Field of the invention
[0001] The invention is related to a dielectric barrier discharge (DBD) plasma reactor.
More specifically, the DBD plasma reactor according to the invention is a device suitable
for plasma-enhanced chemical vapor deposition (PECVD) of a coating, for example a
crystalline inorganic coating, on a substrate under atmospheric pressure conditions.
Examples of crystalline inorganic coatings are V
2O
5 and TiO
2.
[0002] The invention is also related to a method for performing PECVD. More precisely, a
PECVD method for forming a coating, for example a crystalline inorganic coating, on
a substrate under atmospheric pressure conditions.
Description of prior art
[0003] A known option for forming crystalline inorganic coatings is the use of a two-step
process wherein in a first step quasi-amorphous films are deposited followed by a
second annealing step. For the first step, a DBD plasma reactor operating at atmospheric
pressure and room temperature (e.g. 25°) can for example be used.
[0004] The DBD plasma reactor is a device that comprises a first electrode, a second electrode
separated from the first electrode, and a first dielectric layer located at least
partly between the first and the second electrode. A plasma area is formed between
the first and the second electrode and the substrate is placed in the plasma area.
A main gas and generally also a precursor under gaseous form, are introduced between
the two electrodes and a power supply is used to apply a voltage, generally an alternating
voltage, between the first electrode and the second electrode and create a plasma
in the plasma area.
[0005] After performing this first step of deposition of the coating to the substrate using
the DBD plasma reactor, an annealing process needs to be started, i.e. the substrate
needs to be heated after deposition until it reaches a sufficiently high temperature
for the coating to recrystallize and take a specific crystalline form.
[0006] However, a disadvantage of this approach is that the overall processing time is long
as the annealing step can take some hours before completion.
[0007] Alternatively, to avoid the annealing step, the substrate could be heated by resistive
heating during the deposition. However, this option is often hard to realize in real
experimental conditions, as most of the atmospheric plasma deposition is done using
high-frequency dielectric barrier discharge, typically in the 1kHz to 100 kHz range.
One of the problems is electrical interference between the heating circuit and the
plasma circuit, and a further difficulty is related to efficiently heating a substrate
when a dielectric is located between the substrate and the electrode. In practice,
when using resistive heating, the entire reactor with the electrodes and dielectric
is being heated resulting in high power consumption.
[0008] Hence, there is room for improving DBD plasma reactors for performing PECVD coating
on a substrate at atmospheric pressure.
Summary of the invention
[0009] It is an object of the present invention to provide a new and improved DBD plasma
reactor for performing PECVD of a coating, preferably of a crystalline inorganic coating,
on a substrate. A further object is to reduce the overall power consumption of the
DBD plasma reactor and reduce the overall processing time for forming the coating.
[0010] The present invention is defined in the appended independent claims. Preferred embodiments
are defined in the dependent claims.
[0011] According to a first aspect of the invention, a dielectric barrier discharge (DBD)
plasma reactor for plasma enhanced chemical vapor deposition of a coating on a substrate
under atmospheric pressure is provided.
[0012] The DBD plasma reactor comprises a first electrode having a first face and a second
face opposite to the first face, a second electrode having a third and a fourth face
opposite to the third face, the fourth face of the second electrode facing the second
face of the first electrode, and wherein the second electrode is separated from the
first electrode for forming a plasma area between the second face and the fourth face.
The DBD plasma reactor further comprises a first dielectric layer covering at least
partly the second face of the first electrode and a power supply configured to apply
a voltage between the first and second electrode.
[0013] The DBD plasma reactor is characterized in that the plasma reactor further comprises
an induction heating coil for heating by induction a substrate when placed in the
plasma area and/or for heating a susceptor by induction when placed in the plasma
area. The induction heating coil is located outside of the plasma area and the induction
heating coil comprises a plurality of windings winded around a central coil axis.
In some embodiments, the induction heating coil is for example located such that the
first face of the first electrode is facing the induction heating coil or the third
face of the second electrode is facing the induction heating coil.
[0014] The DBD plasma reactor is further characterized in that the first electrode and/or
second electrode comprises at least a through-hole extending along the central coil
axis.
[0015] Advantageously, by providing a through-hole extending along the central coil axis
of the induction heating coil, magnetic field lines generated along the coil axis
are passing through the through-hole for crossing the first electrode. In this way,
when the DBD plasma reactor is in operation, the heating of the first electrode by
induction is reduced and when a susceptor is placed on the first dielectric layer,
mainly the susceptor is heated by induction. Hence, overall power consumption for
heating the substrate is reduced.
[0016] In embodiments, the DBD plasma reactor further comprises, in addition to the first
dielectric layer, a second dielectric layer covering at least partly the fourth face
of the second electrode. Advantageously, with two dielectrics as claimed, the power
and formation of streamer discharges is limited.
[0017] In preferred embodiments, at least a central portion of the second face and a central
portion of the fourth face are planar and parallel. If for example the second face
is planar, this facilitates positioning a susceptor or a substrate on top of the dielectric
covering the second face.
[0018] In embodiments, the plurality of windings of the induction heating coil are forming
a helix-type coil extending along the central coil axis. Advantageously, magnetic
field lines are extending and concentrated along the central coil axis and are passing
through the through-hole in the first electrode.
[0019] In further embodiments comprising a helix-type coil, the first electrode comprises
a slit for suppressing Eddy currents generated in the first electrode. In some embodiments,
the slit is extending from an inner perimeter delimiting the through-hole of the first
electrode to an outer perimeter of the first electrode. Advantageously, closed circuits
of Eddy currents formed in a plane of the first electrode are broken such that heating
of the electrode by Eddy currents is avoided. In some embodiments, the slit is not
entirely extending from the inner perimeter to the outer perimeter, but is only extending
over a limited distance.
[0020] In other embodiments, the plurality of windings of the induction heating coil are
located in a plane for forming a pancake-type coil. Preferably, when using a pancake-type
coil, the ratio between a thickness of the first electrode and a skin depth of the
first electrode is smaller than 1, preferably smaller than 0.5, more preferably smaller
than0.1. In this way, induction heating of the first electrode is strongly reduced.
[0021] Similarly, in embodiments, the ratio between a thickness (S) of the second electrode
and a skin depth (δ) of the second electrode is smaller than 1, preferably smaller
than 0.5, more preferably smaller than 0.1. In further embodiments, both the first
and second electrode fulfill this condition.
[0022] In preferred embodiments, the induction heating coil comprises a magnetic core, preferably
a ferrite core.
[0023] Preferably, the coating is a crystalline inorganic coating, more preferably comprising
a transition metal oxide. Indeed, the DBD plasma reactor is especially suited for
crystalline coating, such as for example V
2O
5 and TiO
2, that is performed at atmospheric pressure and room temperature. As during the coating
with the DBD plasma reactor according to the invention, the substrate is directly
or indirectly heated by the induction heating coil, no additional step of annealing
is needed.
[0024] In embodiments, the DBD plasma reactor comprises a gas injection system configured
to introduce a gas into the plasma area. In particular embodiments, a precursor in
a gaseous form is also injected in the plasma area by the gas injection system.
[0025] In preferred embodiments, the DBD plasma reactor comprises a susceptor, generally
arranged on the first dielectric layer.
[0026] A susceptor is to be construed as a piece of material, such as a layer or plate of
material configured such that the substrate can be arranged on the susceptor for forming
a thermal contact between the susceptor and the substrate.
[0027] Advantageously, when the DBD plasma reactor is in operation, the susceptor is heated
by induction by the induction heating coil and a substrate in thermal contact with
the susceptor will be heated by thermal conduction.
[0028] Preferably, the susceptor is made of a metal, more preferably the susceptor is made
of a ferromagnetic metal or a ferromagnetic alloy.
[0029] In embodiments, the central coil axis of the induction heating coil is crossing the
susceptor.
[0030] According to a second aspect of the invention, a method for forming a coating, preferably
a crystalline inorganic coating, on a substrate using PECVD under atmospheric pressure
conditions is provided as defined in the appended claims.
Short description of the drawings
[0031] These and further aspects of the invention will be explained in greater detail by
way of example and with reference to the accompanying drawings in which:
- Fig.1a to Fig.1d
- schematically illustrates cross sectional views of examples of embodiments of DBD
plasma reactors according to the invention comprising one dielectric layer;
- Fig.2a to Fig.2c
- schematically illustrates cross sectional views of examples of embodiments of DBD
plasma reactors according to the invention comprising two dielectric layers;
- Fig.3a and Fig.3b
- schematically illustrate the induction of Eddy currents in a metal plate for two different
magnetic field orientations;
- Fig.4a
- is a cross sectional view of an induction heating coil, an electrode and a dielectric
layer of a DBD plasma reactor according to the invention;
- Fig.4b
- is a top view of the electrode shown in Fig.4a;
- Fig.5
- is a perspective view of an example of an electrode having a slit and a through-hole;
- Fig.6
- is a cross sectional view of an example of a pancake-type coil shown in combination
with an electrode and a dielectric layer;
- Fig.7
- is a cross section view of an example of a pancake-type coil comprising a magnetic
core;
- Fig.8.
- is a perspective view of an example of pancake type coil having a magnetic core;
[0032] The figures are not drawn to scale. Generally, identical components are denoted by
the same reference numerals in the figures.
Detailed description of preferred embodiments
[0033] The present disclosure will be described in terms of specific embodiments, which
are illustrative of the disclosure and not to be construed as limiting. It will be
appreciated by persons skilled in the art that the present disclosure is not limited
by what has been particularly shown and/or described and that alternatives or modified
embodiments could be developed in the light of the overall teaching of this disclosure.
The drawings described are only schematic and are non-limiting.
[0034] Use of the verb "to comprise", as well as the respective conjugations, does not exclude
the presence of elements other than those stated.
[0035] Use of the article "a", "an" or "the" preceding an element does not exclude the presence
of a plurality of such elements.
[0036] Furthermore, the terms first, second and the like in the description and in the claims,
are used for distinguishing between similar elements and not necessarily for describing
a sequence, either temporally, spatially, in ranking or in any other manner. It is
to be understood that the terms so used are interchangeable under appropriate circumstances
and that the embodiments of the disclosure described herein are capable of operation
in other sequences than described or illustrated herein.
DBD plasma reactor, general
[0037] In Fig.1a to Fig.1d and Fig.2a to Fig.2c, examples of embodiments of dielectric barrier
discharge (DBD) plasma reactors 1 for plasma enhanced chemical vapor deposition of
a coating on a substrate under atmospheric pressure according to the present invention
are shown.
[0038] Such a DBD plasma reactor 1 comprises a first electrode 11 separated from a second
electrode 12. The first electrode 11 has a first face 11a and a second face 11b opposite
to the first face 11a, and the second electrode 12 has a third 12a and a fourth face
12b, opposite to the third face. As schematically shown on Fig.1a to Fig.1c, Fig.2a
and Fig.2b, the fourth face 12b of the second electrode is facing the second face
11b of the first electrode. By separating the first and second electrode, a plasma
area 62 between the second face 11b and the fourth face 12b is formed, as illustrated
with a dotted area on the figures mentioned above.
[0039] The first electrode is for example a ground electrode and the second electrode is
a high-voltage electrode and a voltage can be applied between the first and second
electrode with a power supply 30. In some embodiments, the voltage applied between
the first and the second electrode is a direct pulsed voltage. Preferably, the electrodes
are made of a good conducting material, such as for example copper or aluminum.
[0040] The fact that the second face 11b and the fourth face 12b are facing each other does
not imply that no other elements are placed between the two faces. As further explained
below, depending on the specific embodiment, between the second face 11b and the fourth
face 12b one or more dielectric layers or additionally a susceptor can for example
be placed.
[0041] The DBD plasma reactor 1 shown on Fig.1a and Fig.1b comprises a first dielectric
layer 21 covering at least partly the second face 11b of the first electrode.
[0042] The DBD plasma reactor according to the invention is characterized in that it comprises
an induction heating coil 40 for heating by induction a substrate when placed in the
plasma area 62 and/or for heating a susceptor by induction when placed in the plasma
area 62. In Fig.1a to Fig.1c, Fig.2a and Fig.2b, reference 100 schematically illustrates
a susceptor that is located on top of the first dielectric layer 21. In other embodiments,
the substrate is directly positioned on the first dielectric layer 21 without use
of a susceptor.
[0043] The induction heating coil is located outside of the plasma area. In the embodiment
shown on Fig.1a and Fig.2a, the first face 11a of the first electrode is facing the
inducting heating coil 40. In other words, in these examples, the induction heating
coil 40 is placed under the first electrode. In other embodiments, as for example
shown on Fig.1b, Fig.1c and Fig.2b, the induction heating coil is placed on top of
the second electrode. In these examples, the third face 12a of the second electrode
is facing the induction heating coil 40.
[0044] The induction heating coil 40 is a coil comprising a plurality of windings winded
around a central coil axis X
B. Various embodiments of an induction heating coil will be further discussed below.
The induction heating coil is powered by a power supply 50 for providing an alternating
current in the coil, typically at a frequency in the kHz range, for example a frequency
in range between 1 kHz and 100 kHz.
[0045] The DBD reactor according to the present invention is not limited to embodiments
having only one induction heating coil. Indeed, in some embodiments the DBD reactor
comprises more than one induction heating coil. For example, as schematically illustrated
on Fig.1d and Fig.2c, two induction heating coils 40a and 40b are provided having
a common central axis X
B.
[0046] The DBD plasma reactor according the invention is further characterized in that the
first electrode 11 and/or the second electrode 12 comprises a through-hole 15 extending
along the central coil axis X
B. In Fig.1a and Fig.2a, examples are shown of embodiments wherein the first electrode
comprises a through-hole while Fig.1b shows an example wherein the through-hole is
made in the second electrode. In Fig.1c and Fig.2b, examples of embodiments are shown
wherein both the first 11 and the second 12 electrode comprise a through-hole 15.
The role of the through-hole 15 will be further discussed.
[0047] The DBD plasma reactor of the current invention is not limited to one dielectric
layer. For example in Fig.2a and Fig.2b, embodiments of a reactor are shown comprising
a second dielectric layer 22 covering at least partly the fourth face 12b of the second
electrode 12.
[0048] The DBD plasma reactor is suitable to operate under atmospheric pressure, which is
to be construed as operating in pressure ranges between 100 torr and 1000 torr. Typically,
a DBD plasma reactor comprises a gas injection system configured to introduce gases
into the plasma area. For example a main gas, such as e.g. argon, or helium or any
other noble gas, can be introduced in the plasma area. The word "main gas" is used
in order to distinguish the noble gas from other additional gases that could be introduced
in the plasma area. Indeed, in some embodiments, besides the main gas, also a precursor
under gaseous form is introduced into the plasma area. In some embodiments, as schematically
illustrated on Fig.2a, a chamber 60 is used that is containing at least the first
electrode, the second electrode and the induction heating coil. For DBD plasma reactors
comprising a chamber, a gas inlet 61 is generally provided to supply gas to the chamber.
The arrow on Fig.2a schematically indicates a gas flow direction when entering the
chamber.
[0049] In other embodiments, no chamber is required when for example the DBD plasma reactor
is located in an atmospheric pressure controlled environment and wherein a gas can
directly be introduced in the plasma area.
[0050] The power supply 30 for the electrodes is commercially available and is for example
supplying an alternating voltage, e.g. generating an alternating voltage in the kHz
range, for example a frequency between 1 and 30 kHz. In other embodiments, the power
supply provides a pulsed DC voltage.
[0051] In the embodiment illustrated on Fig.1a, a central portion of the first electrode
11 and a central portion of the second electrode 12 are planar and parallel. In other
embodiments, the electrodes do not necessarily have portions that are planar and/or
parallel. In further embodiments, the second face of the first electrode and the fourth
face of the second electrode are planar and/or parallel.
[0052] Preferably, the first and/or second electrode is/are made of non-magnetic metals.
[0053] The goal of using an induction heating coil as mentioned above is to heat the substrate
and/or susceptor and not to heat the electrode. Indeed, it is well known that Eddy
currents induced in a metal by a varying magnetic field can heat the metal. This is
schematically illustrated on Fig.3a and Fig.3b, where two exemplary orientations of
a magnetic field generated by an induction coil with respect to a metal plate 90 are
shown. In Fig.3a, the magnetic field lines are crossing the metal plate 90 transversally,
resulting in Eddy currents, indicated by the reference "I" on the figure, flowing
in circles in the plane of the metal plate 90. On the other hand, for the configuration
shown in Fig.3b, the magnetic field lines pass through the metal plate longitudinally,
in a plane parallel with the metal plate. With the latter configuration, the induced
Eddy currents will flow through the thickness of the metal plate in small loops as
schematically illustrated on Fig.3b. The skin depth δ, being the thickness used by
the current to flow, also plays a role when designing the first electrode and/or the
susceptor as will be further explained below. The equation defining the skin depth
is well known in the art and the skin depth δ depends on the frequency of the varying
magnetic field inducing the Eddy currents and on the electrical conductivity and magnetic
permeability of the material wherein the Eddy currents are induced.
DBD plasma reactors with susceptor
[0054] In some embodiments, the DBD plasma reactor comprises a susceptor. Indeed, to achieve
a good heating of any kind of substrate, either metallic or non-metallic, it is preferred
to add a metallic component placed under the substrate that will be uniformly heated
by induction. This metallic component is called the "susceptor". This susceptor can
be made of any kind of metal, but a ferromagnetic metal like nickel or iron will be
far more susceptible to induction heating than a non-ferromagnetic metal like copper
or aluminum, due to the contribution of the magnetic permeability to the skin depth
and the hysteresis losses. The electric resistance of the conductor is also important
as a high resistance metal will heat faster than a low resistance metal due to Joule
effect. In induction heating, the skin effect is also an important factor for heating.
The susceptor will be a thin sheet or grid of ferromagnetic metal preferably with
high resistance. It should withstand a high temperature without oxidation, melting
or chemical modification. Suitable materials are Iron, Nickel, Cobalt and any other
ferromagnetic alloy with a high Curie temperature and with a reasonable resistance.
[0055] If the substrate is a conducting material, it is not absolutely necessary to use
an additional susceptor and the substrate can for example directly be placed on top
of the first dielectric layer for being heated by induction by the induction heating
coil.
Helix-type of induction coil
[0056] The induction heating coil 40 that is schematically shown on Fig.1a to Fig.1c, Fig.2a
and Fig.2b is a coil wherein the plurality of windings are forming a so-called helix-type
coil extending along the central coil axis X
B. This type of coil can also be named solenoid shaped coil. The windings are typically
made with Litz wire.
[0057] When such a helix-type coil is placed for example under the first electrode such
that the central coil axis is perpendicular to the first electrode, as shown on Fig.1a
and Fig.2a, the magnetic field lines are similar to the magnetic field lines shown
on Fig.3a, i.e. the magnetic field lines are crossing the first electrode in a direction
parallel with the central coil axis. If the first electrode would not have the through-hole
15, the first electrode would be heated by the induced Eddy currents circulating in
the first electrode. By providing the through-hole 15 in the first electrode, the
magnetic field lines are passing through the through-hole 15, thereby avoiding or
reducing induction heating in the first electrode. The person skilled in the art will
design the dimension of the opening of the through-hole 15 in accordance with the
dimension of the induction heating coil. If the through-hole has a circular opening,
the diameter can for example be chosen to be equal or slightly larger than an external
dimeter of a solenoid shaped coil used as induction coil, as schematically shown on
Fig.1a and Fig.2a.
[0058] The same reasoning can be made for a DBD reactor configuration wherein the induction
heating coil is placed on top of the second electrode and wherein the second electrode
comprise a through-hole, as shown on Fig.1b. In alternative embodiments, as shown
on Fig.1c and Fig.2b, to reduce the heating of both electrodes, a through-hole 15
is provided in each of the two electrodes.
[0059] Remark that the exact location of the induction heating coil outside the plasma area
is not important for the current invention, as long as the through-hole is extending
along the central coil axis of the induction heating coil.
[0060] Remark also that the dielectric layer 21 partially covering the first electrode is
not affecting the magnetic field lines as a dielectric is not a magnetic material.
In embodiments, in addition to the provision of the through-hole 15, the induction
current in the first electrode can be further reduced or eliminated by providing a
slit 14 in the electrode. In preferred embodiments, the slit 14 is extending from
an inner perimeter delimiting the through-hole 15 of the first electrode to an outer
perimeter of the first electrode 11. The slit brakes the closed electrical circuit
when formed in the first electrode such that no circular Eddy currents can circulate.
A slit 14 is schematically shown on Fig.4b for an embodiment wherein the through-hole
15 has a rounded square shape. The two crosses on Fig.4b schematically illustrate
that due to the slit 14 no Eddy currents I can circulate as the closed circuit is
broken by the slit 14.
[0061] In embodiments, as illustrated on Fig.4a, in order to better concentrate the magnetic
field in the center of the induction coil 40, i.e. concentrate the magnetic field
lines
B along the central coil axis, the induction heating coil 40 comprises a magnetic core
41, for example a ferrite core. In this particular embodiment, shown on Fig.4a, in
addition to the through-hole 15, additional holes 16,17 are made in the first electrode
11. The location of these additional holes match with corresponding components of
the magnetic core 41. The additional holes 16,17 are also shown on Fig.4b which is
a top view of the electrode shown on Fig.4a. This is further illustrated on Fig.5
where a perspective view is shown of the first electrode 11 and part of the ferrite
core 41 shown on Fig.4a.
Pancake-type of induction coil
[0062] In other embodiments, the DBD plasma reactor is using a pancake-type of induction
coil as schematically shown on Fig.6. In Fig.6, the first electrode 11, the first
dielectric layer 21 and the induction coil 40 of the pancake-type are shown. A pancake-type
of coil, also named flat coil, is a coil wherein the plurality of windings of the
coil around a central coil axis X
B are located in a plane. This type of pancake coil allows to generate longitudinal
field lines, similar to field lines shown on Fig.3b, in a susceptor arranged on the
first dielectric layer 21. However, the magnetic field lines of a pancake-type coil
are not completely longitudinal and in the center along the central coil axis X
B, the magnetic field lines are aligned in the direction of the central coil axis X
B and hence these transverse magnetic field lines have to cross through the first electrode
before reaching the susceptor. Therefore, for the same reasons as discussed above
for the helix-type coil, also for the pancake-type coil, a through-hole 15 extending
along the central common coil axis X
B is provided in the first electrode 11 in order to avoid or reduce Eddy currents in
the plane of the first electrode induced by a varying transverse magnetic field.
[0063] When a pancake-type coil is used as an induction coil, the heating of the first electrode
by Eddy currents resulting from the varying longitudinal magnetic field, as illustrated
on Fig.3b, can be strongly reduced or avoided by selecting the thickness S of the
first electrode in relation to the skin depth. Indeed, it is known, that if the ratio
S/δ between the thickness S of the conductor and the skin depth δ is below 2, the
power efficiency of the induction heating drops drastically. This is described in
for example the publication "
Induction heating of thin slabs and sheets in the rolling line", D. Wohlfahrt and
R. Jurgens, in 51st Internationales Wissenschaftliches Kolloquium Technische Universität
Ilmenau September 11 - 15, 2006. In other words, if the metal thickness of the first electrode is selected such that
the ratio S/δ is well below 2, the induction heating power is nearly zero and the
first electrode will not be heated up.
[0064] In embodiments, the ratio between the thickness S of the first electrode and the
skin depth δ of the first electrode is smaller than 1, preferably smaller than 0.5,
more preferably equal or smaller than 0.1.
[0065] The material selected for the first electrode is important as the material needs
to have on the one hand a good conductivity and on the other hand have a low magnetic
permeability. Indeed the electrode needs at the same time to be a good conductor for
the high voltage and also have a low ratio S/δ, preferably have a skin depth of for
example five times or ten time larger than the thickness S of the electrode. Usual
non-magnetic metals like copper, aluminum and silver have approximatively the same
skin depth and need to be 1 µm thick or thinner to avoid any induction heating with
100 kHz current frequency. Carbon graphite is a good alternative as it has an anisotropic
conductivity that reduces the skin depth to some millimeters but keeping a good conductivity.
[0066] In embodiments, as illustrated on Fig.7, the pancake-type of induction coil, also
comprises a magnetic core 41, e.g. made of ferrite or another magnetic material, configured
such that the magnetic field lines are bent and concentrated in the region where the
induction heating is needed, i.e. at the location where the susceptor and/or the substrate
are positioned. Magnetic fields lines
B resulting from the pancake-induction coil are schematically shown as dotted lines
on Fig.7.
Method for plasma-enhanced chemical vapor deposition
[0067] According to a further aspect of the invention, a method for plasma-enhanced chemical
vapor deposition of a coating on a substrate under atmospheric pressure using a dielectric
barrier discharge plasma reactor as discussed above is provided. Preferably the coating
is a crystalline inorganic coating. Generally, two methods can be distinguished, depending
on if the substrate is conductive or not.
[0068] As discussed above, if the substrate is conductive, it is not always necessarily
to use a susceptor. In that case, when the DBD plasma reactor does not comprise a
susceptor the method for plasma-enhanced chemical vapor deposition of a coating on
a substrate comprises steps of:
- placing a conductive substrate in the plasma area 62, preferably arranging the substrate
on the first dielectric layer,
- powering the induction heating coil 40 such that a varying magnetic field is generated
in the substrate and the substrate is heated by induction,
- introducing a main gas into the plasma area, preferably additionally introducing a
precursor under gaseous form in the plasma area,
- using the power supply 30 for applying a voltage, preferably an alternating voltage,
between the first electrode and the second electrode so as to generate a plasma in
the plasma area.
[0069] On the other hand, when the DBD plasma reactor comprises a susceptor as discussed
above, the method for plasma-enhanced chemical vapor deposition of a coating on a
substrate comprises steps of:
- placing a substrate on the susceptor 100 such that a thermal contact is made between
the susceptor and the substrate,
- powering the induction heating coil 40 such that a varying magnetic field is generated
in the susceptor 100 and the susceptor 100 is heated by induction,
- introducing a main gas into the plasma area, preferably additionally introducing a
precursor under gaseous form into the plasma area,
- using the power supply 30 for applying a voltage, preferably an alternating voltage,
between the first electrode and the second electrode so as to generate a plasma in
the plasma area.
[0070] The method according to the invention as described above and expressed in the appended
claims, is not limited by the order of the steps given, in embodiments steps can be
performed in a different order or some steps can be performed in parallel.
1. A dielectric barrier discharge plasma reactor (1) for plasma enhanced chemical vapor
deposition of a coating on a substrate under atmospheric pressure, comprising:
• a first electrode (11) having a first face (11a) and a second face (11b) opposite
to the first face (11a),
• a second electrode (12) having a third face (12a) and a fourth face (12b) opposite
to the third face, the fourth face (12b) of the second electrode facing the second
face (11b) of the first electrode, and wherein the second electrode is separated from
the first electrode (11) for forming a plasma area (62) between the second face (11b)
and the fourth face (12b),
• a first dielectric layer (21) covering at least partly the second face (11b) of
the first electrode,
• a power supply (30) configured to apply a voltage between the first and second electrode,
characterized in that
the reactor (1) further comprises an induction heating coil (40) for heating by induction
the substrate when placed in the plasma area (62) and/or for heating a susceptor by
induction when placed in the plasma area (62), said induction heating coil being located
outside of said plasma area, and wherein said induction heating coil (40) comprises
a plurality of windings (45) winded around a central coil axis (X
B),
and
in that said first electrode (11) and/or said second electrode (12) comprises a through-hole
(15) extending along said central coil axis (X
B).
2. A dielectric barrier discharge plasma reactor according to claim 1, further comprising
a second dielectric layer (22) covering at least partly said fourth face (12b) of
the second electrode.
3. A dielectric barrier discharge plasma reactor according to any of the previous claims,
wherein at least a central portion of said second face (11b) and a central portion
of said fourth face (12b) are planar and parallel.
4. A dielectric barrier discharge plasma reactor according to any of previous claims,
wherein said plurality of windings (45) of the induction heating coil (40) are forming
a helix-type coil extending along said central coil axis (XB).
5. A dielectric barrier discharge plasma reactor according to any of claims 1 to 3, wherein
said plurality of windings (45) of the induction heating coil (40) are located in
a plane so as to form a pancake-type coil.
6. A dielectric barrier discharge plasma reactor according to claim 5, wherein a ratio
between a thickness (S) of the first electrode and a skin depth (δ) of the first electrode
and/or a ratio between a thickness (S) of the second electrode and a skin depth (δ)
of the second electrode is smaller than 1, preferably smaller than 0.5, more preferably
equal or smaller than 0.1.
7. A dielectric barrier discharge plasma reactor according to any of the previous claims,
wherein said induction heating coil (40) comprises a magnetic core (41), preferably
a ferrite core.
8. A dielectric barrier discharge plasma reactor according to any of the previous claims,
wherein the first electrode (11) and/or second electrode (12) further comprises a
slit (14) for suppressing Eddy currents, preferably said slit is extending from an
inner perimeter delimiting the through-hole (15) of the electrode to an outer perimeter
of the electrode.
9. A dielectric barrier discharge plasma reactor according to any of the previous claims,
wherein said coating is a crystalline inorganic coating, preferably comprising a transition
metal oxide.
10. A dielectric barrier discharge plasma reactor according to any of the previous claims,
wherein the first and/or second electrode is/are made of non-magnetic metals.
11. A dielectric barrier discharge plasma reactor according to any of the previous claims,
further comprising a gas injection system configured to introduce a gas into the plasma
area.
12. A dielectric barrier discharge plasma reactor according to any of the previous claims,
further comprising a chamber containing at least the first electrode, the second electrode
and the first dielectric layer, preferably the chamber has a gas inlet (61).
13. A dielectric barrier discharge plasma reactor according to any of previous claims,
further comprising a susceptor (100) arranged on said first dielectric layer (21).
14. A method for plasma-enhanced chemical vapor deposition of a coating on a substrate
under atmospheric pressure using a dielectric barrier discharge plasma reactor according
to any of claims 1 to 13, said method comprising the steps of:
• placing the substrate on the first dielectric layer or placing a susceptor on the
first dielectric layer and placing the substrate on the susceptor (100) such that
a thermal contact is made between the susceptor and the substrate;
• powering the induction heating coil (40) such that a varying magnetic field is generated
in said substrate and/or said susceptor,
• introducing a main gas into the plasma area, preferably additionally introducing
a precursor under gaseous form in the plasma area,
• using the power supply (30) for applying a voltage, preferably an alternating voltage,
between the first electrode and the second electrode so as to generate a plasma in
the plasma area.
15. A method according to claim 14, wherein said coating is a crystalline inorganic coating,
preferably comprising a transition metal oxide.