(19)
(11) EP 3 918 636 A1

(12)

(43) Date of publication:
08.12.2021 Bulletin 2021/49

(21) Application number: 20749178.8

(22) Date of filing: 28.01.2020
(51) International Patent Classification (IPC): 
H01L 29/778(2006.01)
H01L 29/40(2006.01)
H01L 29/417(2006.01)
 H01L 29/20(2006.01)
H01L 29/66(2006.01)
H01L 29/423(2006.01)
(52) Cooperative Patent Classification (CPC):
H01L 29/66; H01L 29/40; H01L 29/20; H01L 29/423; H01L 29/417; H01L 29/778
(86) International application number:
PCT/US2020/015331
(87) International publication number:
WO 2020/159934 (06.08.2020 Gazette 2020/32)
(84) Designated Contracting States:
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated Extension States:
BA ME
Designated Validation States:
KH MA MD TN

(30) Priority: 28.01.2019 US 201916260095
05.04.2019 US 201916376596

(71) Applicant: Cree, Inc.
Durham, NC 27703 (US)

(72) Inventors:
  • SRIRAM, Saptharishi
    Cary, NC 27513 (US)
  • SMITH, Thomas
    Raleigh, NC 27615 (US)
  • SUVOROV, Alexander
    Durham, NC 27713 (US)
  • HALLIN, Christer
    Hillsborough, NC 27278 (US)

(74) Representative: Isarpatent 
Patent- und Rechtsanwälte Barth Charles Hassa Peckmann & Partner mbB Friedrichstrasse 31
80801 München
80801 München (DE)

   


(54) GROUP III-NITRIDE HIGH-ELECTRON MOBILITY TRANSISTORS WITH BURIED P-TYPE LAYERS AND PROCESS FOR MAKING THE SAME