(19)
(11) EP 3 698 429 B8

(12) CORRECTED EUROPEAN PATENT SPECIFICATION
Note: Bibliography reflects the latest situation

(15) Correction information:
Corrected version no 1 (W1 B1)

(48) Corrigendum issued on:
06.11.2024 Bulletin 2024/45

(45) Mention of the grant of the patent:
02.10.2024 Bulletin 2024/40

(21) Application number: 18869267.7

(22) Date of filing: 27.08.2018
(51) International Patent Classification (IPC): 
H01P 1/12(2006.01)
H01P 5/02(2006.01)
H01H 59/00(2006.01)
H01P 1/18(2006.01)
H01H 1/00(2006.01)
H01Q 3/26(2006.01)
(52) Cooperative Patent Classification (CPC):
H01Q 3/2682; H01P 1/127; H01H 1/0036; H01H 59/0009; H01P 1/184; H01P 5/028
(86) International application number:
PCT/US2018/048090
(87) International publication number:
WO 2019/078952 (25.04.2019 Gazette 2019/17)

(54)

HIGH IMPEDANCE RF MEMS TRANSMISSION DEVICES AND METHOD OF MAKING THE SAME

HF-MEMS-ÜBERTRAGUNGSVORRICHTUNGEN MIT HOHER IMPEDANZ UND VERFAHREN ZU IHRER HERSTELLUNG

DISPOSITIFS DE TRANSMISSION MEMS RF À HAUTE IMPÉDANCE ET LEUR PROCÉDÉ DE FABRICATION


(84) Designated Contracting States:
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

(30) Priority: 18.10.2017 US 201715786696

(43) Date of publication of application:
26.08.2020 Bulletin 2020/35

(73) Proprietor: GE Intellectual Property Licensing, LLC
Niskayuna, NY 12309 (US)

(72) Inventor:
  • IANNOTTI, Joseph Alfred
    Niskayuna, New York 12309 (US)

(74) Representative: Dennemeyer & Associates S.A. 
Postfach 70 04 25
81304 München
81304 München (DE)


(56) References cited: : 
US-A1- 2004 227 583
US-A1- 2017 187 086
US-B2- 8 076 989
US-A1- 2005 068 129
US-B2- 7 253 699
   
  • DEY SUKOMAL ET AL: "Reliability Analysis of Ku-Band 5-bit Phase Shifters Using MEMS SP4T and SPDT Switches", IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, PLENUM, USA, vol. 63, no. 12, 1 December 2015 (2015-12-01), pages 3997 - 4012, XP011592618, ISSN: 0018-9480, [retrieved on 20151202], DOI: 10.1109/TMTT.2015.2491938
  • LI-YA MA ET AL.: "A K-Band Switched-Line Phase Shifter Using Novel Low-Voltage Low-Loss RF-MEMS Switch", 2017 IEEE REGIONAL SYMPOSIUM ON MICRO AND NANOELECTRONICS (RSM, 23 August 2017 (2017-08-23), Batu Ferringhi, Malaysia, pages 14 - 17, XP033227299, DOI: doi:10.1109/RSM.2017.8069125
  • SIAMAK FOULADI ET AL.: "CMOS-MEMS Tuning and Impedance Matching Circuits for Reconfigurable RF Front-Ends", 2012 IEEE /MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, 17 June 2012 (2012-06-17), Montreal, QC, Canada, pages 1 - 3, XP032217292, DOI: doi:10.1109/MWSYM.2012.6259776
  • AMRITA CHAKRABORTY ET AL.: "Paradigm Phase Shift: RF MEMS Phase Shifters: An Overview", IEEE MICROWAVE MAGAZINE, vol. 18, January 2017 (2017-01-01), pages 22 - 41, XP011636510, DOI: doi:10.1109/MMM.2016.2616155
   
Note: Within nine months from the publication of the mention of the grant of the European patent, any person may give notice to the European Patent Office of opposition to the European patent granted. Notice of opposition shall be filed in a written reasoned statement. It shall not be deemed to have been filed until the opposition fee has been paid. (Art. 99(1) European Patent Convention).