Field of the Invention
[0001] The present invention relates to a method for electrolytically depositing a chromium
or chromium alloy layer on at least one substrate. In particular the present invention
refers to functional chromium layers, also often referred to as hard chromium layers.
Background of the Invention
[0002] Functional chromium layers usually have a much higher average layer thickness (from
at least 1 µm up to several hundreds of micro meters) compared to decorative chromium
layers (typically below 1 µm) and are characterized by excellent hardness and wear
resistance.
[0003] During the recent decades, chromium deposition methods relying on hexavalent chromium
are more and more replaced by deposition methods relying on trivalent chromium. Such
trivalent chromium-based methods are much more health- and environment friendly.
[0004] Hexavalent chromium is a serious contaminant in deposition methods relying on trivalent
chromium and is typically formed at the anode from trivalent chromium ions in an undesired
electrochemical reaction. It is crucial to at least suppress to the best extent possible
the formation of such hexavalent chromium or even to prevent it. If hexavalent chromium
accumulates in a respective deposition bath the quality of the deposited chromium
layer is significantly reduced and eventually the entire deposition method comes to
a halt if a critical concentration is exceeded. For example, a total amount of 1 g/L
hexavalent chromium in a trivalent chromium deposition bath is in most cases sufficient
to completely ruin a deposition bath and is therefore inacceptable.
[0005] Historically, there have been several approaches to this problem: In some deposition
baths bromide ions have been utilized as suppressors to catalyze anodic oxidation
of chemical species such as a variety of organic and inorganic compounds rather than
oxidation of trivalent chromium to hexavalent chromium.
[0006] US 4,477,315 A discloses a huge variety of reducing agents in an amount effective to maintain the
concentration of hexavalent chromium ions formed in the bath at a level at which satisfactory
chromium deposition is still obtained. However, US'315 primarily refers to decorative
applications.
[0007] Other approaches utilize a membrane or diaphragm in order to separate the anode from
the cathode and to prevent that trivalent chromium ions get into contact with the
anode.
[0008] WO 2015/110627 A1 refers to an electroplating bath for depositing chromium and to a process for depositing
chromium on a substrate using said electroplating bath. It is furthermore disclosed
that the electroplating bath is separated from the anode by a membrane, preferably
by an anodic or cationic exchange membrane.
[0009] However, the utilization of membranes or diaphragms also exhibits significant disadvantages.
Very frequently, such membranes are highly susceptible to high currents and often
show serious burnings and damages after a certain time interval of bath usage. Furthermore,
a plating setup comprising such a membrane or diaphragm is typically more sophisticated
to control, demands higher costs, and requires a higher degree of maintenance.
[0010] EP 3 106 544 A2 discloses a continuous trivalent chromium plating method and relates to a trivalent
chromium solution for decorative purposes. The solution contains boric acid, has a
pH in the range between 3.4 and 4.0, and utilizes a specific anode to cathode ratio.
The applied current density is in the range from 4 A/dm
2 to 12 A/dm
2.
[0011] US 2,748,069 relates to an electroplating solution of chromium, which allows obtaining very quickly
a chromium coating of very good physical and mechanical properties. The chromium plating
solution can be used for special electrolyzing methods, such as those known as spot
or plugging or penciling galvanoplasty. In such special methods the substrate is typically
not immersed into a respective electroplating solution.
[0012] RU 2139369 C1 refers to a method of electrochemical chrome plating of metals and their alloys.
Objective of the present Invention
[0013] It was the objective of the present invention to provide a deposition method for
functional chromium layers, which is less susceptible or prone to the presence of
tiny amounts of undesired hexavalent chromium, thus, allowing a broad operating range.
It is in particular desired that the method is less dependent on the presence of chemical
suppressors such as bromide ions as the only suppressing factor. Furthermore, the
method should be robust, simple, environmentally more acceptable, and cost efficient.
Summary of the Invention
[0014] This objective is solved by a method for electrolytically depositing a chromium or
chromium alloy layer according to claim 1.
Brief description of the figure
[0015] In Figure 1, a cathode current efficiency (CCE) plot is depicted, wherein on the
x-axis the usage of the bath is shown in Ah/L and on the y-axis the cathode current
efficiency. In the plot four plating scenarios (A, B, C, and D) are depicted. For
more details, see the "Examples" section below in the text.
Detailed Description of the Invention
[0016] Own experiments have shown that a total anodic current density of 6 A/dm
2 or more and a total cathodic current density of 18 A/dm
2 or more significantly stabilizes the method as a whole and significantly suppresses
the formation of hexavalent chromium on a long term (see examples below in the text).
Since the trivalent chromium ions are in contact with the at least one anode, a membrane
or a diaphragm in order to separate the trivalent chromium ions from the anode is
not needed. In other words, in the method of the present invention no separation means
are utilized in order to separate the trivalent chromium ions in the deposition bath
from the anode. This reduces costs, maintenance effort and allows a simplified operation
of the deposition method.
[0017] In the context of the present invention, the term "at least one" denotes (and is
exchangeable with) "one, two, three or more than three". Furthermore, "trivalent chromium"
refers to chromium with the oxidation number +3. The term "trivalent chromium ions"
refers to Cr
3+-ions in a free or complexed form. Likewise, "hexavalent chromium" refers to chromium
with the oxidation number +6 and thereto related compounds including ions containing
hexavalent chromium.
[0018] The term "not comprising" denotes that respective compounds are not intentionally
added to the aqueous deposition bath, such as boron containing compounds, in particular
boric acid is not contained in the deposition bath. In other words, the aqueous deposition
bath is substantially free of such compounds. This does not exclude that such compounds
are dragged in as impurities of other chemicals (preferably in a total amount of less
than 10 mg/L, based on the total volume of the deposition bath). However, typically
the total amount of such compounds is below the detection range and therefore not
critical during step (c) of the method of the present invention.
[0019] In the aqueous deposition bath utilized in the method of the present invention boron
containing compounds are not desired because they are environmentally problematic.
Containing boron containing compounds, waste water treatment is expensive and time
consuming. Furthermore, boric acid which is known as well working buffer compound
typically shows poor solubility and therefore has the tendency to form precipitates.
Although such precipitates can be solubilized upon heating, a respective aqueous deposition
bath cannot be utilized during this time. There is a significant risk that such precipitates
facilitate an undesired surface roughness. Thus, the aqueous deposition bath utilized
in the method of the present invention does not contain boron containing compounds.
Surprisingly, the aqueous deposition bath utilized in the method of the present invention
performs very well without boron containing compounds. As a result, such compounds
are not needed.
[0020] In the method of the present invention no hexavalent chromium is intentionally added
to the aqueous deposition bath. Very preferably, the aqueous deposition bath is free
of hexavalent chromium, i.e. the total amount of it is zero mg/L. However, as already
described above in the text, hexavalent chromium is usually formed at the anode in
an undesired electrochemical reaction if trivalent chromium ions are not separated
from the anode or otherwise prevented from its oxidation. Furthermore, very tiny amounts
of hexavalent chromium are also contaminants of other chemical compounds utilized
in the aqueous deposition bath (such contaminants are not intentionally added to the
deposition bath). Usually, such tiny amounts of hexavalent chromium are acceptable,
for example if the total amount of such hexavalent chromium is below the lower detection
limit of typical measuring methods (e.g. photometry with diphenylcarbazide; lower
detection limit is typically 15 to 20 mg per liter deposition bath). If the total
amount of hexavalent chromium is more than zero but 15 mg/L or below, it is considered
that the respective deposition bath does not contain hexavalent chromium. Furthermore,
such a total amount of hexavalent chromium apparently does not at all negatively affect
the deposition method in step (c) of the method of the present invention.
[0021] As evident from own examples, a total amount of anodically formed hexavalent chromium
exceeding the lower detection limit, e.g. a total amount of 100 mg/L or even 200 mg/L,
is in a few cases still tolerable, but very often less preferred. Preferred is an
aqueous deposition bath in step (a) comprising 0 mg/L to 150 mg/L hexavalent chromium,
based on the total volume of the aqueous deposition bath, more preferred 0 to 100
mg/L, even more preferred 0 mg/L to 45 mg/L, most preferred 0 mg/L to 30 mg/L. The
amount refers to a conversion to elementary chromium with a molecular weight of 52
g/mol, which likewise includes hexavalent chromium ions.
[0022] The method of the present invention includes steps (a) and (b), wherein the order
is (a) and subsequently (b) or vice versa. In each case, step (c) is carried out after
both steps, (a) and (b), have been carried out.
[0023] In the method of the present invention at least one substrate forming the cathode
is utilized. Typically, more than one substrate is utilized in the method of the present
invention simultaneously, forming an overall cathode surface with the total cathodic
current density of 18 A/dm
2 or more, and wherein the maximum total cathodic current density is 250 A/ dm
2. This means that the total cathodic current density includes all cathodes (substrates)
utilized in step (c) for simultaneous deposition.
[0024] In many cases it is preferred that in the method of the present invention more than
one anode is utilized, forming an overall anode surface with the total anodic current
density of 6 A/dm
2 or more, and wherein the maximum total anodic current density is 50 A/dm
2. This means that the total anodic current density includes all anodes utilized in
step (c) for deposition.
[0025] Furthermore, the term "overall [...] surface" (of all utilized cathodes and anodes,
respectively) refers to the geometrically derived overall surface actively participating
in the deposition process. For example, an anode partly covered by a shielding material
exhibits a reduced active surface because the shielded surface area of the anode does
not participate in the deposition process. Furthermore, a porous anode usually exhibits
a larger surface compared to the geometrically derived surface of the same anode.
In the context of the present invention, the term refers to the geometrically derived
surface actively participating in the deposition process in order to determine the
total anodic and cathodic current density.
[0026] In the method of the present invention the total cathodic current density is higher
than the anodic current density, preferably the total cathodic current density is
at least twice the total anodic current density. However, in exceptional cases, not
according to the invention, it is preferred that the total anodic current density
is higher than the total cathodic current density, in particular if the at least one
substrate has an extraordinarily large surface.
[0027] The electrical current is a direct current (DC), more preferably a direct current
without interruptions during step (c). The direct current is preferably not pulsed
(non-pulsed DC). Furthermore, the direct current preferably does not include reverse
pulses.
[0028] The present invention is mainly based on the finding that a deposition method for
a functional chromium or chromium alloy layer can be effectively stabilized by carefully
setting the total anodic current density to 6 A/dm
2 or more, wherein the maximum total anodic current density is 50 A/dm
2. A total anodic current density significantly below 6 A/dm
2, e.g. 5 A/dm
2 or 5.5 A/dm
2 is for practical reasons not desired because the positive effect is not noticeable.
As a result, no substantial stabilization effect is obtained and undesired amounts
of hexavalent chromium are formed.
[0029] According to own experiments, acceptable results were only obtained if the aqueous
deposition bath has a pH in the range from 4.1 to 7.0. In particular highly acidic
deposition baths (as mostly used for decorative purposes) did not provide satisfying
results or could not be used at all if utilized in step (c) of the method of the present
invention, even if the defined current densities were applied.
[0030] In the method of the present invention anodically formed hexavalent chromium is efficiently
suppressed compared to bromide as the only suppressing factor (see examples below).
Thus, the method of the present invention is an improved and more stabilized method.
This improved method is more simplified compared to methods known from the art and
furthermore results in excellent functional chromium or chromium alloy layers with
excellent wear resistance and hardness. According to own experiments, the at least
one substrate obtained after step (c) exhibits a Vickers Hardness of at least 700
HV
(0.05) (determined with 50 g "load"). The wear resistance is comparatively good as the wear
resistance obtained from hexavalent chromium based deposition methods.
[0031] Preferred is a method of the present invention, wherein the total anodic current
density is 8 A/dm
2 or more, preferably 9 A/dm
2 or more, more preferably 10 A/dm
2 or more.
[0032] According to the invention the upper limit of the total anodic current density is
50 A/dm
2. Typically, the total anodic current density is not exceeding 30 A/dm
2. For the majority of applications a method of the present invention is preferred,
wherein the total anodic current density is in the range from 8 A/dm
2 (preferably 9 A/dm
2) to 30 A/dm
2, preferably in the range from 8 A/dm
2 (preferably 9 A/dm
2) to 28 A/dm
2, most preferably in the range from 8 A/dm
2 (preferably 9 A/dm
2) to 22 A/dm
2.
[0033] However, in a few cases a higher total anodic current density is preferred, preferably
a maximum total anodic current density of 40 A/dm
2 or 50 A/dm
2. Thus, in these cases the total anodic current density is not exceeding 40 A/dm
2 and 50 A/dm
2, respectively. Such maximum anodic current densities might be necessary if substrates
with sophisticated geometries are subjected to the method of the present invention;
in particular if the substrate comprises an inside surface and an outside surface
and both surfaces are simultaneously to be deposited in step (c) of the method of
the present invention. In such cases the at least one substrate typically has an extraordinarily
large surface.
[0034] Preferred is a method of the present invention, wherein the total cathodic current
density is 30 A/dm
2 or more, preferably 35 A/dm
2 or more. A very much preferred total cathodic current density is 40 A/dm
2.
[0035] For the majority of applications a method of the present invention is preferred,
wherein the total cathodic current density is in the range from 20 A/dm
2 to 50 A/dm
2, preferably in the range from 35 A/dm
2 to 50 A/dm
2.
[0036] In the method of the present invention, the maximum total cathodic current density
is not in particular limited. According to the invention, the maximum total cathodic
current density is 250 A/dm
2, preferably 200 A/dm
2. Preferred examples include 180 A/dm
2, 150 A/dm
2, 100 A/dm
2, and 80 A/dm
2. However, in exceptional cases, not being according to the present invention, the
maximum total cathodic current density might exceed even 250 A/dm
2. Such a high maximum total cathodic current density usually requires high currents,
which are possible because no means for separation (such as a membrane or a diaphragm)
are used in the method of the present invention. In many cases, such separation means
would suffer severe damage if exposed to such high currents. Comparatively high cathodic
current densities are desired in order to obtain high deposition rates.
[0037] For the majority of applications, a method of the present invention is preferred,
wherein the ratio of the total anodic current density to the total cathodic current
density is in the range from 1:2 to 1:8, preferably in the range from 1:2 to 1:6,
more preferably in the range from 1:3 to 1:6, even more preferably in the range from
1:3 to 1:5. In particular in the more preferred and even more preferred ranges a very
significant suppression of formed hexavalent chromium is obtained.
[0038] In step (a) of the method of the present invention the aqueous deposition bath is
provided (providing also includes its manufacturing). Preferred is a method of the
present invention, wherein the total amount of the trivalent chromium ions in the
deposition bath is in the range from 10 g/L to 30 g/L, based on the total volume of
the deposition bath, preferably in the range from 17 g/L to 24 g/L. If the total amount
is significantly below 10 g/L in many cases an insufficient deposition is observed
and the deposited chromium or chromium alloy layer is usually of low quality. If the
total amount is significantly above 30 g/L, the deposition bath is not any longer
stable, which includes formation of undesired precipitates.
[0039] A preferred source of the trivalent chromium ions is basic or acidic chromium (III)
sulfate or chromium (III) chloride. A well-known basic chromium sulfate is Chrometan.
However, other available trivalent chromium salts (organic as well as inorganic) can
be used.
[0040] Preferably, the aqueous deposition bath utilized in the method of the present invention
contains sulfate ions, preferably in a total amount in the range from 50 g/L to 250
g/L, based on the total volume of the deposition bath.
[0041] The method of the present invention in particular supports chemical suppressors such
as bromide ions. Thus, a method of the present invention is preferred, wherein the
deposition bath comprises bromide ions, preferably in a total amount of at least 0.06
mol/L, based on the total volume of the deposition bath, preferably at least 0.1 mol/L,
more preferably at least 0.15 mol/L. Bromide ions are still an effective means to
chemically suppress the formation of anodic hexavalent chromium. However, combined
with the total anodic and cathodic current density defined for the method of the present
invention, formation of anodic hexavalent chromium is impressively and surprisingly
additionally suppressed.
[0042] In the method of the present invention, the aqueous deposition bath preferably contains
at least one further compound selected from the group consisting of organic complexing
compounds and ammonium ions. Preferred organic complexing compounds are carboxylic
organic acids and salts thereof, preferably aliphatic mono carboxylic organic acids
and salts thereof. More preferably the aforementioned organic complexing compounds
(and its preferred variants) have 1 to 10 carbon atoms, preferably 1 to 5 carbon atoms,
even more preferably 1 to 3 carbon atoms. Complexing compounds primarily form complexes
with the trivalent chromium ions in the aqueous deposition bath to increase bath stability.
Preferably, the molar ratio of the trivalent chromium ions to the organic complexing
compounds is in the range from 1:0.5 to 1:10.
[0043] As mentioned above, the pH of the deposition bath is crucial. The above or below
mentioned pH-values are referenced to 20°C. Preferred is a method of the present invention,
wherein the deposition bath has a pH in the range from 4.5 to 6.5, preferably in the
range from 5.0 to 6.0, most preferably in the range from 5.3 to 5.9. If the pH is
too acidic or significantly beyond pH 7.0, no satisfying functional chromium or chromium
alloy layer is obtained. Furthermore, precipitation easily occurs if the pH is too
acidic. As a result, the aqueous deposition bath can be optimally handled if the pH
is at least 5.0, preferably at least 5.3. An optimal chromium or chromium alloy layer
is obtained if the maximum pH is 6.0 and 5.9, respectively.
[0044] The aqueous deposition bath is sensitive to a number of metal cations which are undesired.
Hence, preferred is a method of the present invention, wherein the deposition bath
contains copper ions, zinc ions, nickel ions, and iron ions, each independently in
a total amount of 0 mg/L to 40 mg/L, based on the total volume of the deposition bath,
preferably each independently in a total amount of 0 mg/L to 20 mg/L, most preferably
each independently in a total amount of 0 mg/L to 10 mg/L. This preferably also includes
compounds comprising said metal cations. Most preferred, none of the above mentioned
metal cations are present at all, i.e. they are present each independently in a total
amount of zero mg/L. However, own experimental results have shown that a tiny amount
of these metal cations can be tolerated. If these tiny amounts are present, these
amounts are insufficient to serve as alloying metal in order to form a chromium alloy
layer on the at least one substrate. If the above mentioned total amount is significantly
exceeded the chromium and chromium alloy layer deposited in step (c) of the method
of the present invention exhibits undesired discolorations. Even more preferably,
in the aqueous deposition bath utilized in the method of the present invention, chromium
is the only side group element.
[0045] Furthermore, a method of the present invention is preferred, wherein the deposition
bath does not comprise glycine, aluminium ions, and tin ions. This ensures a functional
chromium and chromium alloy layer, respectively, with the desired attributes as outlined
throughout the text. Own experiments have shown that in a number of cases aluminium
and tin ions, in particular aluminium ions, significantly disturb and even inhibit
the deposition in step (c).
[0046] Preferred is a method of the present invention, wherein the aqueous deposition bath
does not contain sulfur containing compounds with a sulfur atom having an oxidation
number below +6. It is assumed that the absence of said sulfur containing compounds
results in an amorphous chromium layer and chromium alloy layer, respectively. Thus,
a method of the present invention is preferred, wherein the layer deposited in step
(c) is amorphous, determined by x-ray diffraction. This applies to the chromium or
chromium alloy layer obtained during step (c) of the method of the present invention
and prior to any further post-deposition surface treatment that might affect the atomic
structure of the deposited layer, changing it from amorphous to crystalline or partly
crystalline. It is furthermore assumed that such sulfur containing compounds negatively
affect the hardness of the functional chromium or functional chromium alloy layer
deposited in step (c).
[0047] The method of the present invention is preferably designed for industrial application
and large scale use. This means that typically a plurality of substrates is immersed
in the deposition bath in one single deposition scenario. Furthermore, the bath is
usually in active use over several weeks and months, which includes a reuse of the
deposition bath after step (c) for a subsequent deposition scenario. In order to ensure
a long bath life time, improved method stability, as obtained with the method of the
present invention, is much beneficial. A method of the present invention is preferred,
wherein the method is repeated with the aqueous deposition bath obtained after step
(c) and another substrate. Thus, the method of the present invention is preferably
a continuous method.
[0048] Preferred is a method of the present invention, wherein the aqueous deposition bath
provided in step (a) is repeatedly utilized in the method of the present invention,
preferably for a usage of at least 70 Ah per liter aqueous deposition bath, preferably
at least 100 Ah per liter, more preferably at least 200 Ah per liter, most preferably
at least 300 Ah per liter.
[0049] In step (b) of the present invention the at least one substrate and the at least
one anode is provided.
[0050] Preferred is a method of the present invention, wherein the at least one substrate
is a metal or metal alloy substrate, preferably a metal or metal alloy substrate independently
comprising one or more than one metal selected from the group consisting of copper,
iron, nickel, and aluminium, more preferably a metal or metal alloy substrate comprising
iron. Most preferably, the at least one substrate is a steel substrate, which is a
metal alloy substrate comprising iron. In many technical applications a steel substrate
with a wear resistant functional chromium or chromium alloy layer is needed. This
can in particular be achieved by the method of the present invention.
[0051] In some cases the substrate is preferably a coated substrate, more preferably a coated
metal substrate (for preferred metal substrates see the text above). The coating is
preferably a metal or metal alloy layer, preferably a nickel or nickel alloy layer,
most preferably a semibright nickel layer. In particular preferred is a steel substrate
coated with a nickel or nickel alloy layer. However, preferably other coatings are
alternatively or additionally present. In many cases such a coating significantly
increases corrosion resistance compared to a metal substrate without such a coating.
However, in some cases the substrates are not susceptible to corrosion due to a corrosion
inert environment (e.g. in an oil bath). In such a case a coating, preferably a nickel
or nickel alloy layer, is not necessarily needed.
[0052] Preferred is a method of the present invention, wherein the at least one anode is
independently selected from the group consisting of graphite anodes and mixed metal
oxide anodes (MMO), preferably independently selected from the group consisting of
graphite anodes and anodes of mixed metal oxide on titanium. Such anodes have shown
to be sufficiently resistant in the deposition bath of the present invention.
[0053] Preferably, the at least one anode does not contain any lead or chromium.
[0054] In step (c) of the method of the present invention the deposition of the chromium
or chromium alloy layer takes place. In most cases, a method of the present invention
is preferred, wherein the layer deposited in step (c) is a chromium alloy layer. Preferred
alloying elements are carbon and oxygen. Carbon is typically present because of organic
compounds usually present in the aqueous deposition bath. Preferably, the chromium
alloy layer does not comprise one, more than one or all elements selected from the
group consisting of sulfur, nickel, copper, aluminium, tin and iron. More preferably,
the only alloying elements are carbon and/or oxygen, most preferably carbon and oxygen.
Preferably, the chromium alloy layer contains 90 weight percent chromium or more,
based on the total weight of the alloy layer, more preferably 95 weight percent or
more.
[0055] Preferred is a method of the present invention, wherein the deposition bath in step
(c) has a temperature in the range from 20°C to 90°C, preferably in the range from
30°C to 70°C, more preferably in the range from 40°C to 60°C, most preferably in the
range from 45°C to 60°C. If the temperature significantly exceeds 90°C, an undesired
vaporization occurs, which negatively affects the concentration of the bath components
(even up to the danger of precipitation). Furthermore, the formation of hexavalent
chromium is significantly less suppressed. If the temperature is significantly below
20°C the deposition is insufficient. Temperatures significantly below 40°C are generally
acceptable but in a few cases the deposition quality and the extent of deposition
are not sufficient, in particular between 20°C und 35°C. In a number of cases the
chromium and chromium alloy layer gets undesirably dull, adhesion of said layer and
deposition rate is low, and reproducibility is in some cases difficult. However, optimal
and improved results are obtained at a temperature of at least 40°C, preferably a
temperature in the range from 40°C to 90°C, more preferably in the range from 40°C
to 70°C, even more preferably in the range from 40°C to 60°C. Most preferred is a
temperature of at least 45°C, preferably a temperature in the range from 45°C to 90°C,
more preferably in the range from 45°C to 70°C, even more preferably in the range
from 45°C to 60°C.
[0056] During step (c), the aqueous deposition bath is preferably continually agitated,
preferably by stirring.
[0057] Preferred is a method of the present invention, wherein in step (c) the chromium
or chromium alloy layer is deposited with a deposition rate in the range from 0.3
µm/min to 1.2 µm/min, based on a total cathodic current density of 40 A/dm
2. This means that the deposition rate is to be evaluated and referenced, respectively,
at a total cathodic reference current density of 40 A/dm
2. It does not mean that the method of the present invention needs to be carried out
at only 40 A/dm
2 in order to obtain a deposition rate in the above mentioned range. Thus, other deposition
rates need to be referenced to 40 A/dm
2. Above mentioned deposition rates typically result in economically acceptable deposition
times in combination with the demanded quality of the chromium or chromium alloy layer.
[0058] Furthermore, preferred is a method of the present invention, wherein the average
layer thickness of the chromium or chromium alloy layer deposited in step (c) is 1.0
µm or more, preferably 2 µm or more, more preferably 4 µm or more, even more preferably
5 µm or more, most preferably the average layer thickness is in the range from 5 µm
to 200 µm, preferably 5 µm to 150 µm. These are typical layer thicknesses for functional
chromium or chromium alloy layers. Such thicknesses are needed to provide the needed
wear resistance, which is typically demanded. In some cases the lower limit preferably
and specifically includes 6 µm, 8 µm, 10 µm, 15 µm or 20 µm.
[0059] Very preferred is a method of the present invention, wherein
in step (c) the chromium or chromium alloy layer is directly deposited onto the substrate,
or
the substrate defined in step (b) additionally comprises a nickel or nickel alloy
layer and in step (c) the chromium or chromium alloy layer is deposited on said nickel
or nickel alloy layer, preferably on a semibright nickel layer.
[0060] Most preferably, the chromium or chromium alloy layer is directly deposited onto
a steel substrate.
[0061] The present invention is described in more detail by the following non limiting examples.
Examples
[0062] In a first step four identical deposition bath samples (approximately 1 L each) have
been prepared, each sample containing a typical amount of 10 g/L to 30 g/L trivalent
chromium ions, 50 g/L to 250 g/L sulfate ions, at least one organic complexing compound,
ammonium ions, and bromide ions. No boron containing compounds have been used.
[0063] In a second step each of the above mentioned samples was utilized in a respective
test plating scenario (A, B, C, and D) with the parameters as shown in Table 1. Scenarios
B, C, and D are according to the invention, wherein scenario A is a comparative example
because the total anodic current density is below 6 A/dm
2.
Table 1
| |
A |
B |
C |
D |
| ACD* [A/dm2] |
3 |
6 |
10 |
20 |
| CCD** [A/dm2] |
40 |
| total usage time [Ah/L] |
89.1 |
99.6 |
99.6 |
89.1 |
| bath temperature [°C] |
50 |
| pH |
5.3 to 5.9 |
| anode |
plurality of graphite anodes |
* total Anodic Current Density
** total Cathodic Current Density |
[0064] In each scenario, a functional chromium layer was successively deposited on several
test plating specimens (10 cm steel rods coated with a nickel layer), and only trivalent
chromium ions, the at least one organic complexing compound, and a hydroxide have
been replenished in intervals according to their consumption and/or drag out during
the respective scenario (no further compounds have been replenished). The average
chromium layer thickness was at least 10 µm.
[0065] Throughout each scenario, the cathodic current efficiency (CCE) was determined according
to Faraday's law and used as a marker to evaluate the quality of each deposition bath
sample in terms of hexavalent chromium contamination.
[0066] Furthermore, during each scenario in each deposition bath sample the total amount
of hexavalent chromium has been determined by means of classic photometry with diphenylcarbazide.
In samples of scenarios B, C, and D no hexavalent chromium was detectable (i.e. hexavalent
chromium was far below 20 mg/L). The respective deposition bath sample of scenario
A showed after 75 Ah/L a total amount of hexavalent chromium of more than 1 g per
liter deposition bath and after 86 Ah/L of more than 2.3 g per liter deposition bath.
As confirmed by test plating scenario A, a total amount of hexavalent chromium of
1 g/L or more results in a cathodic current efficiency of zero and, thus, no chromium
layer is anymore deposited in step (c).
[0067] In Fig. 1 the experimental results are visualized. Fig. 1 confirms that the cathodic
current efficiency in scenarios B, C, and D remains comparatively constant, wherein
in scenario A the cathodic current efficiency dramatically dropped to an extent that
this deposition bath sample was not any more usable. Thus, total anodic and cathodic
current densities as defined in the method of the present invention effectively suppress
anodically formed hexavalent chromium.
1. A method for electrolytically depositing a chromium or chromium alloy layer on at
least one substrate, the method comprising the steps
(a) providing an aqueous deposition bath with a pH in the range from 4.1 to 7.0,
- comprising trivalent chromium ions,
- comprising 0 mg/L to 200 mg/L hexavalent chromium, based on the total volume of
the deposition bath, and
- not comprising boron containing compounds,
(b) providing the at least one substrate and at least one anode, and
(c) immersing the at least one substrate in the aqueous deposition bath and applying
an electrical direct current such that the chromium or chromium alloy layer is deposited
on the at least one substrate, wherein
the at least one substrate forms the cathode having a total cathodic current density
and the at least one anode having a total anodic current density,
with the proviso that
- the total anodic current density is 6 A/dm2 or more, wherein the maximum total anodic current density is 50 A/dm2,
- the total cathodic current density is 18 A/dm2 or more, wherein the maximum total cathodic current density is 250 A/dm2,
- the total cathodic current density is higher than the total anodic current density,
and
- the at least one substrate and the at least one anode are present in the deposition
bath such that the trivalent chromium ions are in contact with the at least one anode.
2. The method of claim 1, wherein the total anodic current density is 8 A/dm2 or more, preferably 9 A/dm2 or more, more preferably 10 A/dm2 or more.
3. The method of claim 1 or 2, wherein the total cathodic current density is 30 A/dm2 or more, preferably 35 A/dm2 or more.
4. The method of any of the preceding claims, wherein the ratio of the total anodic current
density to the total cathodic current density is in the range from 1:2 to 1:8, preferably
in the range from 1:2 to 1:6, more preferably in the range from 1:3 to 1:6, even more
preferably in the range from 1:3 to 1:5.
5. The method of any of the preceding claims, wherein the total amount of the trivalent
chromium ions in the deposition bath is in the range from 10 g/L to 30 g/L, based
on the total volume of the deposition bath, preferably in the range from 17 g/L to
24 g/L.
6. The method of any of the preceding claims, wherein the deposition bath comprises bromide
ions, preferably in a total amount of at least 0.06 mol/L, based on the total volume
of the deposition bath, preferably at least 0.1 mol/L, more preferably at least 0.15
mol/L.
7. The method of any of the preceding claims, wherein the deposition bath has a pH in
the range from 4.5 to 6.5, preferably in the range from 5.0 to 6.0, most preferably
in the range from 5.3 to 5.9.
8. The method of any of the preceding claims, wherein the deposition bath contains copper
ions, zinc ions, nickel ions, and iron ions, each independently in a total amount
of 0 mg/L to 40 mg/L, based on the total volume of the deposition bath, preferably
each independently in a total amount of 0 mg/L to 20 mg/L, most preferably each independently
in a total amount of 0 mg/L to 10 mg/L.
9. The method of any of the preceding claims, wherein the deposition bath does not comprise
or in a total amount of less than 10 mg/L, based on the total volume of the deposition
bath, glycine, aluminium ions, and tin ions.
10. The method of any of the preceding claims, wherein the method is repeated with the
aqueous deposition bath obtained after step (c) and another substrate.
11. The method of any of the preceding claims, wherein the at least one substrate is a
metal or metal alloy substrate, preferably a metal or metal alloy substrate independently
comprising one or more than one metal selected from the group consisting of copper,
iron, nickel, and aluminium.
12. The method of any of the preceding claims, wherein the at least one anode is independently
selected from the group consisting of graphite anodes and mixed metal oxide anodes,
preferably independently selected from the group consisting of graphite anodes and
anodes of mixed metal oxide on titanium.
13. The method of any of the preceding claims, wherein the deposition bath in step (c)
has a temperature in the range from 20°C to 90°C, preferably in the range from 30°C
to 70°C, more preferably in the range from 40°C to 60°C, most preferably in the range
from 45°C to 60°C.
14. The method of any of the preceding claims, wherein in step (c) the chromium or chromium
alloy layer is deposited with a deposition rate in the range from 0.3 µm/min to 1.2
µm/min based on a total cathodic current density of 40 A/dm2.
15. The method of any of the preceding claims, wherein the average layer thickness of
the chromium or chromium alloy layer deposited in step (c) is 1.0 µm or more, preferably
2 µm or more, more preferably 4 µm or more, even more preferably 5 µm or more, most
preferably the average layer thickness is in the range from 5 µm to 200 µm, preferably
5 µm to 150 µm.
1. Verfahren zur elektrolytischen Abscheidung einer Chrom- oder Chromlegierungsschicht
auf mindestens einem Substrat, wobei das Verfahren die Schritte umfasst:
(a) Bereitstellen eines wässrigen Abscheidungsbades mit einem pH-Wert im Bereich von
4,1 bis 7,0,
- umfassend dreiwertige Chromionen,
- umfassend 0 mg/L bis 200 mg/L sechswertiges Chrom, bezogen auf das Gesamtvolumen
des Abscheidungsbades, und
- nicht umfassend borhaltige Verbindungen,
(b) Bereitstellen des mindestens einen Substrats und mindestens einer Anode, und
(c) Tauchen des mindestens einen Substrats in das wässrige Abscheidungsbad und Anlegen
eines elektrischen Gleichstroms, so dass die Chrom- oder Chromlegierungsschicht auf
dem mindestens einen Substrat abgeschieden wird, wobei
das mindestens eine Substrat die Kathode bildet, die eine gesamte kathodische Stromdichte
aufweist, und wobei die mindestens eine Anode eine gesamte anodische Stromdichte aufweist,
mit der Maßgabe, dass
- die gesamte anodische Stromdichte 6 A/dm2 oder mehr beträgt, wobei die maximale gesamte anodische Stromdichte 50 A/dm2 beträgt,
- die gesamte kathodische Stromdichte 18 A/dm2 oder mehr beträgt, wobei die maximale gesamte kathodische Stromdichte 250 A/dm2 beträgt,
- die gesamte kathodische Stromdichte höher als die gesamte anodische Stromdichte
ist, und
- das mindestens eine Substrat und die mindestens eine Anode in dem Abscheidungsbad
derart vorhanden sind, dass die dreiwertigen Chromionen in Kontakt mit der mindestens
einen Anode sind.
2. Verfahren nach Anspruch 1, wobei die gesamte anodische Stromdichte 8 A/dm2 oder mehr, vorzugsweise 9 A/dm2 oder mehr, bevorzugter 10 A/dm2 oder mehr beträgt.
3. Verfahren nach Anspruch 1 oder 2, wobei die gesamte kathodische Stromdichte 30 A/dm2 oder mehr, vorzugsweise 35 A/dm2 oder mehr beträgt.
4. Verfahren nach einem der vorhergehenden Ansprüche, wobei das Verhältnis der gesamten
anodischen Stromdichte zu der gesamten kathodischen Stromdichte im Bereich von 1:2
bis 1:8 liegt, vorzugsweise im Bereich von 1:2 bis 1:6, bevorzugter im Bereich von
1:3 bis 1:6, noch bevorzugter im Bereich von 1:3 bis 1:5.
5. Verfahren nach einem der vorhergehenden Ansprüche, wobei die Gesamtmenge der dreiwertigen
Chromionen in dem Abscheidungsbad im Bereich von 10 g/L bis 30 g/L liegt, bezogen
auf das Gesamtvolumen des Abscheidungsbades, vorzugsweise im Bereich von 17 g/L bis
24 g/L.
6. Verfahren nach einem der vorhergehenden Ansprüche, wobei das Abscheidungsbad Bromidionen
umfasst, vorzugsweise in einer Gesamtmenge von mindestens 0,06 mol/L, bezogen auf
das Gesamtvolumen des Abscheidungsbades, vorzugsweise mindestens 0,1 mol/L, bevorzugter
mindestens 0,15 mol/L.
7. Verfahren nach einem der vorhergehenden Ansprüche, wobei das Abscheidungsbad einen
pH-Wert im Bereich von 4,5 bis 6,5, vorzugsweise im Bereich von 5,0 bis 6,0, am meisten
bevorzugt im Bereich von 5,3 bis 5,9 hat.
8. Verfahren nach einem der vorhergehenden Ansprüche, wobei das Abscheidungsbad Kupferionen,
Zinkionen, Nickelionen und Eisenionen enthält, jeweils unabhängig in einer Gesamtmenge
von 0 mg/L bis 40 mg/L, bezogen auf das Gesamtvolumen des Abscheidungsbades, vorzugsweise
jeweils unabhängig in einer Gesamtmenge von 0 mg/L bis 20 mg/L, am meisten bevorzugt
jeweils unabhängig in einer Gesamtmenge von 0 mg/L bis 10 mg/L.
9. Verfahren nach einem der vorhergehenden Ansprüche, wobei das Abscheidungsbad nicht
Glycin, Aluminiumionen und Zinnionen umfasst, oder diese in einer Gesamtmenge von
weniger als 10 mg/L umfasst, bezogen auf das Gesamtvolumen des Abscheidungsbades.
10. Verfahren nach einem der vorhergehenden Ansprüche, wobei das Verfahren mit dem wässrigen
Abscheidungsbad, das nach Schritt (c) erhalten wird, und einem anderen Substrat wiederholt
wird.
11. Verfahren nach einem der vorhergehenden Ansprüche, wobei das mindestens eine Substrat
ein Metall- oder Metalllegierungssubstrat ist, vorzugsweise ein Metall- oder Metalllegierungssubstrat,
das unabhängig ein oder mehr als ein Metall ausgewählt aus der Gruppe bestehend aus
Kupfer, Eisen, Nickel und Aluminium umfasst.
12. Verfahren nach einem der vorhergehenden Ansprüche, wobei die mindestens eine Anode
unabhängig ausgewählt ist aus der Gruppe bestehend aus Graphitanoden und Mischmetalloxidanoden,
vorzugsweise unabhängig ausgewählt ist aus der Gruppe bestehend aus Graphitanoden
und Anoden aus Mischmetalloxid auf Titan.
13. Verfahren nach einem der vorhergehenden Ansprüche, wobei das Abscheidungsbad in Schritt
(c) eine Temperatur im Bereich von 20 °C bis 90 °C, vorzugsweise im Bereich von 30
°C bis 70 °C, bevorzugter im Bereich von 40 °C bis 60 °C, am meisten bevorzugt im
Bereich von 45 °C bis 60 °C aufweist.
14. Verfahren nach einem der vorhergehenden Ansprüche, wobei in Schritt (c) die Chrom-
oder Chromlegierungsschicht mit einer Abscheidungsrate im Bereich von 0,3 pm/min bis
1,2 pm/min abgeschieden wird, bezogen auf eine gesamte kathodische Stromdichte von
40 A/dm2.
15. Verfahren nach einem der vorhergehenden Ansprüche, wobei die durchschnittliche Schichtdicke
der in Schritt (c) abgeschiedenen Chrom- oder Chromlegierungsschicht 1,0 µm oder mehr,
vorzugsweise 2 µm oder mehr, bevorzugter 4 µm oder mehr, noch bevorzugter 5 µm oder
mehr beträgt, wobei am meisten bevorzugt die durchschnittliche Schichtdicke im Bereich
von 5 µm bis 200 µm, vorzugsweise 5 µm bis 150 µm liegt.
1. Procédé de dépôt électrolytique d'une couche de chrome ou d'alliage de chrome sur
au moins un substrat, le procédé comprenant les étapes suivantes :
(a) obtention d'un bain de dépôt aqueux avec un pH dans la gamme de 4,1 à 7,0,
- comprenant des ions chrome trivalents,
- comprenant 0 mg/L à 200 mg/L de chrome hexavalent, rapporté au volume total du bain
de dépôt, et
- ne comprenant pas de composés contenant du bore,
(b) obtention de l'au moins un substrat et d'au moins une anode, et
(c) immersion de l'au moins un substrat dans le bain de dépôt aqueux et application
d'un courant électrique continu de telle sorte que la couche de chrome ou d'alliage
de chrome soit déposée sur l'au moins un substrat, dans lequel
l'au moins un substrat forme la cathode ayant une densité de courant cathodique totale
et l'au moins une anode ayant une densité de courant anodique totale,
à condition que
- la densité de courant anodique totale soit de 6 A/dm2 ou plus, la densité de courant anodique totale maximale étant de 50 A/dm2,
- la densité de courant cathodique totale soit de 18 A/dm2 ou plus, la densité de courant cathodique totale maximale étant de 250 A/dm2,
- la densité de courant cathodique totale soit supérieure à la densité de courant
anodique totale, et
- l'au moins un substrat et l'au moins une anode soient présents dans le bain de dépôt
de telle sorte que les ions chrome trivalents soient en contact avec l'au moins une
anode.
2. Procédé de la revendication 1, dans lequel la densité de courant anodique totale est
de 8 A/dm2 ou plus, de préférence 9 A/dm2 ou plus, mieux encore 10 A/dm2 ou plus.
3. Procédé de la revendication 1 ou 2, dans lequel la densité de courant cathodique totale
est de 30 A/dm2 ou plus, de préférence 35 A/dm2 ou plus.
4. Procédé de l'une quelconque des revendications précédentes, dans lequel le rapport
entre la densité de courant anodique totale et la densité de courant cathodique totale
se situe dans la gamme de 1:2 à 1:8, de préférence dans la gamme de 1:2 à 1:6, mieux
dans la gamme de 1:3 à 1:6, mieux encore dans la gamme de 1:3 à 1:5.
5. Procédé de l'une quelconque des revendications précédentes, dans lequel la quantité
totale des ions chrome trivalents dans le bain de dépôt se situe dans la gamme de
10 g/L à 30 g/L, rapporté au volume total du bain de dépôt, de préférence dans la
gamme de 17 g/L à 24 g/L.
6. Procédé de l'une quelconque des revendications précédentes, dans lequel le bain de
dépôt comprend des ions bromure, de préférence dans une quantité totale d'au moins
0,06 mol/L, rapporté au volume total du bain de dépôt, de préférence au moins 0,1
mol/L, mieux encore au moins 0,15 mol/L.
7. Procédé de l'une quelconque des revendications précédentes, dans lequel le bain de
dépôt a un pH dans la gamme de 4,5 à 6,5, de préférence dans la gamme de 5,0 à 6,0,
idéalement dans la gamme de 5,3 à 5,9.
8. Procédé de l'une quelconque des revendications précédentes, dans lequel le bain de
dépôt contient des ions cuivre, des ions zinc, des ions nickel et des ions fer, chacun
indépendamment dans une quantité totale de 0 mg/L à 40 mg/L, rapporté au volume total
du bain de dépôt, de préférence chacun indépendamment dans une quantité totale de
0 mg/L à 20 mg/L, idéalement chacun indépendamment dans une quantité totale de 0 mg/L
à 10 mg/L.
9. Procédé de l'une quelconque des revendications précédentes, dans lequel le bain de
dépôt ne comprend pas, ou comprend dans une quantité totale de moins de 10 mg/L, rapporté
au volume total du bain de dépôt, de la glycine, des ions aluminium, et des ions étain.
10. Procédé de l'une quelconque des revendications précédentes, le procédé étant répété
avec le bain de dépôt aqueux obtenu après l'étape (c) et un autre substrat.
11. Procédé de l'une quelconque des revendications précédentes, dans lequel l'au moins
un substrat est un substrat de métal ou d'alliage métallique, de préférence un substrat
de métal ou d'alliage métallique comprenant indépendamment un ou plus d'un métal choisi
dans le groupe constitué par le cuivre, le fer, le nickel, et l'aluminium.
12. Procédé de l'une quelconque des revendications précédentes, dans lequel l'au moins
une anode est indépendamment choisie dans le groupe constitué par les anodes de graphite
et les anodes d'oxyde métallique mixte, de préférence indépendamment choisie dans
le groupe constitué par les anodes de graphite et les anodes d'oxyde métallique mixte
sur titane.
13. Procédé de l'une quelconque des revendications précédentes, dans lequel le bain de
dépôt à l'étape (c) a une température dans la gamme de 20 °C à 90 °C, de préférence
dans la gamme de 30 °C à 70 °C, mieux encore dans la gamme de 40 °C à 60 °C, idéalement
dans la gamme de 45 °C à 60 °C.
14. Procédé de l'une quelconque des revendications précédentes dans lequel, à l'étape
(c), la couche de chrome ou d'alliage de chrome est déposée avec une vitesse de dépôt
dans la gamme de 0,3 pm/min à 1,2 pm/min, sur la base d'une densité de courant cathodique
totale de 40 A/dm2.
15. Procédé de l'une quelconque des revendications précédentes, dans lequel l'épaisseur
de couche moyenne de la couche de chrome ou d'alliage de chrome déposée à l'étape
(c) est de 1,0 µm ou plus, de préférence 2 µm ou plus, mieux 4 µm ou plus, mieux encore
5 µm ou plus, idéalement l'épaisseur de couche moyenne se situe dans la gamme de 5
µm à 200 µm, de préférence 5 µm à 150 µm.