(19)
(11) EP 4 435 851 A3

(12) EUROPEAN PATENT APPLICATION

(88) Date of publication A3:
16.10.2024 Bulletin 2024/42

(43) Date of publication A2:
25.09.2024 Bulletin 2024/39

(21) Application number: 24163968.1

(22) Date of filing: 15.03.2024
(51) International Patent Classification (IPC): 
H01L 23/373(2006.01)
H01L 23/367(2006.01)
 H01L 23/42(2006.01)
(52) Cooperative Patent Classification (CPC):
H01L 23/42; H01L 23/3736; H01L 23/3128; H01L 23/3677; H01L 23/04; H01L 23/10
(84) Designated Contracting States:
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC ME MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated Extension States:
BA
Designated Validation States:
GE KH MA MD TN

(30) Priority: 23.03.2023 US 202363491784 P
16.11.2023 US 202318510825

(71) Applicant: MediaTek Inc.
30078 Hsinchu City (TW)

(72) Inventors:
  • HUANG, Pu-Shan
    30078 Hsinchu City (TW)
  • CHEN, Chi-Yuan
    30078 Hsinchu City (TW)
  • LIN, Shih-Chin
    30078 Hsinchu City (TW)

(74) Representative: Haseltine Lake Kempner LLP 
Cheapside House 138 Cheapside
London EC2V 6BJ
London EC2V 6BJ (GB)

   


(54) SEMICONDUCTOR DEVICE


(57) A semiconductor device is provided. The semiconductor device includes a substrate, a semiconductor die, a lid, a liquid metal, a gel and a thermal dissipation structure. The semiconductor die is disposed on the substrate. The lid is disposed on the substrate and covers the semiconductor die. The lid has an opening to expose the semiconductor die. The liquid metal is disposed on the semiconductor die. The gel is disposed between the semiconductor die and the lid. The thermal dissipation structure is disposed on the lid and covers the opening. The semiconductor die, the gel and the thermal dissipation structure form a closed space for accommodating the liquid metal.







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