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(11) | EP 4 354 514 A3 |
| (12) | EUROPEAN PATENT APPLICATION |
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| (54) | SCHOTTKY BARRIER DIODE |
| (57) A Schottky barrier diode includes a semiconductor layer of a first conductivity type
including a wide-bandgap semiconductor and a trench defining a mesa portion on a first
surface thereof, a high-resistance region under the trench of the semiconductor layer,
the high-resistance region including an impurity of a second conductivity type different
from the first conductivity type, an insulating film or a semiconductor film of the
second conductivity type, the insulating film or semiconductor film covering at least
a bottom surface among inner surfaces of the trench, an anode electrode on the semiconductor
layer through the insulating film or the semiconductor film, the anode electrode being
connected to the mesa portion, and a cathode electrode directly or through another
layer on a second surface of the semiconductor layer on the opposite side to the first
surface.
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