(19)
(11) EP 3 783 434 A8

(12) CORRECTED EUROPEAN PATENT APPLICATION
published in accordance with Art. 153(4) EPC

(15) Correction information:
Corrected version no 1 (W1 A1)

(48) Corrigendum issued on:
14.04.2021 Bulletin 2021/15

(43) Date of publication:
24.02.2021 Bulletin 2021/08

(21) Application number: 19789468.6

(22) Date of filing: 12.04.2019
(51) International Patent Classification (IPC): 
G03F 7/004(2006.01)
G03F 7/039(2006.01)
G03F 7/012(2006.01)
G03F 7/20(2006.01)
(86) International application number:
PCT/JP2019/015910
(87) International publication number:
WO 2019/203140 (24.10.2019 Gazette 2019/43)
(84) Designated Contracting States:
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated Extension States:
BA ME
Designated Validation States:
KH MA MD TN

(30) Priority: 20.04.2018 JP 2018081359
26.03.2019 JP 2019058312

(71) Applicant: FUJIFILM Corporation
Tokyo 106-8620 (JP)

(72) Inventors:
  • SHIRAKAWA, Michihiro
    Haibara-gun, Shizuoka 421-0396 (JP)
  • FURUTANI, Hajime
    Haibara-gun, Shizuoka 421-0396 (JP)
  • OKA, Hironori
    Haibara-gun, Shizuoka 421-0396 (JP)

(74) Representative: Hoffmann Eitle 
Patent- und Rechtsanwälte PartmbB Arabellastraße 30
81925 München
81925 München (DE)

   


(54) PHOTOSENSITIVE COMPOSITION FOR EUV LIGHT, PATTERN FORMATION METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE


(57) Provided are a photosensitive composition for EUV light, which has a good Z-factor and is capable of forming a pattern having a suppressed bridge defect, a pattern forming method, and a method for manufacturing an electronic device. The photosensitive composition for EUV light includes a predetermined resin and a photoacid generator, or includes a predetermined resin having a repeating unit having a photoacid generating group, and satisfies Requirements 1 to 3,
Requirement 1: The A value determined by Formula (1) is 0.14 or more,


Requirement 2: The concentration of solid contents in the photosensitive composition for EUV light is 5.0% by mass or less,
Requirement 3: The content of the photoacid generator is 5% to 50% by mass with respect to the total solid content in the photosensitive composition for EUV light.