(19)
(11) EP 4 139 964 A1

(12)

(43) Date of publication:
01.03.2023 Bulletin 2023/09

(21) Application number: 21737867.8

(22) Date of filing: 10.06.2021
(51) International Patent Classification (IPC): 
H01L 29/15(2006.01)
H01L 29/06(2006.01)
H01L 29/66(2006.01)
H01L 21/762(2006.01)
H01L 29/78(2006.01)
(52) Cooperative Patent Classification (CPC):
H01L 29/152; H01L 29/78; H01L 29/06; H01L 21/76232; H01L 29/66651
(86) International application number:
PCT/US2021/036711
(87) International publication number:
WO 2021/252704 (16.12.2021 Gazette 2021/50)
(84) Designated Contracting States:
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated Extension States:
BA ME
Designated Validation States:
KH MA MD TN

(30) Priority: 11.06.2020 US 202016898589
11.06.2020 US 202016898564

(71) Applicant: Atomera Incorporated
Los Gatos, CA 95032 (US)

(72) Inventors:
  • TAKEUCHI, Hideki
    San Jose, California 95129 (US)
  • YANG, Yung-Hsuan
    San Jose, California 95131 (US)

(74) Representative: Roberts, David et al
Page White & Farrer Limited Bedford House 21A John Street
London WC1N 2BF
London WC1N 2BF (GB)

   


(54) SEMICONDUCTOR DEVICE INCLUDING A SUPERLATTICE AND PROVIDING REDUCED GATE LEAKAGE AND ASSOCIATED METHODS