(19)
(11) EP 3 722 458 A8

(12) CORRECTED EUROPEAN PATENT APPLICATION
published in accordance with Art. 153(4) EPC

(15) Correction information:
Corrected version no 1 (W1 A1)

(48) Corrigendum issued on:
09.12.2020 Bulletin 2020/50

(43) Date of publication:
14.10.2020 Bulletin 2020/42

(21) Application number: 19836781.5

(22) Date of filing: 28.02.2019
(51) International Patent Classification (IPC): 
C23C 16/455(2006.01)
 B05B 13/00(2006.01)
(86) International application number:
PCT/JP2019/007750
(87) International publication number:
WO 2020/174643 (03.09.2020 Gazette 2020/36)
(84) Designated Contracting States:
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated Extension States:
BA ME
Designated Validation States:
KH MA MD TN

(71) Applicant: TOSHIBA MITSUBISHI-ELECTRIC INDUSTRIAL SYSTEMS CORPORATION
Chuo-ku Tokyo 104-0031 (JP)

(72) Inventors:
  • ORITA Hiroyuki
    Tokyo 1040031 (JP)
  • HIRAMATSU Takahiro
    Tokyo 1040031 (JP)
  • NAMITO Nobuyoshi
    Tokyo 1040031 (JP)
  • IWAO Yusuke
    Tokyo 1040031 (JP)

(74) Representative: Winter, Brandl, Fürniss, Hübner, Röss, Kaiser, Polte - Partnerschaft mbB 
Patent- und Rechtsanwaltskanzlei Alois-Steinecker-Straße 22
85354 Freising
85354 Freising (DE)

   


(54) FILM FORMING DEVICE


(57) The present invention has an object to provide a film forming apparatus that can form a thin film on a substrate and can enhance throughput of film forming treatment, without reducing film forming quality and a film forming rate. In the present invention, a heating chamber (H10) and a film forming chamber (F10) are disposed along a substrate conveyance path circle (M1). The heating chamber (H10) and the film forming chamber (F10) are disposed adjacently to each other. With a substrate conveying apparatus (8), a plurality of substrates (10) are simultaneously conveyed along the substrate conveyance path circle (M1), with a substrate rotation direction (R1) being a moving direction. After heating treatment of infrared radiation apparatuses (2, 4) in the heating chamber (H10) is performed for the substrates (10), mist spraying treatment of thin film forming nozzles (1L, 1H) in the film forming chamber (F10) is performed for the substrates (10). In this manner, a thin film is formed on each of a front surface and a back surface of the plurality of substrates (10).