CROSS REFERENCE TO RELATED APPLICATIONS
BACKGROUND
Field of the Invention
[0002] The present invention relates to an electronic device, and in particular to an electronic
device having ohmic contact electrodes with different sizes.
Description of the Related Art
[0003] Currently, light-emitting diode (LED) chips with different sizes or different driving
currents are usually used to achieve white color balance. However, the process of
manufacturing or activating LEDs may be complicated by the above arrangement. Therefore,
how to solve the aforementioned problem has become an important topic.
BRIEF SUMMARY
[0004] Some embodiments of the disclosure provide an electronic device, including: a substrate,
a first light-emitting element and a second light-emitting element. The first light-emitting
element is disposed on the substrate and configured to emit a first color light under
a first current density when the substrate provides a first current to the first light-emitting
element. The second light-emitting element is disposed on the substrate and configured
to emit a second color light under a second current density when the substrate provides
a second current to the second light-emitting element. The first current is equal
to the second current, and the first current density is different from the second
current density.
[0005] Some embodiments of the disclosure provide an electronic device, including: a substrate,
a first light-emitting element and a second light-emitting element. The first light-emitting
element is disposed on the substrate and configured to emit a first color light, wherein
the first light-emitting element includes a first semiconductor layer and a first
ohmic contact electrode that is in contact with the first semiconductor layer. The
second light-emitting element is disposed on the substrate and configured to emit
a second color light, wherein the second light-emitting element includes a second
semiconductor layer and a second ohmic contact electrode that is in contact with the
second semiconductor layer. A first ratio of an area of the first ohmic contact electrode
and an area of the first semiconductor layer is different from a second ratio of an
area of the second ohmic contact electrode and an area of the second semiconductor
layer.
[0006] A detailed description is given in the following embodiments with reference to the
accompanying drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
[0007] The present disclosure can be more fully understood by reading the subsequent detailed
description and examples with references made to the accompanying drawings, wherein:
Fig. 1 is a cross-sectional view illustrating an electronic device in accordance with
some embodiments of the present disclosure.
Fig. 2 is a top view illustrating the electronic device shown in Fig. 1.
Fig. 3 is a cross-sectional view illustrating the electronic device in accordance
with some embodiments of the present disclosure.
Fig. 4 is a top view illustrating the electronic device shown in Fig. 3.
Fig. 5 is a cross-sectional view illustrating the electronic device in accordance
with some embodiments of the present disclosure.
Fig. 6 is a cross-sectional view illustrating the electronic device in accordance
with some embodiments of the present disclosure.
Fig. 7 is a cross-sectional view illustrating the electronic device in accordance
with some embodiments of the present disclosure.
Fig. 8 is a cross-sectional view illustrating the electronic device in accordance
with some embodiments of the present disclosure.
Fig. 9 is a cross-sectional view illustrating the electronic device in accordance
with some embodiments of the present disclosure.
Fig. 10 is a cross-sectional view illustrating the electronic device in accordance
with some embodiments of the present disclosure.
Fig. 11 is a cross-sectional view illustrating a conductive pad in accordance with
some embodiments of the present disclosure.
Fig. 12 is a schematic diagram illustrating the relationship between the light-emitting
efficiency and the current density in accordance with some other embodiments of the
present disclosure.
DETAILED DESCRIPTION OF THE INVENTION
[0008] The electronic devices of some embodiments of the present disclosure are described
in the following description. The specific embodiments disclosed are provided merely
to clearly describe the usage of the present disclosure by some specific methods without
limiting the scope of the present disclosure.
[0009] In addition, in this specification, relative expressions may be used. For example,
"lower", "bottom", "higher" or "top" are used to describe the position of one element
relative to another. It should be noted that if a device is flipped upside down, an
element that is "lower" will become an element that is "higher".
[0010] It should be understood that, although the terms "first", "second," "third" etc.
may be used herein to describe various elements, regions, layers and/or portions,
and these elements, regions, layers, and/or portions should not be limited by these
terms. These terms are only used to distinguish one element, component, region, layer,
or portion. Thus, a first element, component, region, layer or portion discussed below
could be termed a second element, component, region, layer or portion without departing
from the teachings of some embodiments of the present disclosure. In addition, for
the sake of clarity, the terms "first", "second," "third" etc. may not be used in
the specification to distinguish different elements. The first element, the second
element and/or the third element recited in the claims may be referred to any element
that conforms to the description in the specification.
[0011] Unless defined otherwise, all terms (including technical and scientific terms) used
herein have the same meaning as commonly understood by one of ordinary skill in the
art to which this disclosure belongs. It should be appreciated that, in each case,
the term, which is defined in a commonly used dictionary, should be interpreted as
having a meaning that conforms to the relative skills of the present disclosure and
the background or the context of the present disclosure, and should not be interpreted
in an idealized or overly formal manner unless so defined in the present disclosure.
In addition, the term "substrate" in the following paragraphs may include elements
formed on the substrate or various layers covering the substrate, such as any active
component (e.g. transistor) that is formed thereon as required. However, in order
to simplify the figures herein, it is shown as a plane substrate.
[0012] Fig. 1 is a cross-sectional view illustrating an electronic device 100 in accordance
with some embodiments of the present disclosure. It should be noted that the electronic
device 100 may include a display device, an antenna device, a sensing device or a
tiled device, but is not limited thereto. The electronic device may be a bendable
or flexible electronic device. The electronic device may include, for example, a liquid-crystal
light-emitting diode, and the light-emitting diode may include, for example, an organic
light-emitting diode (OLED), a mini LED, a micro LED or quantum dot (QD) light-emitting
diode (which may be referred to as QLED, QDLED), fluorescence, phosphor, or other
suitable materials, and the materials can be arranged and combined arbitrarily, but
the present disclosure is not limited thereto. The antenna device may be, for example,
a liquid-crystal antenna, but it is not limited thereto. The tiled device may be,
for example, a display tiled device or an antenna tiled device, but it is not limited
thereto. It should be noted that the electronic device 100 may be any of the aforementioned
arrangement but is not limited thereto.
[0013] As shown in Fig. 1, the electronic device 100 includes a substrate 110 and a plurality
of light-emitting elements (including a first light-emitting element 120, a second
light-emitting element 130 and a third light-emitting element 140) that are disposed
on the substrate 110. It should be understood that although three light-emitting elements
are shown in this embodiment, those skilled in the art may arbitrarily adjust the
number of light-emitting elements as required. In this embodiment, the substrate may
supply the same current to the first light-emitting element 120, the second light-emitting
element 130, and the third light-emitting element 140, the first light-emitting element
120, the second light-emitting element 130 and the third light-emitting element 140
emit colored light. For example, the first light-emitting element 120, the second
light-emitting element 130 and the third light-emitting element 140 each include a
blue LED. A light-transmitting layer 124 is disposed on the first light-emitting element
120, a color conversion layer 134 is disposed on the second light-emitting element
130, and a color conversion layer 144 is disposed on the third light-emitting element
140, the first light-emitting element 120, the second light-emitting element 130 and
the third light-emitting element 140 emit different colors of light. In other embodiments,
the first light-emitting element 120 includes a blue LED, the second light-emitting
element 130 includes a green LED, and the third light-emitting element 140 includes
a red LED. In other embodiments, at least one of the first light-emitting element
120, the second light-emitting element 130 and the third light-emitting element 140
includes an ultraviolet light-emitting diode (UV LED), but the present disclosure
is not limited thereto.
[0014] Referring to FIG. 1, the first light-emitting element 120 includes a semiconductor
layer 121, a light-emitting layer 122, a semiconductor layer 123, and a light-transmitting
layer 124. In this embodiment, the semiconductor layer 121 and the semiconductor layer
123 may include gallium nitride (GaN) or any other suitable semiconductor materials,
but they are not limited thereto. In some embodiments, the semiconductor layer 121
and the semiconductor layer 123 may include different types of semiconductor materials.
For example, the semiconductor layer 121 may be a p-type semiconductor layer, the
semiconductor layer 123 may be an n-type semiconductor layer, but they are not limited
thereto. The light-emitting layer 122 is disposed between the semiconductor layer
121 and the semiconductor layer 123. The light-emitting layer 122 may include, a homojunction,
a heterojunction, a single-quantum well (SQW), a multiple-quantum well (MQW), any
other suitable structure or a combination thereof, but it is not limited thereto.
The light-emitting layer 122 may emit blue light, but it is not limited thereto. In
this embodiment, the light-transmitting layer 124 is disposed on the semiconductor
layer 123, the light emitted by the light-emitting layer 122 may be irradiated to
the outside through the light-transmitting layer 124.
[0015] The semiconductor layer 121 may be connected to and/or electrically connected to
the substrate 110 through an ohmic contact electrode 161 and a conductive pad 151.
In this embodiment, the conductive pad 151 and the semiconductor layer 121 may completely
cover the ohmic contact electrode 161. In other words, the conductive pad 151 may
be in contact with the semiconductor layer 121, and the first light-emitting element
120 may be disposed on the substrate 110 more stably. For example, the ohmic contact
electrode 161 may include indium tin oxide (ITO), silver (Ag), nickel (Ni), gold (Au),
platinum (Pt), gold beryllium alloy (AuBe), gold germanium Alloy (AuGe), chromium
(Cr) or any other suitable conductive material.
[0016] In addition, the second light-emitting element 130 may have a structure similar to
the first light-emitting element 120. For example, the second light-emitting element
130 includes a semiconductor layer 131, a light-emitting layer 132, a semiconductor
layer 133, and a color conversion layer 134. In this embodiment, the light-emitting
layer 132 disposed between the semiconductor layer 131 and the semiconductor layer
133 emits blue light, the color conversion layer 134 is disposed on the semiconductor
layer 133 to convert the blue light into green light or red light. Similarly, the
semiconductor layer 131 may be connected to and/or electrically connected to the substrate
110 through an ohmic contact electrode 162 and a conductive pad 152. The third light-emitting
element 140 may have a structure similar to the second light-emitting element 130.
For example, the third light-emitting element 140 includes a semiconductor layer 141,
a light-emitting layer 142, a semiconductor layer 143 and/or a color conversion layer
144. In this embodiment, the color conversion layer 144 may convert blue light into
the other of green light or red light (which is different from the light converted
by the color conversion layer 134). Similarly, the semiconductor layer 141 may be
connected to and/or electrically connected to the substrate 110 through an ohmic contact
electrode 163 and a conductive pad 153.
[0017] In addition, in this embodiment, the semiconductor layer 123, the semiconductor layer
133 and the semiconductor layer 143 may be connected to and/or electrically connected
to the substrate 110 through an ohmic contact electrode 180 and a conductive pad 170.
In some embodiments, the dimensions of the ohmic contact electrode 180 and the conductive
pad 170 in the horizontal direction (the X-Y plane) are substantially the same, but
they are not limited thereto. In other embodiments, the dimensions of the ohmic contact
electrode 180 and the conductive pad 170 in the horizontal direction may be different
from each other. In addition, in some embodiments, the ohmic contact electrode 180
may be omitted. That is, the conductive pad 170 may be in direct contact with the
semiconductor layer 123, the semiconductor layer 133 and the semiconductor layer 143.
[0018] Fig. 2 is a top view illustrating the electronic device 100 shown in Fig. 1. When
the substrate 110 supplies the same amount of current to the first light-emitting
element 120, the second light-emitting element 130 and the third light-emitting element
140, the contact area (which is located on the X-Y plane) of the semiconductor layer
and the ohmic contact electrode can affect the current density supplied to the light-emitting
element. The contact area between the semiconductor layer and the ohmic contact electrode
has a negative correlation with the current density of the light-emitting element.
In other words, the larger the contact area between the semiconductor layer and the
ohmic contact electrode, the lower the current density of the light-emitting element.
In general, the light-emitting elements with higher light-emitting efficiency needs
to a lower current density (that is, the area where the ohmic contact electrode is
in contact with the semiconductor layer needs to be increased), but it is not limited
thereto. The relationship between the light-emitting efficiency of the light-emitting
element and the current density will be described in more detail below in accompany
with Fig. 12.
[0019] For example, in this embodiment, the light-emitting efficiency of the first light-emitting
element 120 is greater than the light-emitting efficiency of the second light-emitting
element 130, the light-emitting efficiency of the second light-emitting element 130
is greater than the light-emitting efficiency of the third light-emitting element
140. Therefore, the area of the ohmic contact electrode 161 connected to the first
light-emitting element 120 on the X-Y plane (contact with the semiconductor layer
121) is larger than the area of the ohmic contact electrode 162 connected to the second
light-emitting element 130 on the X-Y plane (contact with the semiconductor layer
131), and is even larger than the area of the ohmic contact electrode 163 that is
connected to the third light-emitting element 140 on the X-Y plane (contact with the
semiconductor layer 141). As such, the ratio of the area of the ohmic contact electrode
161 to the area of the semiconductor layer 121 is different from the ratio of the
area of the ohmic contact electrode 162 to the area of the semiconductor layer 131
and the ratio of the area of the ohmic contact electrode 163 to the area of the semiconductor
layer 141. For example, the ratio of the area of the ohmic contact electrode 161 to
the area of the semiconductor layer 121 is greater than the ratio of the area of the
ohmic contact electrode 162 to the area of the semiconductor layer 131, which is even
greater than the ratio of the area of the ohmic contact electrode 163 to the area
of the semiconductor layer 141, but it is not limited thereto.
[0020] It should be understood that the above relationship between the light-emitting efficiency
of the light-emitting element merely serves as an example. In fact, all the light-emitting
elements described in the present disclosure may have different light-emitting efficiency
from each other, and the aforementioned light-emitting efficiency may have arbitrary
combination of magnitude relationships. For example, in some embodiments, the light-emitting
efficiency of the first light-emitting element is less than the light-emitting efficiency
of the second light-emitting element, and the light-emitting efficiency of the second
light-emitting element is less than the light-emitting efficiency of the third light-emitting
element. Those skilled in the art may adjust the area of the ohmic contact electrode
in response to different combinations of magnitude relationships of light-emitting
efficiency based on the embodiments of the present disclosure. Unless defined otherwise,
in the following embodiments, the light-emitting efficiency of the first light-emitting
element is greater than the light-emitting efficiency of the second light-emitting
element, which is further greater than the light-emitting efficiency of the third
light-emitting element, and it will not be repeated again.
[0021] Fig. 3 is a cross-sectional view illustrating the electronic device 200 in accordance
with some embodiments of the present disclosure, and Fig. 4 is a top view illustrating
the electronic device 200 shown in Fig. 3. It should be noted that the electronic
device 200 may include the same or similar parts as the electronic device 100 shown
in Fig. 1 and 2, and the aforementioned same or similar parts will be labeled with
similar numerals. These parts will not be repeated again. For example, the electronic
device 200 includes a substrate 210 and a first light-emitting element 220, a second
light-emitting element 230, and a third light-emitting element 240 that are disposed
on the substrate 210. Semiconductor layers 221, 231, and 241 of the light-emitting
elements are connected to the substrate 210 via ohmic contact electrodes 261, 262,
263 and conductive pads 251, 252, 253.
[0022] The ohmic contact electrode 262 and the ohmic contact electrode 263 of the electronic
device 200 in this embodiment may be divided into a plurality of separate portions.
It should be understood that, in this embodiment, the area where the ohmic contact
electrode 262 contacts the semiconductor layer 231 is a sum of the areas of all the
portions of the ohmic contact electrode 262 on the X-Y plane. Similarly, the area
where the ohmic contact electrode 263 contacts the semiconductor layer 241 is a sum
of the areas of all the portions of the ohmic contact electrode 263 on the X-Y plane.
By designing the ohmic contact electrode 262 and the ohmic contact electrode 263 into
a plurality of separate parts, which can increase a flexibility or diversity in design
and/or manufacturing.
[0023] Fig. 5 is a cross-sectional view illustrating the electronic device in accordance
with some embodiments of the present disclosure. It should be noted that the electronic
device 300 in this embodiment may include the same or similar parts as the electronic
device 100 shown in FIG. 1 and FIG. 2, and the aforementioned same or similar parts
will be labeled as similar numerals. These parts will not be described in detail again.
For example, the electronic device 300 includes a substrate 310 and a first light-emitting
element 320, a second light-emitting element 330 and a third light-emitting element
340 that are disposed on the substrate 310. Semiconductor layers 321, 331 and 341
of the light-emitting elements are connected to the substrate 310 via ohmic contact
electrodes 361, 362, 363 and conductive pads 351, 352, 353.
[0024] The conductive pad 351, the conductive pad 352 and/or the conductive pad 353 of the
electronic device 300 in this embodiment are not completely covered by the ohmic contact
electrode 361, the ohmic contact electrode 362 and/or the ohmic contact electrode
363, respectively. When viewed along a side direction (e.g. the X direction and/or
the Y direction), the ohmic contact electrode 361, the ohmic contact electrode 362
and/or the ohmic contact electrode 363 are exposed from the conductive pad 351, the
conductive pad 352 and the conductive pad 353, respectively. In this embodiment, the
light-emitting efficiency of the third light-emitting element 340 is greater than
the light-emitting efficiency of the second light-emitting element 330, the light-emitting
efficiency of the second light-emitting element 330 is greater than the light-emitting
efficiency of the first light-emitting element 320. Therefore, the area of the ohmic
contact electrode 363 connected to the third light-emitting element 340 on the X-Y
plane (contact with the semiconductor layer 341) is larger than the area of the ohmic
contact electrode 362 connected to the second light-emitting element 330 on the X-Y
plane (contact with the semiconductor layer 331), and the area of the ohmic contact
electrode 363 connected to the third light-emitting element 340 on the X-Y plane is
even larger than the area of the ohmic contact electrode 361 connected to the first
light-emitting element 320 on the X-Y plane (contact with the semiconductor layer
321).
[0025] In addition, in this embodiment, the area of the conductive pad 351 on the X-Y plane
is larger than the area of the ohmic contact electrode 361 on the X-Y plane. The area
of the conductive pad 352 on the X-Y plane is substantially equal to the area of the
ohmic contact electrode 362 on the X-Y plane. The area of the conductive pad 353 on
the X-Y plane is smaller than the area of the ohmic contact electrode 363 on the X-Y
plane. The present disclosure is not limited thereto. Those skilled in the art may
arbitrarily adjust the area relationship between the conductive pad 351 and the ohmic
contact electrode 361, between the conductive pad 352 and the ohmic contact electrode
362, or between the conductive pad 353 and the ohmic contact electrode 363 as required.
Similarly, the area relationship between the conductive pad and the ohmic contact
electrode described above may also adopt any combination of the conductive pad and
the ohmic contact electrode described in the present disclosure, and it will not be
described in detail below.
[0026] Fig. 6 is a cross-sectional view illustrating the electronic device in accordance
with some embodiments of the present disclosure. It should be noted that the electronic
device 400 in this embodiment may include the same or similar parts as the electronic
device 100 shown in Fig. 1 and 2, and the aforementioned same or similar parts will
be labeled with similar numerals. These parts will not be described in detail again.
For example, the electronic device 400 includes a substrate 410 and a first light-emitting
element 420, a second light-emitting element 430 and a third light-emitting element
440 that are disposed on the substrate 410. Semiconductor layers 421, 431 and 441
of the light-emitting elements are each connected to the substrate 410 via ohmic contact
electrodes 461, 462, 463 and/or conductive pads 451, 452, 453. In addition, Semiconductor
layers 423, 433, and 443 of the light-emitting elements are connected to the substrate
410 via ohmic contact electrodes 481, 482, 483 and/or conductive pads 471, 472, 473,
respectively.
[0027] The first light-emitting element 420 of the electronic device 400 in this embodiment
includes an ultraviolet LED, and a color conversion layer 424 can be disposed on the
semiconductor layer 423 of the first light-emitting element 420. The light emitted
by the light-emitting layer 422 is converted into blue light and irradiated to the
outside. Similarly, the second light-emitting element 430 and the third light-emitting
element 440 may include ultraviolet LEDs, and the second light-emitting element 430
and the third light-emitting element 440 are provided with a color conversion layer
434 and a color conversion layer 444, respectively. The light emitted from the light-emitting
layer 432 and the light-emitting layer 442 is converted into green light or red light
and irradiated to the outside. In addition, in this embodiment, the sizes of the ohmic
contact electrode 481, the ohmic contact electrode 482 and the ohmic contact electrode
483 on the X-Y plane are not uniform. As shown in Fig. 6, the ohmic contact electrode
481, the ohmic contact electrode 482 and the ohmic contact electrode 483 may have
an area relationship similar to that of the ohmic contact electrode 461, the ohmic
contact electrode 462 and the ohmic contact electrode 463. That is, on the X-Y plane,
the area of the ohmic contact electrode 481 is larger than the area of the ohmic contact
electrode 482, the area of the ohmic contact electrode 482 is larger than the area
of the ohmic contact electrode 483, but the present disclosure is not limited thereto.
[0028] Fig. 7 is a cross-sectional view illustrating the electronic device in accordance
with some embodiments of the present disclosure. It should be noted that the electronic
device 500 in this embodiment may include the same or similar parts as the electronic
device 100 shown in Fig. 1 and Fig. 2. The same or similar parts will be denoted by
similar numerals, and will not be described in detail again. For example, the electronic
device 500 includes a substrate 510 and a first light-emitting element 520, a second
light-emitting element 530 and a third light-emitting element 540 that are disposed
on the substrate 510. Semiconductor layers 521, 531 and 541 of the light-emitting
elements are each connected to the substrate 510 via ohmic contact electrodes 561,
562, 563 and conductive pads 551, 552, 553.
[0029] In this embodiment, the first light-emitting element 520 of the electronic device
500 includes a blue LED, the second light-emitting element 530 includes a green LED,
and the third light-emitting element 540 includes a red LED. For example, the semiconductor
layer 531 and the semiconductor layer 533 of the second light-emitting element 530
include gallium nitride or any other suitable semiconductor material, but they are
not limited thereto. The semiconductor layer 541 and the semiconductor layer 543 of
the third light-emitting element 540 include aluminum gallium indium phosphide (AlGaInP)
or any other suitable semiconductor material, but they are not limited thereto. Since
the above light-emitting elements may directly emit blue, green or red light, it is
not necessary to provide a light-transmitting layer and/or a color conversion layer
in this embodiment, and thereby simplifying the manufacturing process of the electronic
device 500.
[0030] Fig. 8 is a cross-sectional view illustrating the electronic device in accordance
with some embodiments of the present disclosure. It should be noted that the electronic
device 600 may include the same or similar parts as the electronic device 100 shown
in Fig. 1 and Fig. 2. The same or similar parts will be labeled with similar numerals,
and will not be described in detail again. For example, the electronic device 600
includes a substrate 611 and a first light-emitting element 620, a second light-emitting
element 630, a third light-emitting element 640 that are disposed on the substrate
611. The first light-emitting element 620, the second light-emitting element 630 and
the third light-emitting element 640 of the electronic device 600 in this embodiment
may be covered by the protective layer 651 to reduce the chance that the light-emitting
elements are damaged due to external force.
[0031] In addition, the electronic device 600 further includes a substrate 612 disposed
opposite to the substrate 611. On the substrate 612, a light-transmitting layer 661
is disposed corresponding to the first light-emitting element 620, a color conversion
layer 662 is disposed corresponding to the second light-emitting element 630, and
a color conversion layer 663 is disposed corresponding to the third light-emitting
element 640. In this embodiment, a light-shielding layer 670 is disposed between the
light-transmitting layer 661 and the color conversion layer 662, and between the color
conversion layer 662 and the color conversion layer 663 to reduce the mixing of light
from different light-emitting units with each other, which may affect the performance
of the electronic device 600. A protective layer 653 is disposed under the light-transmitting
layer 661, the color conversion layer 662, the color conversion layer 663 and the
light-shielding layer 670 for reducing the damage of the layers due to external forces.
The protective layer 651 and the protective layer 653 may be bonded via the adhesive
layer 652, and therefore bonding the substrate 612 to the substrate 611.
[0032] Fig. 9 is a cross-sectional view illustrating the electronic device in accordance
with some embodiments of the present disclosure. It should be noted that the electronic
device 700 in this embodiment may include the same or similar parts as the electronic
device 600 shown in Fig. 6, and the aforementioned same or similar parts will be labeled
with similar numerals and will not be described in detail again. For example, the
electronic device 700 includes a substrate 711 and a substrate 712 that are opposite
to each other. A first light-emitting element 720, a second light-emitting element
730 and a third light-emitting element 740 are disposed on the substrate 711. A color
conversion layer 761, a color conversion layer 762, a color conversion layer 763 and
a light shielding layer 770 are disposed on the substrate 712.
[0033] In this embodiment, the first light-emitting element 720 of the electronic device
700 includes an ultraviolet LED. Therefore, a corresponding color conversion layer
761 can be disposed on the first light-emitting element 720, the light emitted by
the first light-emitting element 720 is converted into blue light and irradiated to
the outside. Similarly, the second light-emitting element 730 and the third light-emitting
element 740 may include ultraviolet LEDs, the second light-emitting element 730 and
the third light-emitting element 740 may be provided with corresponding color conversion
layers 762 and 763 to convert the emitted light to green light or red light. It should
be understood that, for the sake of brevity, the size relationship between different
ohmic contact electrodes is not specifically described in the embodiments shown in
Fig. 8 and Fig. 9, but those skilled in the art may appropriately arrange the ohmic
contact electrodes based on other embodiments in the present disclosure.
[0034] Fig. 10 is a cross-sectional view illustrating the electronic device in accordance
with some embodiments of the present disclosure. It should be noted that the electronic
device 800 in this embodiment may include the same or similar parts as the electronic
device 100 shown in Fig. 1 and 2. The aforementioned same or similar parts will be
labeled with similar numerals and will not be described in detail again. For example,
the electronic device 800 includes a substrate 811 and a first light-emitting element
820, a second light-emitting element 830, a third light-emitting element 840 that
are disposed on the substrate 811, and the foregoing light-emitting elements are each
connected to the substrate 811 via ohmic contact electrodes 861, 862, 863 and conductive
pads 851, 852, 853.
[0035] The electronic device 800 in this embodiment further includes a substrate 812, disposed
opposite to the substrate 811. In the present embodiment, the first light-emitting
element 820, the second light-emitting element 830 and the third light-emitting element
840 are connected to the substrate 812 via conductive pads 870. The substrate 812
may protect the first light-emitting element 820, the second light-emitting element
830 and the third light-emitting element 840.
[0036] Fig. 11 is a cross-sectional view illustrating a conductive pad 880 in accordance
with some embodiments of the present disclosure. As shown in FIG. 11, the conductive
pad 880 includes a bonding layer 881, a barrier layer 882 and an adhesive layer 883
sequentially stacked. In some embodiments, the bonding layer 881 is disposed on the
substrate. The barrier layer 882 is disposed on the bonding layer 881. The adhesive
layer 883 is disposed on the barrier layer 882 and is in contact with the ohmic contact
electrode. For example, the bonding layer 881 may include copper (Cu), gold (Au),
silver (Ag), tin (Sn), indium (In), other suitable metal materials or a combination
thereof, but it is not limited thereto. The barrier layer 882 may include nickel (Ni),
platinum (Pt), other suitable metal materials or a combination thereof, but it is
not limited thereto. The adhesive layer 883 may include chromium (Cr), titanium (Ti),
other suitable metal materials or a combination thereof, but it is not limited thereto.
It should be understood that the conductive pad 880 in this embodiment can be applied
to the conductive pads in all the above embodiments, but it is not limited thereto.
[0037] Fig. 12 is a schematic diagram illustrating the relationship between the light-emitting
efficiency and the current density in accordance with some other embodiments of the
present disclosure. As shown in FIG. 12, A graph 900 shows lines 901, 902 and 903.
The line 901 may include blue light, the line 902 may include green light, the line
903 may include red light, but they are not limited thereto. The lines 901, 902 and
903 each indicate the relationship between the light-emitting efficiency and the current
density of different light-emitting elements. The vertical axis of the graph 900 indicates
the light-emitting efficiency (%), and the horizontal axis indicates the current density
(A/cm
2). In order to make the light-emitting efficiency of each light-emitting element uniform,
the current density required for each light-emitting element to reach the target light-emitting
efficiency can be obtained from graph 900. Then, the size of the ohmic contact electrode
may be adjusted according to the current density value shown in the graph 900. It
should be understood that the relationship between the light-emitting efficiency and
the current density shown in the graph 900 merely serves as an example. The present
disclosure is not limited thereto. In other embodiments, the relationship between
the light-emitting efficiency and the current density of the light-emitting element
may be different from the relationship shown by the lines 901, 902 and 903.
[0038] As set forth above, some embodiments of the present disclosure provide an electronic
device having ohmic contact electrodes with different sizes. The sizes of the ohmic
contact electrodes may be adjusted, such that the light-emitting efficiencies of the
light-emitting elements tend to be uniform. As a result, white color balance may be
achieved without the complicated manufacturing process for the light-emitting elements.
[0039] While the embodiments and the advantages of the present disclosure have been described
above, it should be understood that those skilled in the art may make various changes,
substitutions, and alterations to the present disclosure without departing from the
spirit and scope of the present disclosure. It should be noted that different embodiments
in the present disclosure may be arbitrarily combined as other embodiments as long
as the combination conforms to the spirit of the present disclosure. In addition,
the scope of the present disclosure is not limited to the processes, machines, manufacture,
composition, devices, methods and steps in the specific embodiments described in the
specification. Those skilled in the art may understand existing or developing processes,
machines, manufacture, compositions, devices, methods and steps from some embodiments
of the present disclosure. Therefore, the scope of the present disclosure includes
the aforementioned processes, machines, manufacture, composition, devices, methods,
and steps. Furthermore, each of the appended claims constructs an individual embodiment,
and the scope of the present disclosure also includes every combination of the appended
claims and embodiments.
1. An electronic device (100,200,300,400,500,600,700,800,900), comprising:
a substrate (110,210,310,410,510,611,711,811);
a first light-emitting element (120,220,320,420,520,620,720,820) disposed on the substrate
and configured to emit a first color light under a first current density when the
substrate provides a first current to the first light-emitting element; and
a second light-emitting element (130,230,330,430,530,630,730,830) disposed on the
substrate and configured to emit a second color light under a second current density
when the substrate provides a second current to the second light-emitting element,
wherein the first current is equal to the second current, and the first current density
is different from the second current density.
2. The electronic device as claimed in claim 1, wherein the first light-emitting element
(120,220,320,420,520,620,720,820) comprises a first ohmic contact electrode (161,261,361,461,561,861),
and the first current density is defined by a ratio of the first current and an area
of the first ohmic contact electrode.
3. The electronic device as claimed in claim 2, wherein the second light-emitting element
comprises a second ohmic contact electrode (162,262,362,462,562,862), and the second
current density is defined by a ratio of the second current and an area of the second
ohmic contact electrode, and/or
wherein the area of the first ohmic contact electrode is different from the area of
the second ohmic contact electrode.
4. The electronic device as claimed in any of claims 1 to 3, wherein the first color
light is a blue light, the second color light is a green light or a red light, and
the first current density is less than the second current density.
5. The electronic device as claimed in any of claims 1 to 4, further comprising a third
light-emitting element (140,240,340,440,540,640,740,840) disposed on the substrate
(110,210,310,410,510,611,711,811) and configured to emit a third color light under
a third current density when the substrate provides a third current to the third light-emitting
element, wherein the third current is equal to the first current, and the third current
density is different from the first current density and the second current density.
6. The electronic device as claimed in claim 5, wherein the third light-emitting element
comprises a third ohmic contact electrode (163,263,363,463,563,863), and the third
current density is defined by a ratio of the third current and an area of the third
ohmic contact electrode, and/or
wherein the area of the first ohmic contact electrode (161,261,361,461,561,861) is
different from the area of the third ohmic contact electrode.
7. An electronic device (100,200,300,400,500,600,700,800,900), comprising:
a substrate (110,210,310,410,510,611,711,811);
a first light-emitting element (120,220,320,420,520,620,720,820) disposed on the substrate
and configured to emit a first color light, wherein the first light-emitting element
comprises a first semiconductor layer (121,221,321,421,521) and a first ohmic contact
electrode (161,261,361,461,561,861) in contact with the first semiconductor layer;
and
a second light-emitting element (130,230,330,430,530,630,730,830) disposed on the
substrate and configured to emit a second color light, wherein the second light-emitting
element comprises a second semiconductor layer (131,231,331,431,531) and a second
ohmic contact electrode (162,262,362,462,562,862) in contact with the second semiconductor
layer,
wherein a first ratio of an area of the first ohmic contact electrode and an area
of the first semiconductor layer is different from a second ratio of an area of the
second ohmic contact electrode and an area of the second semiconductor layer.
8. The electronic device as claimed in claim 7, wherein the area of the first semiconductor
layer (121,221,321,421,521) is the same as the area of the second semiconductor layer
(131,231,331,431,531).
9. The electronic device as claimed in any of claims 7 and 8, wherein the first semiconductor
layer (121,221,321,421,521) and the second semiconductor layer (131,231,331,431,531)
are semiconductor layers of the same type.
10. The electronic device as claimed in any of claims 7 to 9, wherein the second light-emitting
element further comprises a color conversion layer (134,234,334,434) located on the
second semiconductor layer.
11. The electronic device as claimed in any of claims 7 to 10, wherein the first color
light is a blue light, the second color light is a green light or a red light, and
the first ratio is greater than the second ratio.
12. The electronic device as claimed in any of claims 7 to 11, wherein the first light-emitting
element further comprises a conductive pad (151,251,351,451,551,851) electrically
connected to the first ohmic contact electrode (161,261,361,461,561,861) and the substrate
(110,210,310,410,510,611,711,811).
13. The electronic device as claimed in any of claims 7 to 12, further comprising a third
light-emitting element (140,240,340,440,540,640,740,840) disposed on the substrate
and configured to emit a third color light, wherein the third light-emitting element
comprises a third semiconductor layer (141,241,341,341,541) and a third ohmic contact
electrode (163,263,363,463,563,863) in contact with the third semiconductor layer,
and a third ratio of an area of the third ohmic contact electrode and an area of the
third semiconductor layer is different from the first ratio and the second ratio.
14. The electronic device as claimed in claim 13, wherein the area of the first semiconductor
layer (121,221,321,421,521) is the same as the area of the third semiconductor layer
(141,241,341,341,541), and/or
wherein the first semiconductor layer and the third semiconductor layer are semiconductor
layers of the same type, and/or
wherein the first color light is a blue light, the third color light is a green light
or a red light, and the first ratio is greater than the third ratio.
15. The electronic device as claimed in any of claims 7 to 14, wherein the first ohmic
contact electrode (261) or the second ohmic contact electrode (262) is divided into
a plurality of separate portions.