(19)
(11) EP 4 227 979 A8

(12) CORRECTED EUROPEAN PATENT APPLICATION
published in accordance with Art. 153(4) EPC

(15) Correction information:
Corrected version no 1 (W1 A1)

(48) Corrigendum issued on:
10.04.2024 Bulletin 2024/15

(43) Date of publication:
16.08.2023 Bulletin 2023/33

(21) Application number: 21946241.3

(22) Date of filing: 28.12.2021
(51) International Patent Classification (IPC): 
H01L 21/67(2006.01)
H01L 23/544(2006.01)
H01L 25/00(2006.01)
 H01L 21/68(2006.01)
H01L 23/00(2006.01)
H01L 25/065(2023.01)
(52) Cooperative Patent Classification (CPC):
H01L 24/75; H01L 2224/75753; H01L 2224/759; H01L 2224/7999; H01L 2224/80895; H01L 2224/80896; H01L 2224/80013; H01L 2224/08145; H01L 2224/94; H01L 25/50; H01L 23/544; H01L 24/98; H01L 24/80; H01L 2224/8013; H01L 2224/80132; H01L 2224/7565; H01L 2224/80357; H01L 2224/7531; H01L 2224/75745; H01L 2224/75725; H01L 2224/80908; H01L 2223/54426; H01L 2223/5442; H01L 2223/5448; H01L 2225/06593; H01L 2225/06524; H01L 25/0657; H01L 24/08; H01L 24/742
 
C-Sets:
H01L 2224/94, H01L 2224/80001;
(86) International application number:
PCT/CN2021/142026
(87) International publication number:
WO 2023/115612 (29.06.2023 Gazette 2023/26)
(84) Designated Contracting States:
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

(30) Priority: 24.12.2021 CN 202111594258

(71) Applicants:
  • HUBEI 3D SEMICONDUCTOR INTEGRATED INNOVATION CENTER CO., LTD.
    Wuhan, Hubei 430000 (CN)
  • Hubei Yangtze Memory Laboratories
    Wuhan, Hubei 430000 (CN)

(72) Inventors:
  • TIAN, Yingchao
    Wuhan, Hubei 430000 (CN)
  • LIU, Tianjian
    Wuhan, Hubei 430000 (CN)
  • CAO, Ruixia
    Wuhan, Hubei 430000 (CN)
  • WANG, Song
    Wuhan, Hubei 430000 (CN)

(74) Representative: Gevers Patents 
De Kleetlaan 7A
1831 Diegem
1831 Diegem (BE)


(56) References cited: : 
   
       


    (54) BONDING SYSTEM AND BONDING METHOD


    (57) Embodiments of the present disclosure provide a bonding system and a bonding method. The bonding system includes a bonding assembly, a wafer stage, a first alignment assembly and a second alignment assembly. The wafer stage is configured to drive, according to a first deviation value determined by the first alignment assembly and a second deviation value determined by the second alignment assembly, a carried wafer to move so as to align a second die with a first die. The bonding assembly is configured to bond the first die to the second die. The bonding system further includes a third alignment assembly located at a side of the wafer stage away from the bonding assembly, and configured to determine a third deviation value between positions of the first die and the second die which have been bonded. The bonding assembly is further configured to debond the first die from the second die, in response to that the third deviation value is greater than a preset threshold.