|
(11) | EP 3 783 434 A8 |
(12) | CORRECTED EUROPEAN PATENT APPLICATION |
published in accordance with Art. 153(4) EPC |
|
|
|
|
|||||||||||||||||||||||||||
(54) | PHOTOSENSITIVE COMPOSITION FOR EUV LIGHT, PATTERN FORMATION METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE |
(57) Provided are a photosensitive composition for EUV light, which has a good Z-factor
and is capable of forming a pattern having a suppressed bridge defect, a pattern forming
method, and a method for manufacturing an electronic device. The photosensitive composition
for EUV light includes a predetermined resin and a photoacid generator, or includes
a predetermined resin having a repeating unit having a photoacid generating group,
and satisfies Requirements 1 to 3, Requirement 1: The A value determined by Formula (1) is 0.14 or more, Requirement 2: The concentration of solid contents in the photosensitive composition for EUV light is 5.0% by mass or less, Requirement 3: The content of the photoacid generator is 5% to 50% by mass with respect to the total solid content in the photosensitive composition for EUV light. |