(19)
(11) EP 4 434 091 A1

(12)

(43) Date of publication:
25.09.2024 Bulletin 2024/39

(21) Application number: 21840520.7

(22) Date of filing: 16.12.2021
(51) International Patent Classification (IPC): 
H01L 29/20(2006.01)
H01L 29/739(2006.01)
(52) Cooperative Patent Classification (CPC):
H01L 29/2003; H01L 29/7392; H01L 29/205
(86) International application number:
PCT/EP2021/086154
(87) International publication number:
WO 2023/110101 (22.06.2023 Gazette 2023/25)
(84) Designated Contracting States:
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated Extension States:
BA ME
Designated Validation States:
KH MA MD TN

(71) Applicant: Huawei Digital Power Technologies Co., Ltd.
Shenzhen, Guangdong 518043 (CN)

(72) Inventor:
  • CURATOLA, Gilberto
    80992 Munich (DE)

(74) Representative: Maiwald GmbH 
Engineering Elisenhof Elisenstrasse 3
80335 München
80335 München (DE)

   


(54) GALLIUM NITRIDE POWER TRANSISTOR AND METHOD FOR PRODUCING A GAN POWER TRANSISTOR