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<ep-patent-document id="EP20712591A1" file="20712591.5" lang="fr" country="EP" doc-number="3994722" kind="A1" date-publ="20220511" status="n" dtd-version="ep-patent-document-v1-5-1"><!-- This XML data has been generated under the supervision of the European Patent Office --><SDOBI lang="fr"><B000><eptags><B001EP>ATBECHDEDKESFRGBGRITLILUNLSEMCPTIESILTLVFIROMKCYALTRBGCZEEHUPLSKBAHRIS..MTNORSMESMMAKHTNMD..........</B001EP><B003EP>*</B003EP><B005EP>X</B005EP><B007EP>BDM Ver 2.0.15 (20th of December) -  1100000/0</B007EP></eptags></B000><B100><B110>3994722</B110><B130>A1</B130><B140><date>20220511</date></B140><B190>EP</B190></B100><B200><B210>20712591.5</B210><B220><date>20200325</date></B220><B240><B241><date>20211221</date></B241></B240><B250>fr</B250><B251EP>fr</B251EP><B260>fr</B260></B200><B300><B310>1907328</B310><B320><date>20190702</date></B320><B330><ctry>FR</ctry></B330></B300><B400><B405><date>20220511</date><bnum>202219</bnum></B405><B430><date>20220511</date><bnum>202219</bnum></B430></B400><B500><B510EP><classification-ipcr sequence="1"><text>H01L  21/762       20060101AFI20210115BHEP        </text></classification-ipcr></B510EP><B520EP><classifications-cpc><classification-cpc sequence="1"><text>H01L  21/76254     20130101 FI20191107BHEP        </text></classification-cpc></classifications-cpc></B520EP><B540><B541>de</B541><B542>HALBLEITERSTRUKTUR MIT EINER UNTERIRDISCHEN PORÖSEN SCHICHT FÜR HF-ANWENDUNGEN</B542><B541>en</B541><B542>SEMICONDUCTOR STRUCTURE COMPRISING AN UNDERGROUND POROUS LAYER, FOR RF APPLICATIONS</B542><B541>fr</B541><B542>STRUCTURE SEMI-CONDUCTRICE COMPRENANT UNE COUCHE POREUSE ENTERREE, POUR APPLICATIONS RF</B542></B540></B500><B700><B710><B711><snm>SOITEC</snm><iid>101848248</iid><irf>SOI124_EP</irf><adr><str>Parc Technologique des Fontaines 
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