example 5 are illustrated in Table 6. In Example 5, the antireflective film 20 constituted by eight layers was formed on a surface of the glass lens substrate 10 having a refractive index n_s = 1.92 at a design main wavelength of λ₀ = 550 nm. The quarter wave optical thicknesses (QWOT) Q₁ to Q₈ of the first layer 21 to the eighth layer 28 with respect to a refractive index n_s = 1.92 of the lens substrate 10 at a design main wavelength of λ₀ = 550 nm satisfy the following formulas (1) to (8). Each layer of the antireflective film 20 was formed by a vacuum deposition method under heating at 300°C. Particularly, the second layer 22 to the eighth layer 28 were formed by a vacuum deposition method using ion assist.

[Table 6]

Example 5
Design main wavelength λ0 = 550 [nm]
Material for layer		QWOT
First layer	MgF2	Q1	0.95
Second layer	Ta2O5	Q2	1.90
Third layer	SiO2	Q3	1.99
Fourth layer	Ta2O5	Q4	0.57
Fifth layer	SiO2	Q5	0.13
Sixth layer	Ta2O5	Q6	1.32
Seventh layer	SiO2	Q7	0.17
Eighth layer	Ta2O5	Q8	0.34
Lens substrate Refractive index ns: 1.92

[0036] According to Fig. 8 illustrating the spectral reflectance characteristics of the lens substrate 10 and the antireflective film 20 in Example 5, a maximum reflectance in a visible light wavelength range of 430 nm to 670 nm was 0.06%. It is found that the maximum reflectance is suppressed to a very low value in Example 5 as compared with Comparative Example.

[0037] Conditions of the glass substrate 10 and the antireflective film 20 in Example 6 are illustrated in Table 7. In Example 6, the antireflective film 20 constituted by nine layers was formed on a surface of the glass lens substrate 10 having a refractive index n_s = 1.62 at a design main wavelength of λ₀ = 550 nm. The quarter wave optical thicknesses (QWOT) Q₁ to Q₈ of the first layer 21 to the eighth layer 28 with respect to a refractive index n_s = 1.62 of the lens substrate 10 at a design main wavelength of λ₀ = 550 nm satisfy the following formulas (1) to (8). Each layer of the antireflective film 20 was formed by a vacuum deposition method under heating at 300°C. Particularly, the second layer 22 to the eighth layer 28 were formed by a vacuum deposition method using ion assist.

[Table 7]

Example 6
Design main wavelength λ0 = 550 [nm]
Material for layer		QWOT
First layer	MgF2	Q1	0.94
Second layer	Ta2O5	Q2	1.89
Third layer	SiO2	Q3	1.98
Fourth layer	Ta2O5	Q4	0.67
Fifth layer	SiO2	Q5	0.13
Sixth layer	Ta2O5	Q6	1.07
Seventh layer	SiO2	Q7	0.33
Eighth layer	Ta2O5	Q8	0.26
Ninth layer	Al2O3	Q9	0.14
Lens substrate Refractive index ns: 1.62

[0038] According to Fig. 9 illustrating the spectral reflectance characteristics of the lens substrate 10 and the antireflective film 20 in Example 6, a maximum reflectance in a visible light wavelength range of 430 nm to 670 nm was 0.04%. It is found that the maximum reflectance is suppressed to a very low value in Example 6 as compared with Comparative Example.

[0039] In this way, according to the configuration of the embodiment, it is possible to form the antireflective film 20 with a low reflectance and a small loss of light corresponding to the lens substrates 10 having various refractive indices. That is, it is possible to form the antireflective film 20 using a high refractive index material which has been relatively difficult to use conventionally, and it is possible to expand the degree of freedom of the configuration of the projection lens LN. As a result, it is possible to effectively suppress a decrease in the transmittance of the whole system of the projection lens LN, and it is possible to flexibly cope with an increase in the number of constituent lenses.

[0040] Furthermore, in the antireflective film 20, each of the second layer 22, the fourth layer 24, the sixth layer 26, and the eighth layer 28 is formed of any one of Ta₂O₅, LaTiO₃, a mixture of Ti₂O₃ and ZrO₂, and a mixture of ZrTiO₄ and ZrO₂. Therefore, it is possible to form the antireflective film 20 with a small loss of light by a vacuum deposition method under a relatively high temperature environment of, for example, 300°C. There is a risk that practical strength may be lowered in a case where MgF₂ used in the first layer 21 is formed in a low temperature environment. Therefore, according to the configuration of the present embodiment, it is possible to increase the strength of the first layer 21.

[0041] The antireflective film 20 desirably has a maximum reflectance of 0.2% or less in a wavelength range of 430 nm to 670 nm. This makes it possible to obtain the antireflective film 20 sufficient for application to a recent increase in the number of pixels of an image in the projection lens LN.

[0042] In addition, three or more types of glass materials among glass materials classified into five types satisfying the above formulas (9) to (13) regarding a refractive index n_s are used as the lens substrate 10. Therefore, even with the projection lens LN obtained by combining the lens substrates 10 formed of various glass materials for thirty lenses, it is possible to form the antireflective film 20 with a low reflectance and a small loss of light. This makes it possible to further widen the degree of freedom of the configuration of the projection lens LN.

[0043] The embodiment of the present invention has been described above. However, the scope of the present invention is not limited to the embodiment, and the present invention can be carried out by making various modifications to the embodiment without departing from the gist of the invention.

Industrial Applicability

[0044] The present invention can be used in a projection lens.

Reference Signs List

[0045] 

1

Glass

10

Glass substrate

20

Antireflective film

21

First layer

22

Second layer

23

Third layer

24

Fourth layer

25

Fifth layer

26

Sixth layer

27

Seventh layer

28

Eighth layer

LN

Projection lens

Claims

1. A projection lens (LN) for projecting an image onto a projection plane, comprising:

a lens substrate (10); and

an antireflective film (20) constituted by at least eight layers, formed on a surface of the lens substrate (10), characterized in that

in the antireflective film (20), in order from an air side, a first layer (21) is formed of MgF₂, each of a second layer (22), a fourth layer (24), a sixth layer (26), and an eighth layer (28) has a refractive index of 2.0 to 2.3, each of a third layer (23), a fifth layer (25), and a seventh layer (27) is formed of SiO₂, and quarter wave optical thicknesses Q₁ to Q₈ for the first layer (21) to the eighth layer (28) with respect to a refractive index n_s of the lens substrate (10) at a design main wavelength of λ₀ = 550 nm satisfy the following formulas (1) to (8).

2. The projection lens (LN) according to claim 1, wherein each of the second layer (22), the fourth layer (24), the sixth layer (26), and the eighth layer (28) is formed of any one of Ta₂O₅, LaTiO₃, a mixture of Ti₂O₃ and ZrO₂, and a mixture of ZrTiO₄ and ZrO₂.

3. The projection lens (LN) according to claim 1 or 2, wherein the antireflective film (20) has a maximum reflectance of 0.2% or less in a wavelength range of 430 nm to 670 nm.

4. The projection lens (LN) according to any one of claims 1 to 3, wherein three or more types of glass materials among glass materials classified into five types satisfying the following formulas (9) to (13) regarding a refractive index n_s are used as the lens substrate (10).

Ansprüche

1. Projektionslinse (LN) zum Projizieren eines Bildes auf eine Projektionsebene, umfassend:

ein Linsensubstrat (10); und

einen Antireflexfilm (20), der aus mindestens acht Schichten besteht, die auf einer Fläche des Linsensubstrats (10) gebildet sind, dadurch gekennzeichnet, dass

in dem Antireflexfilm (20), in Reihenfolge von einer Luftseite her, eine erste Schicht (21) aus MgF₂ gebildet ist, jeweils eine zweite Schicht (22), eine vierte Schicht (24), eine sechste Schicht (26) und eine achte Schicht (28) einen Brechungsindex von 2,0 bis 2,3 aufweist, jeweils eine dritte Schicht (23), eine fünfte Schicht (25) und eine siebte Schicht (27) aus SiO₂ gebildet ist, und optische Viertelwellendicken Q₁ bis Q₈ für die erste Schicht (21) zu der achten Schicht (28) relativ zu einem Brechungswinkel n_s des Linsensubstrats (10) bei einer Entwurfshauptwellenlänge von λ₀ > = 550 nm die folgenden Formeln (1) bis (8) erfüllen.

2. Projektionslinse (LN) nach Anspruch 1, wobei jeweils die zweite Schicht (22), die vierte Schicht (24), die sechste Schicht (26) und die achte Schicht (28) aus einem beliebigen von Ta₂O₅, LaTi0₃, einem Gemisch von Ti₂0₃ und Zr0₂, und einem Gemisch von ZrTiO₄ und Zr0₂ gebildet ist.

3. Projektionslinse (LN) nach Anspruch 1 oder 2, wobei der Antireflexfilm (20) ein maximales Reflexionsvermögen von 0,2 % oder weniger in einem Wellenlängenbereich von 430 nm bis 670 nm aufweist.

4. Projektionslinse (LN) nach einem der Ansprüche 1 bis 3, wobei drei oder mehr Arten von Glasmaterialien unter Glasmaterialien, die in fünf Typen klassifiziert sind, die die folgenden Formeln (9) bis (13) in Hinblick auf einen Brechungsindex n_s erfüllen, als das Linsensubstrat (10) verwendet werden.

Revendications

1. Lentille de projection (LN) pour projeter une image sur un plan de projection, comprenant :

un substrat de lentille (10) ; et

un film antireflet (20) composé d'au moins huit couches, formé sur une surface du substrat de lentille (10), caractérisée en ce que

dans le film antireflet (20), dans l'ordre depuis un côté d'air, une première couche (21) est formée de MgF₂, chacune d'une deuxième couche (22), d'une quatrième couche (24), d'une sixième couche (26), et d'une huitième couche (28) présente un indice de réfraction de 2,0 à 2,3, chacune d'une troisième couche (23), d'une cinquième couche (25), et d'une septième couche (27) est constituée de SiO₂, et des épaisseurs optiques quart d'onde Q₁ à Q₈ pour la première couche (21) à la huitième couche (28) par rapport à un indice de réfraction n_s du substrat de lentille (10) à une longueur d'onde principale de conception de λ₀ = 550 nm satisfait les formules (1) à (8) suivantes.

2. Lentille de projection (LN) selon la revendication 1, dans laquelle chacune de la deuxième couche (22), de la quatrième couche (24), de la sixième couche (26), et de la huitième couche (28) est formée de l'un quelconque de Ta₂O₅, de LaTiO₃, d'un mélange de Ti₂O₃ et de ZrO₂, et d'un mélange de ZrTiO₄ et de ZrO₂.

3. Lentille de projection (LN) selon la revendication 1 ou 2, dans laquelle le film antireflet (20) présente une réflectance maximale de 0,2 % ou moins dans une plage de longueurs d'onde de 430 nm à 670 nm.

4. Lentille de projection (LN) selon l'une quelconque des revendications 1 à 3, dans laquelle au moins trois types de matériaux vitreux parmi des matériaux vitreux classés en cinq types satisfaisant les formules (9) à (13) suivantes en ce qui concerne un indice de réfraction n_s sont utilisés en tant que substrat de lentille (10).

Drawing