(19)
(11) EP 3 939 083 B8

(12) CORRECTED EUROPEAN PATENT SPECIFICATION
Note: Bibliography reflects the latest situation

(15) Correction information:
Corrected version no 1 (W1 B1)

(48) Corrigendum issued on:
17.07.2024 Bulletin 2024/29

(45) Mention of the grant of the patent:
12.06.2024 Bulletin 2024/24

(21) Application number: 20913066.5

(22) Date of filing: 07.07.2020
(51) International Patent Classification (IPC): 
H10B 41/27(2023.01)
H10B 43/27(2023.01)
H01L 25/18(2023.01)
H01L 23/00(2006.01)
 H10B 41/50(2023.01)
H10B 43/50(2023.01)
G11C 16/04(2006.01)
(52) Cooperative Patent Classification (CPC):
H10B 41/40; H10B 43/40; H10B 41/27; H10B 43/27; G11C 16/0483; H01L 24/08; H01L 24/80; H01L 25/18; H01L 2224/02372; H01L 2224/08145; H01L 2224/09181; H01L 2224/80357; H01L 2224/80895; H01L 2224/80896; H01L 2224/9202; H01L 2225/06541; H10B 41/50; H10B 43/50
 
C-Sets:
  1. H01L 2224/80895, H01L 2924/00014;
  2. H01L 2224/80896, H01L 2924/00014;
  3. H01L 2224/9202, H01L 2224/80001, H01L 2224/03;
(86) International application number:
PCT/CN2020/100561
(87) International publication number:
WO 2021/237883 (02.12.2021 Gazette 2021/48)

(54)

THREE-DIMENSIONAL MEMORY DEVICES

DREIDIMENSIONALE SPEICHERVORRICHTUNGEN

DISPOSITIFS DE MÉMOIRE TRIDIMENSIONNELS

(84) Designated Contracting States:
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

(30) Priority: 27.05.2020 WO PCT/CN2020/092499
27.05.2020 WO PCT/CN2020/092501
27.05.2020 WO PCT/CN2020/092504
27.05.2020 WO PCT/CN2020/092506
27.05.2020 WO PCT/CN2020/092512
27.05.2020 WO PCT/CN2020/092513

(43) Date of publication of application:
19.01.2022 Bulletin 2022/03

(73) Proprietor: Yangtze Memory Technologies Co., Ltd.
Wuhan, Hubei 430000 (CN)

(72) Inventor:
  • ZHANG, Kun
    Wuhan, Hubei 430000 (CN)

(74) Representative: Lippert Stachow Patentanwälte Rechtsanwälte 
Partnerschaft mbB Frankenforster Strasse 135-137
51427 Bergisch Gladbach
51427 Bergisch Gladbach (DE)


(56) References cited: : 
WO-A1-2021/207910
CN-A- 109 686 739
CN-A- 109 860 197
CN-A- 110 088 905
US-A1- 2020 105 781
 CN-A- 107 425 005
CN-A- 109 742 081
CN-A- 110 034 124
US-A1- 2016 336 338
   
  • JAEHOON JANG ET AL: "Vertical cell array using TCAT(Terabit Cell Array Transistor) technology for ultra high density NAND flash memory", VLSI TECHNOLOGY, 2009 SYMPOSIUM ON, IEEE, PISCATAWAY, NJ, USA, 16 June 2009 (2009-06-16), pages 192 - 193, XP031637355, ISBN: 978-1-4244-3308-7
   
Note: Within nine months from the publication of the mention of the grant of the European patent, any person may give notice to the European Patent Office of opposition to the European patent granted. Notice of opposition shall be filed in a written reasoned statement. It shall not be deemed to have been filed until the opposition fee has been paid. (Art. 99(1) European Patent Convention).