(19)
(11) EP 4 324 018 A1

(12)

(43) Date of publication:
21.02.2024 Bulletin 2024/08

(21) Application number: 22721998.7

(22) Date of filing: 19.04.2022
(51) International Patent Classification (IPC): 
H01L 21/02(2006.01)
(52) Cooperative Patent Classification (CPC):
H01L 21/0245; H01L 21/02488; H01L 21/02507; H01L 21/02532; H01L 29/66984; H01L 29/7613; H01L 29/1079; H01L 29/154; H01L 29/66977; B82Y 10/00
(86) International application number:
PCT/US2022/025307
(87) International publication number:
WO 2022/225901 (27.10.2022 Gazette 2022/43)
(84) Designated Contracting States:
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated Extension States:
BA ME
Designated Validation States:
KH MA MD TN

(30) Priority: 21.04.2021 US 202117236329
21.04.2021 US 202117236289

(71) Applicant: Atomera Incorporated
Los Gatos, CA 95032 (US)

(72) Inventors:
  • HYTHA, Marek
    Brookline, Massachusetts 02446 (US)
  • WEEKS, Keith Doran
    Chandler, Arizona 85224 (US)
  • CODY, Nyles Wynn
    Tempe, Arizona 85284 (US)
  • TAKEUCHI, Hideki
    San Jose, California 95129 (US)

(74) Representative: Page White Farrer 
Bedford House 21a John Street
London WC1N 2BF
London WC1N 2BF (GB)

   


(54) SEMICONDUCTOR DEVICE INCLUDING A SUPERLATTICE AND ENRICHED SILICON 28 EPITAXIAL LAYER AND ASSOCIATED METHODS