ATBECHDEDKESFRGBGRITLILUNLSEMCPTIESILTLVFIROMKCYALTRBGCZEEHUPLSKBAHRIS..MTNORSMESMMAKHTNMD..........
J
BDM Ver 2.0.24 - 1620000/0
4235821
EUROPEAN PATENT APPLICATION
A3
20231227
EP
23151265.8
20230112
en
en
en
20220025697
20220228
KR
20231227
202352
20230830
202335
H01L 33/06 20100101AFI20231117BHEP
H01L 33/28 20100101ALI20231117BHEP
H01L 33/32 20100101ALI20231117BHEP
H01L 25/075 20060101ALN20231117BHEP
H01L 33/06 20130101 FI20230713BHEP
H01L 33/32 20130101 LI20230713BHEP
H01L 33/28 20130101 LI20230713BHEP
H01L 33/20 20130101 LA20230901BHEP
H01L 25/0753 20130101 LA20230901BHEP
H01L 25/167 20130101 LA20230901BHEP
H01S 5/34333 20130101 LI20231109BHEP
de
LICHTEMITTIERENDES ELEMENT UND ANZEIGEVORRICHTUNG DAMIT
en
LIGHT-EMITTING ELEMENT AND DISPLAY DEVICE INCLUDING THE SAME
fr
ÉLÉMENT ÉLECTROLUMINESCENT ET DISPOSITIF D'AFFICHAGE LE COMPRENANT
5
Samsung Display Co., Ltd.
101925164
PN846729EP
1, Samsung-ro Giheung-gu
Yongin-si, Gyeonggi-do 17113
KR
JEON, Sang Ho
Yongin-si
KR
CHAE, Ji Song
Yongin-si
KR
LEE, Sang Hoon
Yongin-si
KR
JANG, Jin Hyuk
Yongin-si
KR
Marks & Clerk LLP
101955708
15 Fetter Lane
London EC4A 1BW
GB
AL
AT
BE
BG
CH
CY
CZ
DE
DK
EE
ES
FI
FR
GB
GR
HR
HU
IE
IS
IT
LI
LT
LU
LV
MC
ME
MK
MT
NL
NO
PL
PT
RO
RS
SE
SI
SK
SM
TR
BA
KH
MA
MD
TN
20231227
202352
A light-emitting element and a display device including the same are provided. The light-emitting element includes a first semiconductor layer doped with a first-type dopant, a second semiconductor layer doped with a second-type dopant, and a light-emitting layer disposed between the first semiconductor layer and the second semiconductor layer. The light-emitting layer includes at least one first material layer and at least one second material layer, wherein the at least one first material layer includes a zinc oxide (ZnO)-based material, and the at least one second material layer includes a gallium nitride (GaN)-based material.
PN846729EP
EP
23151265.8
Samsung Display Co., Ltd.
5
DH
20231123
H01L
H01S
US
5889295
A
RENNIE JOHN [JP] ET AL
19990330
X
1-13
Y
14,15
* the whole document *
US
2022052227
A1
KIM SE HUN [KR] ET AL
20220217
Y
14,15
A
1-13
* paragraphs [0053] - [0147]; figures 1-4 *
WANG ZHENHAI ET AL
Hybrid density functional study of band alignment in ZnO-GaN and ZnO-(Ga1-xZnx)(N1-xOx)-GaN heterostructures
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
20120925
14
45
10.1039/c2cp42115a
1463-9076
page 15693
XP093063870
A
1-15
* the whole document *
Simeonov, Dobri
The Hague
20231114
US
5889295
A
19990330
NONE
US
2022052227
A1
20220217
CN
114078992
A
20220222
EP
3955325
A1
20220216
KR
20220021946
A
20220223
US
2022052227
A1
20220217