Technical Field
[0001] The present disclosure relates to an infrared sensor, and a method for manufacturing
an infrared sensor.
Background Art
[0002] Devices including an infrared sensor above a cavity are known in the related art.
[0003] For example, PTL 1 describes a device including a MEMS component. The device includes
a substrate. The substrate includes a transistor region, and a hybrid region. A transistor
is disposed in the transistor region. A lower sensor cavity is disposed in the hybrid
region. The MEMS component is disposed above the lower sensor cavity in the hybrid
region. The MEMS component includes a thermoelectric infrared sensor.
[0004] Infrared sensors including a thin film with a phononic crystal are also known.
[0005] For example, PTL 2 describes a thermopile infrared sensor including a beam. The beam
is a substance in the form of a thin film having a two-dimensional phononic crystal.
In the two-dimensional phononic crystal, through-holes of a given diameter are arranged
in-plane with a given period. According to PTL 2, microfabrication is performed such
that, within the beam, the period of the through-holes increases at given intervals
in the direction from an infrared receiver toward a base substrate. Enhanced thermal
insulation is thus provided across the entire beam. This results in enhanced sensitivity
of the infrared sensor.
[0006] Further, PTL 3 and NPL 1 each disclose a periodic structure of through-holes for
reducing the thermal conductivity of a thin film. In the periodic structure, in plan
view of the thin film, the through-holes are arranged regularly with a nanometer-order
period ranging from 1 nanometer (nm) to 1000 nm. The periodic structure is a type
of phononic crystal structure.
Citation List
Patent Literature
Non Patent Literature
Summary of Invention
[0009] The techniques mentioned above have room for reexamination from the viewpoint of
improving the detection sensitivity of an infrared sensor including a transistor and
a cavity.
[0010] Accordingly, the present disclosure provides a technique that is advantageous from
the viewpoint of increasing the sensitivity of infrared detection for an infrared
sensor including a transistor and a cavity.
[0011] The present disclosure provides an infrared sensor described below.
[0012] An infrared sensor including:
a transistor;
a cavity layer including a cavity; and
a sensor layer including a phononic crystal in which holes are arranged,
in which in plan view, the infrared sensor includes a first region and a second region,
the first region including the transistor, the second region including the cavity,
in which the cavity layer includes a flat major surface, the flat major surface being
disposed around the cavity and extending across both the first region and the second
region, and
in which the sensor layer is disposed on the flat major surface.
[0013] The infrared sensor according to the present disclosure is advantageous from the
viewpoint that the infrared sensor provides increased infrared detection sensitivity
while including the transistor and the cavity.
Brief Description of Drawings
[0014]
[Fig. 1A] Fig. 1A is a cross-sectional view of an infrared sensor according to Embodiment
1.
[Fig. 1B] Fig. 1B is a schematic plan view of the infrared sensor according to Embodiment
1.
[Fig. 2A] Fig. 2A is a plan view of an example of the unit cell of a phononic crystal.
[Fig. 2B] Fig. 2B is a plan view of another example of the unit cell of a phononic
crystal.
[Fig. 2C] Fig. 2C is a plan view of still another example of the unit cell of a phononic
crystal.
[Fig. 2D] Fig. 2D is a plan view of still another example of the unit cell of a phononic
crystal.
[Fig. 2E] Fig. 2E is a plan view of an example of a phononic crystal.
[Fig. 2F] Fig. 2F is a plan view of another example of a phononic crystal.
[Fig. 2G] Fig. 2G is a plan view of still another example of a phononic crystal.
[Fig. 2H] Fig. 2H is a plan view of still another example of a phononic crystal.
[Fig. 2I] Fig. 2I is a plan view of still another example of a phononic crystal.
[Fig. 2J] Fig. 2J is a plan view of still another example of a phononic crystal.
[Fig. 2K] Fig. 2K is a plan view of still another example of a phononic crystal.
[Fig. 2L] Fig. 2L is a plan view of still another example of a phononic crystal.
[Fig. 2M] Fig. 2M is a plan view of still another example of a phononic crystal.
[Fig. 2N] Fig. 2N is a plan view of still another example of a phononic crystal.
[Fig. 2O] Fig. 2O is a plan view of still another example of a phononic crystal.
[Fig. 3A] Fig. 3A is a cross-sectional view of a modification of the infrared sensor
according to Embodiment 1.
[Fig. 3B] Fig. 3B is a cross-sectional view of another modification of the infrared
sensor according to Embodiment 1.
[Fig. 3C] Fig. 3C is a cross-sectional view of still another modification of the infrared
sensor according to Embodiment 1.
[Fig. 3D] Fig. 3D is a cross-sectional view of still another modification of the infrared
sensor according to Embodiment 1.
[Fig. 3E] Fig. 3E is a cross-sectional view of still another modification of the infrared
sensor according to Embodiment 1.
[Fig. 3F] Fig. 3F is a cross-sectional view of still another modification of the infrared
sensor according to Embodiment 1.
[Fig. 3G] Fig. 3G is a cross-sectional view of still another modification of the infrared
sensor according to Embodiment 1.
[Fig. 4A] Fig. 4A is a cross-sectional view of the infrared sensor according to Embodiment
1, illustrating a method for manufacturing the infrared sensor.
[Fig. 4B] Fig. 4B is a cross-sectional view of the infrared sensor according to Embodiment
1, illustrating the method for manufacturing the infrared sensor.
[Fig. 4C] Fig. 4C is a cross-sectional view of the infrared sensor according to Embodiment
1, illustrating the method for manufacturing the infrared sensor.
[Fig. 4D] Fig. 4D is a cross-sectional view of the infrared sensor according to Embodiment
1, illustrating the method for manufacturing the infrared sensor.
[Fig. 4E] Fig. 4E is a cross-sectional view of the infrared sensor according to Embodiment
1, illustrating the method for manufacturing the infrared sensor.
[Fig. 4F] Fig. 4F is a cross-sectional view of the infrared sensor according to Embodiment
1, illustrating the method for manufacturing the infrared sensor.
[Fig. 4G] Fig. 4G is a cross-sectional view of the infrared sensor according to Embodiment
1, illustrating the method for manufacturing the infrared sensor.
[Fig. 4H] Fig. 4H is a cross-sectional view of the infrared sensor according to Embodiment
1, illustrating the method for manufacturing the infrared sensor.
[Fig. 4I] Fig. 4I is a cross-sectional view of the infrared sensor according to Embodiment
1, illustrating the method for manufacturing the infrared sensor.
[Fig. 4J] Fig. 4J is a cross-sectional view of the infrared sensor according to Embodiment
1, illustrating the method for manufacturing the infrared sensor.
[Fig. 4K] Fig. 4K is a cross-sectional view of the infrared sensor according to Embodiment
1, illustrating the method for manufacturing the infrared sensor.
[Fig. 5A] Fig. 5A is a schematic plan view of a sensor array according to Embodiment
2.
[Fig. 5B] Fig. 5B is a schematic plan view of a sensor array according to Embodiment
2.
Description of Embodiments
(Underlying Knowledge Forming Basis of the Present Disclosure)
[0015] It is considered that for an infrared sensor, separation between the infrared receiver
and the substrate due to the cavity tends to result in increased thermal insulation
between the infrared receiver and the substrate, and consequently increased infrared
detection accuracy. In this case, a component such as a beam is required to support
the infrared receiver. It is considered that if such a component has high thermal
insulation, infrared detection accuracy tends to increase.
[0016] One conceivable way to reduce the thermal conductivity of such a component is to
make the component porous. A component including a phononic crystal may exhibit a
thermal insulation performance exceeding the thermal insulation performance that can
be traditionally achieved through reduction of thermal conductance resulting from
decreased volume of the component associated with the porous structure of the component.
For example, PTL 2 describes that introducing a phononic crystal to the beam supporting
the infrared receiver may improve the sensitivity of the infrared sensor. To form
such a phononic crystal, it is conceivable to employ lithography processes including
photolithography, electron beam lithography, and block copolymer (BCP) lithography.
A phononic crystal includes an arrangement of holes with a period or diameter of 10
nm to 1000 nm. Formation of a phononic crystal thus requires very high exposure accuracy
and uniform formation of the coating of a resist film or other film.
[0017] It is conceivable to form an infrared sensor such that in plan view, the infrared
sensor has a region including a transistor, and a region including a cavity, as with
the infrared sensor described in PTL 1. In this case, irregularities that result in
steps with a height of about 1 µm may occur between the region including the transistor
and the region including the cavity. An investigation by the present inventors has
found that lithography performed on such an irregular surface to form a phononic crystal
can cause many defects in the phononic crystal, which may make it impossible to sufficiently
increase thermal insulation. For example, the steps resulting from the irregularities
cause defocusing during exposure, leading to decreased exposure accuracy. Another
potential defect is insufficient coverage of the coating of the resist film or other
film at the edges of the steps resulting from the irregularities, or formation of
pinholes in the depressions of the irregularities. In addition, the coating of the
resist film or other film tends to become uneven. Due to the circumstances mentioned
above, many defects develop in the phononic crystal, which results in the inability
to sufficiently increase thermal insulation. This makes it difficult to increase the
detection accuracy of the infrared sensor.
[0018] Accordingly, the present inventors have made intensive studies with regard to a technique
for increasing the infrared detection accuracy of an infrared sensor including a transistor
and a cavity. As a result, the inventors have obtained the knowledge that infrared
detection accuracy can be increased by adjusting the configuration of a major surface
of a layer including the cavity. Based on this novel knowledge, the inventors have
completed the present disclosure.
(Overview of One Aspect of Present Disclosure)
[0019] The present disclosure provides an infrared sensor described below.
[0020] An infrared sensor including:
a transistor;
a cavity layer including a cavity; and
a sensor layer including a phononic crystal in which holes are arranged,
in which in plan view, the infrared sensor includes a first region and a second region,
the first region including the transistor, the second region including the cavity,
in which the cavity layer includes a flat major surface, the flat major surface being
disposed around the cavity and extending across both the first region and the second
region, and
in which the sensor layer is disposed on the flat major surface.
[0021] With the infrared sensor described above, the sensor layer is disposed on the flat
major surface of the cavity layer. The flat major surface is disposed around the cavity,
and extends across both the first region and the second region. This configuration
tends to result in reduced defects in the phononic crystals. The infrared sensor described
above is therefore advantageous from the viewpoint that the infrared sensor provides
increased infrared detection sensitivity while including the transistor and the cavity.
The flat major surface of the cavity layer may be such that the mean height from the
surface of the substrate to the major surface of the cavity layer in the first region,
and the mean height from the surface of the substrate to the major surface of the
cavity layer in the second region have a difference of less than or equal to 50 nm.
(Embodiments of Present Disclosure)
[0022] Embodiments of the present disclosure will be described below with reference to the
drawings. Embodiments described below each represent a generic or specific example.
Specific details set forth in the following description of embodiments, such as numeric
values, shapes, materials, components, the positioning of components, the connections
of components, process conditions, steps, and the order of steps, are for illustrative
purposes only and not intended to limit the scope of the present disclosure. Those
components in the following description of embodiments which are not cited in the
independent claim representing the most generic concept of the present disclosure
will be described as optional components. It is to be understood that the drawings
are schematic in nature, and not necessarily drawn to scale.
(Embodiment 1)
[0023] Figs. 1A and 1B illustrate an infrared sensor 1a according to Embodiment 1. Fig.
1A is a cross-sectional view of the infrared sensor 1a taken along a line IA-IA in
Fig. 1B. The infrared sensor 1a includes a transistor 35, a cavity layer 22, and a
sensor layer 15. The transistor 35 is, for example, a metal-oxide-semiconductor (MOS)
field-effect transistor. The transistor 35 serve as, for example, a pixel selection
switch for a sensor array. The cavity layer 22 includes a cavity 25. The sensor layer
15 includes phononic crystals 11c and 12c in which holes 10h are arranged. In plan
view, the infrared sensor 1a includes a first region 5a, and a second region 5b. The
first region 5a includes the transistor 35. The second region 5b includes the cavity
25. The cavity layer 22 includes a flat major surface 22a. The major surface 22a is
disposed around the cavity 25, and extends across both the first region 5a and the
second region 5b. The sensor layer 15 is disposed on the major surface 22a.
[0024] As illustrated in Figs. 1A and 1B, for example, in plan view of the infrared sensor
1a, the second region 5b is adjacent to the first region 5a. The second region 5b
includes, for example, an element used for infrared sensing. The transistor 35 in
the first region 5a exhibits, for example, a switching action with respect to the
element used for infrared sensing included in the second region 5b adjacent to the
first region 5a.
[0025] As illustrated in Fig. 1A, the infrared sensor 1a includes, for example, a substrate
21, and a wiring layer 37. The cavity layer 22 is disposed on the substrate 21. The
cavity layer 22 is disposed between the substrate 21 and the sensor layer 15 in the
direction of its thickness. The cavity layer 22 is formed as an interlayer film.
[0026] The infrared sensor 1a includes, for example, an infrared reflector 40. The infrared
reflector 40 reflects infrared radiation toward the sensor layer 15. This configuration
tends to result in increased infrared detection accuracy of the infrared sensor 1a.
[0027] The infrared reflector 40 is, for example, in the form of a layer. For example, the
infrared reflector 40 defines at least part of one major surface of the substrate
21, and is in contact with the cavity 25. For example, the infrared reflector 40 defines
the same plane as that of the major surface of the substrate 21 around the infrared
reflector 40.
[0028] The material of the infrared reflector 40 is not limited to a particular material.
The material of the infrared reflector 40 includes, for example, doped silicon with
a carrier density greater than or equal to 1.0 × 10
19 cm
-3. In this case, high temperature annealing can be used in the manufacture of the infrared
sensor 1a. For example, if the substrate 21 is a Si substrate, the infrared reflector
40 can be formed by implantation of a dopant into the surface of the substrate 21.
The infrared reflector 40 may include a material with a melting point higher than
or equal to 850°C. As a result, high temperature annealing can be used in the manufacture
of the infrared sensor 1a. The infrared reflector 40 may be made of a metal such as
tungsten, or may be made of a metal compound such as TiN or TaN.
[0029] As illustrated in Fig. 1A, the sensor layer 15 includes, for example, a support layer
15s, a thermocouple 10, and a protective layer 15p. The thermocouple 10 is disposed
on the support layer 15s. The thermocouple 10 includes the phononic crystals 11c and
12c. The protective layer 15p covers the phononic crystals 11c and 12c.
[0030] The thermocouple 10 includes, for example, a p-type part 11, and an n-type part 12.
The p-type part 11 includes a p-type material, and has, for example, a positive Seebeck
coefficient. The n-type part 12 includes an n-type material, and has, for example,
a negative Seebeck coefficient. The p-type part 11 includes a first phononic crystal
11c in which the holes 10h are arranged in plan view. The n-type part 12 includes
a second phononic crystal 12c in which the holes 10h are arranged in plan view.
[0031] The sensor layer 15 includes, for example, a thermocouple layer 15t. The thermocouple
layer 15t includes the p-type part 11 and the n-type part 12. The thermocouple 10
includes, for example, a hot junction 13. The hot junction 13 is, for example, disposed
on the thermocouple layer 15t. The hot junction 13 electrically connects the p-type
part 11 and the n-type part 12 to each other. Accordingly, the p-type part 11, the
n-type part 12, and the hot junction 13 constitute a thermocouple element. The thermocouple
layer 15t includes, for example, a non-doped part 14 doped with no impurity. The thermocouple
layer 15t may be made up of the p-type part 11 and the n-type part 12.
[0032] The thickness of each of the support layer 15s, the thermocouple layer 15t, and the
protective layer 15p is not limited to a particular value. For example, the support
layer 15s, the thermocouple layer 15t, and the protective layer 15p each have a thickness
from 10 nm to 1000 nm. Each of the support layer 15s and the protective layer 15p
may be of a single-layer structure, or may be of a multi-layer structure.
[0033] As illustrated in Fig. 1A, the infrared sensor 1a includes the wiring layer 37. The
wiring layer 37 is disposed on top of the sensor layer 15. The wiring layer 37 includes
a wiring line 31a, a wiring line 31b, a wiring line 31c, and a wiring line 31d.
[0034] The wiring line 31a extends within a contact hole defined in the sensor layer 15
and in the cavity layer 22. The wiring line 31a electrically connects one end of the
thermocouple 10 and a ground 32 to each other. The wiring line 31b extends within
a contact hole defined in the sensor layer 15 and in the cavity layer 22. The wiring
line 31b electrically connects the other end of the thermocouple 10 and the transistor
35 to each other. The wiring line 31c and the wiring line 31d each extend within a
different contact hole. The transistor 35, and a signal processing circuit disposed
on a different substrate or on the same substrate are thus electrically connected
to each other.
[0035] As illustrated in Fig. 1B, the sensor layer 15 includes a beam 15b, a joint 15c,
and an infrared receiver 15e. In Fig. 1B, the protective layer 15p is not illustrated
for convenience of illustration. The joint 15c connects the sensor layer 15 to the
cavity layer 22. For example, the joint 15c is in contact with the cavity layer 22.
The beam 15b is connected to the infrared receiver 15e. The beam 15b supports the
infrared receiver 15e at a location away from the cavity layer 22. The beam 15b and
the infrared receiver 15e include the thermocouple layer 15t. In plan view of the
infrared sensor 1a, the beam 15b and the infrared receiver 15e overlap the cavity
25. The first phononic crystal 11c and the second phononic crystal 12c are formed
in, for example, the beam 15b. This tends to result in the beam 15b having high thermal
insulation, which tends to lead to increased infrared detection accuracy of the infrared
sensor 1a. Alternatively, the first phononic crystal 11c and the second phononic crystal
12c may be formed in the infrared receiver 15e. The hot junction 13 is disposed in
the infrared receiver 15e.
[0036] As illustrated in Fig. 1A, the first phononic crystal 11c and the second phononic
crystal 12c are formed in the thermocouple layer 15t. Alternatively, in the sensor
layer 15, the phononic crystals may be formed in the support layer 15s, or may be
formed in the protective layer 15p. The holes 10h in the phononic crystals may be
through-holes extending through the sensor layer 15, or may be blind holes. Forming
the holes 10h as through-holes tends to result in increased thermal insulation of
the beam 15b. Forming the holes 10h as blind holes tends to result in increased mechanical
strength of the sensor layer 15.
[0037] Incidence of infrared radiation on the infrared receiver 15e causes the temperature
of the infrared receiver 15e to rise. At this time, the higher the thermal insulation
between the infrared receiver 15e and the substrate 21, which serves as a heat bath,
the greater the temperature rise of the infrared receiver 15e. As the temperature
of the infrared receiver 15e rises, an electromotive force is generated in the thermocouple
10 due to the Seebeck effect. As the generated electromotive force is processed in
the signal processing circuit, the infrared sensor 1a senses infrared radiation. Depending
on the signal processing performed in the signal processing circuit, the infrared
sensor 1a is capable of measuring the intensity of infrared radiation and/or measuring
the temperature of an object of interest.
[0038] As illustrated in Fig. 1B, the sensor layer 15 includes the infrared receiver 15e,
which is in contact with the cavity 25. The presence of the cavity 25 in the infrared
sensor 1a allows high thermal insulation between the infrared receiver 15e of the
sensor layer 15, and the heat bath. Moreover, around the cavity 25, the flat major
surface 22a extends across both the first region 5a and the second region 5b, and
no irregularities are present. This results in relatively few defects in the first
phononic crystal 11c and the second phononic crystal 12c, which in turn tends to result
in increased thermal insulation between the infrared receiver of the sensor layer
15, and the substrate 21 serving as the heat bath. Therefore, the infrared detection
accuracy of the infrared sensor 1a tends to increase.
[0039] The shape of the holes 10h in each of the first phononic crystal 11c and the second
phononic crystal 12c is not limited to a particular shape. In plan view of the first
phononic crystal 11c or the second phononic crystal 12c, the holes 10h may have a
circular shape, or may have a polygonal shape such as a triangular shape or a quadrangular
shape.
[0040] For example, in each of the first phononic crystal 11c and the second phononic crystal
12c, the arrangement of the holes 10h has periodicity. In other words, in plan view
of the first phononic crystal 11c or the second phononic crystal 12c, the holes 10h
are arranged regularly. The holes 10h have a period of, for example, 1 nm to 5 µm.
Since the wavelength of heat-carrying phonons ranges mainly from 1 nm up to 5 µm,
the fact that the holes 10h have a period ranging from 1 nm to 5 µm is advantageous
from the viewpoint of reducing the thermal conductivity of each of the first phononic
crystal 11c and the second phononic crystal 12c.
[0041] Figs. 2A, 2B, 2C, and 2D each illustrate an example of a unit cell 10k of a phononic
crystal. The unit cell of each of the first phononic crystal 11c and the second phononic
crystal 12c is not limited to a particular unit cell. As illustrated in Fig. 2A, the
unit cell 10k may be a square lattice. As illustrated in Fig. 2B, the unit cell 10k
may be a triangular lattice. As illustrated in Fig. 2C, the unit cell 10k may be a
rectangular lattice. As illustrated in Fig. 2D, the unit cell 10k may be a face-centered
rectangular lattice.
[0042] The first phononic crystal 11c and the second phononic crystal 12c may each include
different kinds of unit cells. Fig. 2E illustrate an example of a phononic crystal.
As illustrated in Fig. 2E, the first phononic crystal 11c or the second phononic crystal
12c may include, for example, different arrangement patterns of holes 10h with two
different kinds of unit cells 10k.
[0043] The manner in which the holes 10h are arranged in the first phononic crystal 11c,
and the manner in which the holes 10h are arranged in the second phononic crystal
12c may be the same or may be different. Due to the above-mentioned structure of each
phononic crystal in which holes are arranged, the interface scattering frequency of
phonons can be adjusted, and thus the effective mean free path of phonons can be adjusted.
The shorter the characteristic length of a structure or other object, the higher the
interface scattering frequency of phonons.
[0044] In the infrared sensor 1a, the interface scattering frequency of phonons in the first
phononic crystal 11c differs from the interface scattering frequency of phonons in
the second phononic crystal 12c. Alternatively, the interface scattering frequency
of phonons in the first phononic crystal 11c may be the same as the interface scattering
frequency of phonons in the second phononic crystal 12c.
[0045] A case is now considered where the thermal conductivity of the p-type material included
in the p-type part 11, and the thermal conductivity of the n-type material included
in the n-type part 12 are different from each other. In this case, if the interface
scattering frequency of phonons in the first phononic crystal 11c differs from the
interface scattering frequency of phonons in the second phononic crystal 12c, the
thermal stress generated in the thermocouple 10 tends to decrease. This is because
the difference between the thermal conductivity in the p-type part 11 and the thermal
conductivity in the n-type part 12 can be reduced, which tends to result in uniform
temperature distribution in the thermocouple 10. This tends to result in reduced risk
of breakdown of the thermocouple 10 or other components of the infrared sensor 1a.
As used herein, the term thermal conductivity means, for example, a value at 25°C.
[0046] The infrared sensor 1a satisfies, for example, at least one condition selected from
the group consisting of (i), (ii), and (iii) described below. This may allow the first
phononic crystal 11c and the second phononic crystal 12c to differ in the interface
scattering frequency of phonons. Or,
- (i) The shortest distance between the two mutually closest holes 10h in plan view
of the first phononic crystal 11c differs from the shortest distance between two mutually
closest holes 10h in plan view of the second phononic crystal 12c.
- (ii) A ratio R1 differs from a ratio R2. The ratio R1 is the ratio of the sum of the
areas of the holes 10h to the area of the first phononic crystal 11c in plan view
of the first phononic crystal 11c. The ratio R2 is the ratio of the sum of the areas
of the holes 10h to the area of the second phononic crystal 12c in plan view of the
second phononic crystal 12c.
- (iii) A specific surface area SV1 differs from a specific surface area SV2. The specific
surface area SV1 is determined by dividing the surface area of the first phononic
crystal 11c by the volume of the first phononic crystal 11c. The specific surface
area SV2 is determined by dividing the surface area of the second phononic crystal
12c by the volume of the second phononic crystal 12c.
[0047] It is assumed that in the first phononic crystal 11c or the second phononic crystal
12c, the shortest distance between two mutually closest holes 10h differs depending
on the location within the corresponding phononic crystal. In this case, for example,
for each individual hole 10h, the shortest distance to the closest hole 10h is determined.
Then, the sum total of the shortest distances determined for such multiple holes 10h
may be divided by the number of the holes 10h to thereby determine the shortest distance
between two mutually closest holes 10h in plan view of the first phononic crystal
11c or the second phononic crystal 12c.
[0048] If the thermal conductivity of the p-type material in the p-type part 11 is higher
than the thermal conductivity of the n-type material in the n-type part 12, then,
for example, the interface scattering frequency of phonons in the first phononic crystal
11c is higher than the interface scattering frequency of phonons in the second phononic
crystal 12c. In this case, for example, at least one condition selected from the group
consisting of (ia), (iia), and (iiia) described below is satisfied.
(ia) The shortest distance between two mutually closest holes 10h in plan view of
the first phononic crystal 11c is less than the shortest distance between two mutually
closest holes 10h in plan view of the second phononic crystal 12c.
(iia) The ratio R1 is greater than the ratio R2.
(iiia) The specific surface area SV1 is greater than the specific surface area SV2.
[0049] If the thermal conductivity of the n-type material in the n-type part 12 is higher
than the thermal conductivity of the p-type material in the p-type part 11, then,
for example, the interface scattering frequency of phonons in the second phononic
crystal 12c is higher than the interface scattering frequency of phonons in the first
phononic crystal 11c. In this case, for example, at least one condition selected from
the group consisting of (ib), (iib), and (iiib) described below is satisfied.
(ib) The shortest distance between two mutually closest holes 10h in plan view of
the second phononic crystal 12c is less than the shortest distance between two mutually
closest holes 10h in plan view of the first phononic crystal 11c.
(iib) The ratio R2 is greater than the ratio R1.
(iiib) The specific surface area SV2 is greater than the specific surface area SV1.
[0050] Figs. 2F, 2G, 2H, 2I, 2J, 2K, 2L, 2M, 2N, and 2O each illustrate an example of a
phononic crystal constituting each of the first phononic crystal 11c and the second
phononic crystal 12c.
[0051] One of the first phononic crystal 11c and the second phononic crystal 12c may be,
for example, a phononic crystal 10a illustrated in Fig. 2F. In addition, the other
of the first phononic crystal 11c and the second phononic crystal 12c may be, for
example, a phononic crystal 10b illustrated in Fig. 2G.
[0052] In plan view of the phononic crystal 10a, the diameter of each hole 10h is d1, and
the shortest distance between two mutually closest holes 10h is c1. In plan view of
the phononic crystal 10b, the diameter of each hole 10h is d2, and the shortest distance
between two mutually closest holes 10h is c2. Although the relationship that d1 >
d2 is satisfied, for each of the phononic crystal 10a and the phononic crystal 10b,
the value obtained by dividing the diameter of each hole 10h by the period of the
arrangement of the holes 10h is the same. Accordingly, for each of the phononic crystal
10a and the phononic crystal 10b, the ratio of the sum of the areas of the holes to
the area of the phononic crystal in plan view is the same. Meanwhile, the relationship
that c1 < c2 is satisfied, and thus the interface scattering frequency of phonons
in the phononic crystal 10a is higher than the interface scattering frequency of phonons
in the phononic crystal 10b.
[0053] The shortest distance between two mutually closest holes in a phononic crystal can
be adjusted by, for example, the period of the regular arrangement of the holes. As
an example, a case is considered where the base material of the phononic crystal is
Si, the ratio of the sum of the areas of the holes to the area of the phononic crystal
in plan view is 50%, and the holes are arranged regularly with a period of less than
or equal to 100 nm. In this case, changing the period of the arrangement of the holes
by 10% may cause the thermal conductivity of the phononic crystal to change by greater
than or equal to 15%. As another example, a case is considered where the base material
of the phononic crystal is Si, the ratio of the sum of the areas of the holes to the
area of the phononic crystal in plan view is 50%, and the holes are arranged regularly
with a period of less than or equal to 50 nm. In this case, changing the period of
the arrangement of the holes by 5% may cause the thermal conductivity of the phononic
crystal to change by greater than or equal to 10%. Accordingly, for example, it would
be conceivable to adjust the difference between the period of the arrangement of the
holes in the phononic crystal included in the p-type part, and the period of the arrangement
of the holes in the phononic crystal included in the n-type part to about 5%. This
makes it possible to sufficiently reduce the difference between the thermal conductivity
of the phononic crystal in the p-type part and the thermal conductivity of the phononic
crystal in the n-type part, and consequently reduce the risk of breakdown of the thermocouple
or other components of the infrared sensor. It is to be noted that the greater the
ratio of the sum of the areas of holes to the area of a phononic crystal in plan view,
the greater the change in the thermal conductivity of the phononic crystal that may
be caused by a slight change in the period of the arrangement of the holes.
[0054] One of the first phononic crystal 11c and the second phononic crystal 12c may be
a phononic crystal 10c illustrated in Fig. 2H. In addition, the other of the first
phononic crystal 11c and the second phononic crystal 12c may be a phononic crystal
10d illustrated in Fig. 2I.
[0055] In plan view of the phononic crystal 10c, the diameter of each hole 10h is d3, and
the shortest distance between two mutually closest holes 10h is c3. In plan view of
the phononic crystal 10d, the diameter of each hole 10h is d4, and the shortest distance
between two mutually closest holes 10h is c4. The period of the arrangement of the
holes 10h is the same between the phononic crystal 10c and the phononic crystal 10d.
For the phononic crystal 10c and the phononic crystal 10d, the following relationship
is satisfied: d3 > d4 and c3 < c4. Now, the following items are considered: the shortest
distance between two mutually closest holes 10h; the ratio of the sum of the areas
of the holes 10h to the area of a phononic crystal in plan view; and the value obtained
by dividing the sum of the perimeters of the holes 10h in plan view of a phononic
crystal by the area of the first phononic crystal. By taking these items into consideration,
the interface scattering frequency of phonons in the phononic crystal 10c is higher
than the interface scattering frequency of phonons in the phononic crystal 10d.
[0056] For example, a case is considered where the base material of the phononic crystal
is Si, the holes are arranged regularly with a period of 300 nm, and the ratio of
the sum of the areas of the holes to the area of a phononic crystal in plan view is
greater than 19%. In this case, changing the ratio of the sum of the areas of the
holes to the area of the phononic crystal in plan view by 2% may cause the thermal
conductivity of the phononic crystal to change by greater than or equal to 10%. Accordingly,
for example, it would be conceivable to adjust the difference between the ratio of
the sum of the areas of the holes to the area of the phononic crystal in the p-type
part in plan view, and the ratio of the sum of the areas of the holes to the area
of the phononic crystal in the p-type part in plan view to about 2%. This makes it
possible to sufficiently reduce the difference between the thermal conductivity in
the p-type part and the thermal conductivity in the n-type part, and consequently
reduce the risk of breakdown of the thermocouple or other components of the infrared
sensor. It is to be noted that the less the period of the arrangement of the holes
in a phononic crystal, the greater the change in the thermal conductivity of the phononic
crystal that may be caused by a slight change in the ratio of the sum of the areas
of the holes to the area of the phononic crystal in plan view.
[0057] One of the first phononic crystal 11c and the second phononic crystal 12c may be
a phononic crystal 10e illustrated in Fig. 2J. In addition, the other of the first
phononic crystal 11c and the second phononic crystal 12c may be a phononic crystal
10f illustrated in Fig. 2K.
[0058] In plan view of the phononic crystal 10e, the diameter of each hole 10h is d5, and
the shortest distance between two mutually closest holes 10h is c5. In plan view of
the phononic crystal 10f, the diameter of each hole 10h is d5, and the shortest distance
between two mutually closest holes 10h is c6. In plan view of the phononic crystal
10e and the phononic crystal 10f, the diameter of each hole 10h is the same between
these phononic crystals. Meanwhile, the condition that c5 < c6 is satisfied. Now,
the following items are considered: the shortest distance between two mutually closest
holes 10h; the ratio of the sum of the areas of the holes 10h to the area of a phononic
crystal in plan view; and the value obtained by dividing the sum of the perimeters
of the holes 10h in plan view of a phononic crystal by the area of the first phononic
crystal. With these items taken into consideration, the interface scattering frequency
of phonons in the phononic crystal 10e is higher than the interface scattering frequency
of phonons in the phononic crystal 10f.
[0059] One of the first phononic crystal 11c and the second phononic crystal 12c may be
a phononic crystal 10g illustrated in Fig. 2L. In addition, the other of the first
phononic crystal 11c and the second phononic crystal 12c may be a phononic crystal
10m illustrated in Fig. 2M.
[0060] In plan view of the phononic crystal 10g and the phononic crystal 10m, the diameter
of each hole 10h is d7, and the shortest distance between two mutually closest holes
10h is c7. In plan view of the phononic crystal 10g, the unit cell of the arrangement
of the holes 10h is a triangular lattice. In plan view of the phononic crystal 10m,
the unit cell of the arrangement of the holes 10h is a square lattice. A triangular
lattice has a packing fraction higher than the packing fraction of a square lattice.
Now, the following items are considered: the ratio of the sum of the areas of the
holes 10h to the area of a phononic crystal in plan view; and the value obtained by
dividing the sum of the perimeters of the holes 10h in plan view of a phononic crystal
by the area of the first phononic crystal. With these items taken into consideration,
the interface scattering frequency of phonons in the phononic crystal 10g is higher
than the interface scattering frequency of phonons in the phononic crystal 10m.
[0061] One of the first phononic crystal 11c and the second phononic crystal 12c may be
a phononic crystal 10i illustrated in Fig. 2N. In addition, the other of the first
phononic crystal 11c and the second phononic crystal 12c may be a phononic crystal
10j illustrated in Fig. 2O.
[0062] Each of the phononic crystal 10i and the phononic crystal 10j has, with respect to
the arrangement of the holes 10h, multiple kinds of arrangement patterns. The phononic
crystal 10i has, in plan view, an arrangement pattern of holes 10h in which the diameter
of each hole 10h is d8, and in which the shortest distance between two mutually closest
holes 10h is c8. In addition, the phononic crystal 10i has, in plan view, an arrangement
pattern of holes 10h in which the diameter of each hole 10h is d9, and in which the
shortest distance between two mutually closest holes 10h is c9. The phononic crystal
10j has, in plan view, an arrangement pattern of holes 10h in which the diameter of
each hole 10h is d8, and in which the shortest distance between two mutually closest
holes 10h is c8. In addition, the phononic crystal 10i has, in plan view, an arrangement
pattern of holes 10h in which the diameter of each hole 10h is d10, and in which the
shortest distance between two mutually closest holes 10h is c10. The relationship
that d9 > d10 is satisfied. With the ratio of the sum of the areas of the holes 10h
to the area of a phononic crystal in plan view being taken into consideration, the
interface scattering frequency of phonons in the phononic crystal 10i is higher than
the interface scattering frequency of phonons in the phononic crystal 10j.
[0063] The difference between the thermal conductivity of the first phononic crystal 11c
and the thermal conductivity of the second phononic crystal 12c is not limited to
a particular value. The difference is, for example, less than or equal to 10% of the
lower one of the thermal conductivity of the first phononic crystal 11c and the thermal
conductivity of the second phononic crystal 12c. This tends to allow the thermocouple
10 to maintain uniform temperature, which makes it possible to reduce the risk of
breakdown of a component of the infrared sensor 1a caused by thermal stress. Alternatively,
the difference between the thermal conductivity of the first phononic crystal 11c
and the thermal conductivity of the second phononic crystal 12c may be greater than
or equal to 10% of the lower one of these thermal conductivities. It is to be understood
that it is effective to make the difference in thermal conductivity between the first
phononic crystal 11c and the second phononic crystal 12c less than the difference
in thermal conductivity between the p-type material included in the p-type part 11
and the n-type material included in the n-type part 12.
[0064] The difference between the thermal conductivity of the first phononic crystal 11c
and the thermal conductivity of the second phononic crystal 12c is, for example, less
than or equal to 5 W/(m·K). The difference may be less than or equal to 1 W/(m·K),
or may be less than or equal to 0.5 W/(m·K).
[0065] The substrate 21 is typically made of a semiconductor. The semiconductor is, for
example, Si. It is to be noted, however, that the substrate 21 may be made of a semiconductor
other than Si, or a material other than a semiconductor.
[0066] The material of the cavity layer 22 is not limited to a particular material. The
cavity layer 22 includes, for example, an insulator such as SiO
2, SiN, or SiC. The thickness of the cavity layer 22 is not limited to a particular
value. The cavity layer 22 has a thickness of, for example, 600 nm to 2000 nm. This
tends to allow the infrared sensor 1a to absorb infrared radiation with a wavelength
ranging from 8 µm to 14 µm.
[0067] The base material of the semiconductor included in each of the p-type part 11 and
the n-type part 12 may be a semiconductor material for which the carriers responsible
for electrical conduction can be adjusted through doping to either electron holes
or electrons. Examples of such a semiconductor material include Si, SiGe, SiC, GaAs,
InAs, InSb, InP, GaN, ZnO, and BiTe. The base material of the semiconductor is not
limited to those exemplified above. The base material of the semiconductor may be
a monocrystalline material, a polycrystalline material, or an amorphous material.
For a monocrystalline material, the atomic arrangement is maintained in order for
extended distances. The kind of the base material of the semiconductor included in
the n-type part 12 may be either the same as or different from the kind of the base
material of the semiconductor included in the p-type part 11.
[0068] The material of the support layer 15s is not limited to a particular material. The
material of the support layer 15s is, for example, different from the material of
the thermocouple layer 15t. The material of the support layer 15s may be a semiconductor
material such as Si, SiGe, SiC, GaAs, InAs, InSb, InP, GaN, or ZnO, or may be an insulator
material such as SiO
2, SiN, or Al
2O
3. The material of the support layer 15s may be a monocrystalline material, a polycrystalline
material, or an amorphous material.
[0069] The material of the protective layer 15p may be either the same as or different from
the material of the thermocouple layer 15t. The material of the protective layer 15p
is not limited to a particular material. The material of the protective layer 15p
may be a semiconductor material such as Si, SiGe, SiC, GaAs, InAs, InSb, InP, GaN,
or ZnO, or may be an insulator material such as SiO
2, SiN, or Al
2O
3. The material of the protective layer 15p may be a monocrystalline material, a polycrystalline
material, or an amorphous material.
[0070] The hot junction 13 is made of, for example, a metal film or a metal compound film.
The metal film or metal compound film that constitutes the hot junction 13 is not
limited to a particular film, but may be, for example, a film of a metal or metal
compound used in semiconductor processes, such as TiN, TaN, Al, Ti, or Cu. The sheet
resistance of the metal film or metal compound film constituting the hot junction
13 may be matched to the impedance of the vacuum to allow the hot junction 13 to serve
as an infrared absorption layer. For example, if the hot junction 13 includes TiN,
adjusting the thickness of the hot junction 13 to about 10 nm makes it possible to
match the sheet resistance of the hot junction 13 to the impedance of the vacuum.
[0071] The material of the wiring layer 37 is not limited to a particular material. The
wiring layer 37 is made of, for example, an extrinsic semiconductor, a metal, or a
metal compound. Examples of the metal and the metal compound may include materials
used in common semiconductor processes, such as Al, Cu, TiN, and TaN.
[0072] The infrared sensor 1a can be changed from various viewpoints. Figs. 3A, 3B, 3C,
3D, 3E, 3F, and 3G illustrate modifications of the infrared sensor 1a. These modifications
are similar in configuration to the infrared sensor 1a, except for features specifically
described otherwise. Components according to individual modifications identical or
corresponding to the components of the infrared sensor 1a are designated by the same
reference signs, and not described in further detail. Descriptions related to the
infrared sensor 1a also apply to these modifications insofar as no technical contradiction
arises.
[0073] As illustrated in Fig. 3A, an infrared sensor 1b includes, for example, a protective
film 26. The protective film 26 is, for example, provided along the bottom face of
the cavity 25. The protective film 26 is, for example, disposed on the infrared reflector
40. The configuration mentioned above allows the infrared reflector 40 to be protected
from oxidizing environments and chemical solutions.
[0074] The material of the protective film 26 is not limited to a particular material. The
material of the protective film 26 is, for example, different from the material of
the infrared reflector 40. The protective film 26 includes, for example, an insulator
such as SiO
2, SiN, or SiC. The thickness of the protective film 26 is not limited to a particular
value. The thickness of the protective film 26 is, for example, 10 nm to 200 nm.
[0075] As illustrated in Fig. 3B, an infrared sensor 1c includes, for example, the protective
film 26. In addition, the infrared sensor 1c includes an insulating film 38. The insulating
film 38 is disposed on top of the sensor layer 15. For example, at least part of each
of the wiring lines 31a, 31b, 31c, and 31d extends within a contact hole defined in
the insulating film 38. The configuration mentioned above allows the insulating film
38 to protect the sensor layer 15.
[0076] As illustrated in Fig. 3C, in an infrared sensor 1d, the infrared reflector 40 may
be disposed on one major surface of the substrate 21. For example, a film of a semiconductor
such as polysilicon is formed on one major surface of the substrate 21, and doping
is applied to the film to thereby obtain the infrared reflector 40.
[0077] As illustrated in Fig. 3D, an infrared sensor 1e includes, for example, the protective
film 26. In addition, the infrared sensor 1e further includes an infrared absorption
layer 18. The infrared absorption layer 18 is, for example, disposed on the sensor
layer 15. In plan view, the infrared absorption layer 18 overlaps the hot junction
13. The infrared sensor 1e thus tends to have increased sensitivity to infrared radiation.
The infrared absorption layer 18 is not limited to a particular configuration. The
infrared absorption layer 18 may be a film of a material such as TaN, Cr, or Ti, may
be a porous metal film, or may be a dielectric such as SiO
2.
[0078] As illustrated in Fig. 3E, in an infrared sensor 1f, each of the first phononic crystal
11c and the second phononic crystal 12c is provided not only in the beam 15b but also
in the infrared receiver 15e. This allows for further increased thermal insulation
between the substrate 21 and the infrared receiver 15e.
[0079] As illustrated in Figs. 3F and 3G, infrared sensors 1g and 1h each include multiple
thermocouples 10.
[0080] In the infrared sensor 1g, the thermocouples 10 are disposed in parallel. In this
case, even if one of the thermocouples 10 breaks down, another thermocouple 10 can
be used to detect infrared radiation.
[0081] In the infrared sensor 1h, the thermocouples 10 are disposed in series.
In this case, an output corresponding to the sum of thermoelectromotive forces generated
in the thermocouples 10 is obtained. The infrared sensor 1h thus tends to have increased
sensitivity. As illustrated in Fig. 3G, the infrared sensor 1h includes a cold junction
16. The cold junction 16 is connected to the joint 15c. The cold junction 16 electrically
connects the thermocouples 10 to each other. The cold junction 16 includes, for example,
a metal film. As illustrated in Fig. 3G, in the infrared sensor 1h, the p-type part
11 and the n-type part 12 are provided in the same beam 15b. Consequently, the first
phononic crystal 11c and the second phononic crystal 12c are provided in the same
beam 15b.
[0082] An example of a method for manufacturing the infrared sensor 1a according to Embodiment
1 is described below. The method for manufacturing the infrared sensor 1a is not limited
to the method described below.
[0083] The method for manufacturing the infrared sensor 1a includes, for example, Items
(I) and (II) described below. (I) Forming the flat major surface 22a by flattening
an irregular surface of a multilayer body 50 including the transistor 35. The flat
major surface 22a includes a surface of a sacrificial region 51a that is positioned
away from the transistor 35 in plan view. In addition, the flat major surface 22a
overlaps the transistor 35 in plan view.
(II) Forming the sensor layer 15 on the flat major surface 22a. The sensor layer 15
includes the phononic crystals 11c and 12c in which the holes 10h are arranged.
[0084] With the manufacturing method mentioned above, lithography for forming the phononic
crystals 11c and 12c can be performed on the major surface 22a, which is a flat surface
with no steps. This tends to lead to reduced defects in the phononic crystals 11c
and 12c, and to increased infrared detection accuracy of the infrared sensor 1a.
[0085] In manufacturing the infrared sensor 1a, for example, the cavity 25 is formed by
etching away the sacrificial region 51a.
[0086] As illustrated in Fig. 4A, a pixel selection switch including the transistor 35 is
created in one region of the substrate 21. The first region 5a is thus defined. The
substrate 21 is, for example, a Si substrate. The transistor 35 can be, for example,
manufactured in accordance with a known transistor manufacturing method. Additionally,
the ground 32 is created in another region of the substrate 21. After the transistor
35 is created, an impurity such as boron or phosphorus is implanted at high concentration
into a region of the substrate 21 that is to become the infrared reflector 40. Then,
annealing is performed at a temperature from 1000°C to 1100°C, which causes carriers
to be activated in a region on the substrate 21 that has been doped with the impurity
at high concentration. The doped region thus serves as the infrared reflector 40.
Subsequently, an interlayer film including a dielectric such as SiO
2 is formed on the surface of the substrate 21. The interlayer film can be formed by
use of deposition methods such as chemical vapor deposition (CVD) and sputtering.
A recess 25a is formed in the interlayer film by photolithography and etching. The
cavity layer 22 is thus obtained.
[0087] Subsequently, as illustrated in Fig. 4B, a sacrificial layer 51 is formed so as to
cover the recess 25a. The sacrificial layer 51 is made of, for example, a material
such as Si that is different from the material of the cavity layer 22.
[0088] As illustrated in Fig. 4C, the sacrificial layer 51 is removed in regions outside
of the recess 25a by chemical mechanical polishing (CMP) or other methods. As a result,
the sacrificial region 51a is formed in the cavity layer 22, and the flat major surface
22a is formed. More specifically, for example, for a region with irregularities of
about 500 to 1000 nm, flattening is performed by chemical mechanical polishing such
that the mean height from the surface of the substrate to the major surface of the
cavity layer in the first region, and the mean height from the surface of the substrate
to the major surface of the cavity layer in the second region have a difference of
less than or equal to 50 nm.
[0089] Subsequently, as illustrated in Fig. 4D, the support layer 15s is formed on the flat
major surface 22a. The support layer 15s includes a material different from the material
of the sacrificial region 51a. For example, the support layer 15s is a film of a material
such as SiOi or SiN. Subsequently, the thermocouple layer 15t made of a semiconductor
such as Si is formed. The p-type part 11 and the n-type part 12 are then formed through
doping. The doping may be performed by use of a known method such as ion implantation.
After doping with an impurity, annealing is performed, which causes carriers to be
activated.
[0090] Subsequently, as illustrated in Fig. 4E, the first phononic crystal 11c and the second
phononic crystal 12c are formed in the thermocouple layer 15t. To form the first phononic
crystal 11c and the second phononic crystal 12c, a predetermined kind of lithography
is used in accordance with the shape and size of the holes 10h. For example, to form
the holes 10h with a period greater than or equal to 300 nm, photolithography is used.
To form the holes 10h with a period from 100 nm to 300 nm, electron beam lithography
is used. To form the holes 10h with a period from 1 nm to 100 nm, block copolymer
lithography is used. To form the first phononic crystal 11c and the second phononic
crystal 12c, nanoimprint lithography or other kinds of lithography may be used. Any
of the above kinds of lithography allows for formation of the phononic crystals in
any region of the thermocouple layer 15t.
[0091] A phononic crystal including multiple kinds of unit cells 10k as illustrated in Figs.
2E, 2N, and 2O can be formed through preparation, in advance, of writing patterns
corresponding to the multiple kinds of unit cells by means of photolithography or
electron beam lithography. Such a phononic crystal including multiple kinds of unit
cells may be formed by a combination of multiple kinds of lithography. For example,
unit cells with a comparatively small period are formed in a desired region by block
copolymer lithography or electron beam lithography. Then, unit cells with a comparatively
large period are formed in the same region in an overlapping manner by photolithography.
[0092] As illustrated in Fig. 4F, after the first phononic crystal 11c and the second phononic
crystal 12c are formed, photolithography and etching are performed to define a region
constituting the thermocouple layer 15t.
[0093] Subsequently, as illustrated in Fig. 4G, a film of a metal compound such as TiN or
TaN, or a film of a metal such as Al, Cr, Ti, or Cu is formed on the thermocouple
layer 15t, and the metal compound film or the metal film is etched to thereby form
the hot junction 13.
[0094] As illustrated in Fig. 4H, after the hot junction 13 is formed, a film of a material
such as SiOi or SiN is formed so as to cover the thermocouple layer 15t to thereby
form the protective layer 15p. In this way, the sensor layer 15 is obtained. After
the protective layer 15p is formed, the surface of the protective layer 15p is flattened
by CMP. This allows the subsequent fabrication of wiring to be performed with accuracy.
[0095] Subsequently, as illustrated in Fig. 4I, contact holes 52a, 52b, 53, and 54 are formed
in the sensor layer 15 and the cavity layer 22 by photolithography and etching. The
contact hole 52a extends from the surface of the sensor layer 15 to the ground 32.
The contact hole 52b extends from the surface of the sensor layer 15 to the p-type
part 11. The contact hole 53 extends from the surface of the sensor layer 15 to the
n-type part 12. The contact holes 54 extends from the surface of the sensor layer
15 to the transistor 35.
[0096] Subsequently, as illustrated in Fig. 4J, a metal film made of a metal such as Al
is formed so as to cover the sensor layer 15. As the metal film is formed, the interior
of each of the contact holes 52a, 52b, 53, and 54 is filled with the metal. The metal
film on the surface of the sensor layer 15 is partially removed by photolithography
and etching to thereby form the wiring lines 31a, 31b, 31c, and 31d. These wiring
lines are electrically connected to a signal processing circuit formed separately
in the substrate 21 or outside of the substrate 21.
[0097] Subsequently, as illustrated in Fig. 4K, the support layer 15s and the protective
layer 15p are partially etched to thereby define the infrared receiver 15e and the
beam 15b. In this case, the support layer 15s and the protective layer 15p are etched
such that the sacrificial region 51a is partially exposed. Lastly, the sacrificial
region 51a is removed by selective etching. As a result, the cavity 25 is formed in
the cavity layer 22, and the beam 15b and an infrared receiver 15d in the sensor layer
15 are suspended while being spaced apart from the cavity layer 22. In this way, the
infrared sensor 1a is manufactured.
[0098] The infrared sensors 1b to 1h can be manufactured by employing the manufacturing
method mentioned above. For example, if the protective film 26 is to be formed as
with the infrared sensor 1b, the protective film 26 may be formed after the recess
25a is formed, such that the protective film 26 covers the bottom face of the recess
25a. In this case, portions of the protective film 26 that cover areas other than
the bottom and lateral faces of the recess 25a are removed by photolithography and
etching.
[0099] The manufacturing method mentioned above can be employed to manufacture the infrared
sensor 1a also for a case where, in the infrared sensor 1a, the interface scattering
frequency of phonons in the first phononic crystal 11c differs from the interface
scattering frequency of phonons in the second phononic crystal 12c.
[0100] Reference is now made to an exemplary method for creating the sensor layer 15 such
that the interface scattering frequency of phonons in the first phononic crystal 11c
differs from the interface scattering frequency of phonons in the second phononic
crystal 12c.
[0101] For example, in accordance with the first phononic crystal 11c and the second phononic
crystal 11c, a photomask designed with holes having different diameters, different
periods, or different unit cells is prepared. A pattern for the first phononic crystal
11c may be formed on the same photomask as the photomask used for forming the second
phononic crystal 12c, or may be formed on a photomask different from the photomask
used for forming the second phononic crystal 12c. Through exposure and development
processes, the pattern for each of the first phononic crystal 11c and the second phononic
crystal 12c written on the photomask is transferred to a resist film applied onto
the thermocouple layer 15t. Subsequently, the thermocouple layer 15t is etched from
the top face of the resist film to thereby form the holes 10h for each of the first
phononic crystal 11c and the second phononic crystal 12c. Lastly, the resist film
is removed. The holes 10h in each of the first phononic crystal 11c and the second
phononic crystal 12c are thus obtained.
[0102] Reference is now made to a case where phononic crystals are formed by electron beam
lithography. For a region corresponding to the first phononic crystal 11c and a region
corresponding to the second phononic crystal 12c, writing patterns of holes with different
diameters, different periods, or different unit cells are input to an electron beam
irradiation apparatus. In accordance with the input data, an electron beam is scanned
to irradiate the thermocouple layer 15t. Respective patterns for the first phononic
crystal 11c and the second phononic crystal 12c are thus directly written on a resist
film applied onto the thermocouple layer 15t. After the written pattern is developed,
the thermocouple layer 15t is etched from the top face of the resist film onto which
the pattern has been transferred. The holes 10h for each of the first phononic crystal
11c and the second phononic crystal 12c are thus formed. Lastly, the resist film is
removed to thereby obtain the holes 10h in each of the first phononic crystal 11c
and the second phononic crystal 12c.
[0103] If the phononic crystals are to be formed by block copolymer lithography, for example,
block copolymers with different compositions are used for forming the first phononic
crystal 11c and for forming the second phononic crystal 12c. The period and arrangement
pattern of self-assembly structures in a block copolymer vary with the kind of the
block copolymer or with the compositional ratio between individual polymers in the
block copolymer. Accordingly, using two kinds of block copolymers with different compositions
makes it possible to form two kinds of phononic crystals with different diameters,
different periods, or different unit cells. First, the first phononic crystal 11c
is formed through block copolymer lithography by use of a first block copolymer. The
second phononic crystal 12c is then formed through block copolymer lithography by
use of a second block copolymer. It is to be noted that known process conditions may
be used for the block copolymer lithography.
(Embodiment 2)
[0104] Figs. 5A and 5B respectively illustrate sensors arrays 2a and 2b according to Embodiment
2. The sensor arrays 2a and 2b each include infrared sensors 1a arranged in one dimension
or in two dimensions. The infrared sensors 1a arranged in one dimension or in two
dimensions are interconnected by signal processing circuits 60 and wiring lines 62.
In each of the sensor arrays 2a and 2b, the infrared sensors arranged in one dimension
or in two dimensions may include, instead of the infrared sensor 1a, one infrared
sensor selected from the group consisting of the infrared sensors 1a to 1h. In each
of the sensor arrays 2a and 2b, the infrared sensors arranged in one dimension or
in two dimensions may include multiple kinds of infrared sensors selected from the
group consisting of the infrared sensors 1a to 1h.
[0105] The first region of the infrared sensor according to the present disclosure may include,
in addition to or instead of the transistor, an element such as a diode or a capacitor,
a wiring line, or other components or features.
Industrial Applicability
[0106] The infrared sensor according to the present disclosure can be used for various applications.
Reference Signs List
[0107]
1a, 1b, 1c, 1d, 1e, 1f, 1g, 1h infrared sensor
2a, 2b sensor array
10 thermocouple
10h hole
11 p-type part
11c first phononic crystal
12 n-type part
12c second phononic crystal
15 sensor layer
15p protective layer
15s support layer
22 cavity layer
22a flat major surface
25 cavity
35 transistor
40 infrared reflector
51a sacrificial region