(19)
(11) EP 4 345 922 B8

(12) CORRECTED EUROPEAN PATENT SPECIFICATION
Note: Bibliography reflects the latest situation

(15) Correction information:
Corrected version no 1 (W1 B1)

(48) Corrigendum issued on:
11.06.2025 Bulletin 2025/24

(45) Mention of the grant of the patent:
07.05.2025 Bulletin 2025/19

(21) Application number: 22199219.1

(22) Date of filing: 30.09.2022
(51) International Patent Classification (IPC): 
H01L 33/00(2010.01)
H01L 33/32(2010.01)
 H01L 33/12(2010.01)
H01L 21/02(2006.01)
(52) Cooperative Patent Classification (CPC):
H01L 21/0254; H01L 21/02381; H01L 21/02458; H01L 21/02505; H01L 21/02513; H01L 21/02488; H10H 20/01335; H10H 20/815; H10H 20/825

(54)

GAN-ON-SI EPIWAFER COMPRISING A STRAIN-DECOUPLING SUB-STACK

GAN-AUF-SI-EPIWAFER MIT EINEM SPANNUNGSENTKOPPLUNGS-SUBSTAPEL

PLAQUETTE EPI GAN-SUR-SI COMPRENANT UNE SOUS-PILE DE DÉCOUPLAGE DE CONTRAINTE

(84) Designated Contracting States:
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

(43) Date of publication of application:
03.04.2024 Bulletin 2024/14

(73) Proprietor: ALLOS Semiconductors GmbH
01069 Dresden (DE)

(72) Inventors:
  • Nishikawa, Atsushi
    01069 Dresden (DE)
  • Lösing, Alexander
    48691 Vreden (DE)

(74) Representative: Eisenführ Speiser 
Patentanwälte Rechtsanwälte PartGmbB Stralauer Platz 34
10243 Berlin
10243 Berlin (DE)


(56) References cited: : 
EP-A1- 3 751 023
US-A1- 2012 003 821
US-A1- 2013 001 644
 US-A1- 2011 121 357
US-A1- 2012 126 201
US-A1- 2014 353 677
   
       
    Note: Within nine months from the publication of the mention of the grant of the European patent, any person may give notice to the European Patent Office of opposition to the European patent granted. Notice of opposition shall be filed in a written reasoned statement. It shall not be deemed to have been filed until the opposition fee has been paid. (Art. 99(1) European Patent Convention).