ATBECHDEDKESFRGBGRITLILUNLSEMCPTIESILTLVFIROMKCYALTRBGCZEEHUPLSK..HRIS..MTNORSMESM..................JBDM Ver 2.0.26 - 2999001/04199108CORRECTED EUROPEAN PATENT SPECIFICATIONB8B120240612W173deBibliographieenBibliographyfrBibliographieEP22211090.02022120220230530enenen202120272220211214JP2024061220242420230621202325202404242024172023111620240612202424H01L 29/423 20060101AFI20231006BHEP H01L 29/775 20060101ALI20231006BHEP H01L 29/786 20060101ALI20231006BHEP H01L 29/06 20060101ALI20231006BHEP H01L 29/08 20060101ALI20231006BHEP H01L 29/10 20060101ALI20231006BHEP H01L 29/66 20060101ALI20231006BHEP B82Y 10/00 20110101ALN20231006BHEP H01L 29/42392 20130101 FI20230425BHEP H01L 29/78696 20130101 LI20230425BHEP H01L 29/775 20130101 LI20230425BHEP H01L 29/78615 20130101 LI20230428BHEP B82Y 10/00 20130101 LA20230612BHEP H01L 29/0673 20130101 LI20230612BHEP H01L 29/66439 20130101 LI20230612BHEP H01L 29/0847 20130101 LI20230612BHEP H01L 29/1079 20130101 LI20230612BHEP H01L 29/66545 20130101 LI20230612BHEP H01L 29/0653 20130101 LI20230612BHEP deHALBLEITERBAUELEMENT UND VERFAHREN ZUR HERSTELLUNG EINES HALBLEITERBAUELEMENTSenSEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICEfrDISPOSITIF SEMI-CONDUCTEUR ET PROCÉDÉ DE FABRICATION DE DISPOSITIF SEMI-CONDUCTEURUS-A- 5 393 681US-A1- 2007 023 756US-A1- 2018 261 668US-A1- 2020 279 916Ohkawa, NarumiKuwana-shi, 511-0118JPUnited Semiconductor Japan Co., Ltd.102042516248 952 a/sfi2000 Mizono, Tado-choKuwana-shi, Mie 511-0118JPHoffmann Eitle100061036Patent- und Rechtsanwälte PartmbB Arabellastraße 3081925 MünchenDEALATBEBGCHCYCZDEDKEEESFIFRGBGRHRHUIEISITLILTLULVMCMEMKMTNLNOPLPTRORSSESISKSMTR