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(11) | EP 3 599 640 A8 |
(12) | CORRECTED EUROPEAN PATENT APPLICATION |
Note: Bibliography reflects the latest situation |
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(54) | HIGH ELECTRON MOBILITY TRANSISTOR ESD PROTECTION STRUCTURES |
(57) A multi-gate High Electron Mobility Transistor (HEMT) can include a Two-Dimension
Electron Gas (2DEG) channel between the drain and the source. A first gate can be
disposed proximate the 2DEG channel between the drain and source. The first gate can
be configured to deplete majority carriers in the 2DEG channel proximate the first
gate when a potential applied between the first gate and the source is less than a
threshold voltage associated with the first gate. A second gate can be disposed proximate
the 2DEC channel, between the drain and the first gate. The second gate can be electrically
coupled to the drain. The second gate can be configured to deplete majority carriers
in the 2DEG channel proximate the second gate when a potential applied between the
second gate and the 2DEG channel between the second gate and the first gate is less
than a threshold voltage associated with the second gate. The threshold voltage associated
with the second gate can be equal to or greater than the threshold voltage associated
with the first gate.
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