(19)
(11) EP 3 482 494 A1

(12)

(43) Date of publication:
15.05.2019 Bulletin 2019/20

(21) Application number: 17734194.8

(22) Date of filing: 14.06.2017
(51) International Patent Classification (IPC): 
H03F 1/56(2006.01)
H03F 3/189(2006.01)
 H01L 23/467(2006.01)
H03F 3/60(2006.01)
(86) International application number:
PCT/US2017/037375
(87) International publication number:
WO 2018/009314 (11.01.2018 Gazette 2018/02)
(84) Designated Contracting States:
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated Extension States:
BA ME
Designated Validation States:
MA MD

(30) Priority: 05.07.2016 US 201615201905

(71) Applicant: Raytheon Company
Waltham, MA 02451-1449 (US)

(72) Inventors:
  • RODRIGUEZ, Istvan
    Malden, MA 02148 (US)
  • LAIGHTON, Christopher, M
    Boxborough, MA 01719 (US)
  • BIELUNIS, Alan, J.
    Hampstead, NH 03841-5310 (US)

(74) Representative: Jackson, Richard Eric 
Carpmaels & Ransford LLP One Southampton Row
London WC1B 5HA
London WC1B 5HA (GB)

   


(54) MICROWAVE MONOLITHIC INTEGRATED CIRCUIT (MMIC) AMPLIFIED HAVING DE-Q'ING SECTION WITH RESISTIVE VIA