MAGNETORESISTIVE RANDOM ACCESS MEMORY

(19)

(11)

EP 4 300 498 A3

(12)	EUROPEAN PATENT APPLICATION

(88)	Date of publication A3:
	10.04.2024 Bulletin 2024/15

(43)	Date of publication A2:
	03.01.2024 Bulletin 2024/01

(21)	Application number: 23210943.9

(22)	Date of filing: 27.03.2020

(51)

International Patent Classification (IPC):

H10N 50/10^(2023.01)

G11C 11/15^(2006.01)

(52)	Cooperative Patent Classification (CPC):
	G11C 11/161; H10N 50/10

(84)	Designated Contracting States:
	AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

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Priority:

09.05.2019 CN 201910384092

(62)	Application number of the earlier application in accordance with Art. 76 EPC:
	20166244.2 / 3736869

(71)	Applicant: United Microelectronics Corp.
	Hsin-Chu City 300 (TW)

(72)	Inventors:
	HUANG, Ting-Hsiang 741 Tainan City (TW) SHENG, Yi-Chung 701 Tainan City (TW) HSUEH, Sheng-Yuan 70465 Tainan City (TW) LEE, Kuo-Hsing 310 Zhudong Township, Hsinchu County (TW) KANG, Chih-Kai 71247 Tainan City (TW)

(74)	Representative: Isarpatent
	Patent- und Rechtsanwälte Barth Hassa Peckmann & Partner mbB Friedrichstraße 31 80801 München 80801 München (DE)

(54)	MAGNETORESISTIVE RANDOM ACCESS MEMORY

(57) A semiconductor device includes: a substrate having a magnetic tunneling junction (MTJ) region and a logic region; a magnetic tunneling junction (MTJ) on the MTJ region, wherein a top view of the MTJ comprises a circle; and a first metal interconnection on the MTJ. Preferably, a top view of the first metal interconnection comprises a flat oval overlapping the circle.

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