METHODS FOR GROWING SINGLE CRYSTAL SILICON INGOTS THAT INVOLVE SILICON FEED TUBE INERT GAS CONTROL - Patent 4460593

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EP 4 460 593 A1

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(43)	Date of publication:
	13.11.2024 Bulletin 2024/46

(21)	Application number: 23700590.5

(22)	Date of filing: 05.01.2023

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International Patent Classification (IPC):

C30B 15/00^(2006.01)

C30B 29/06^(2006.01)

(52)	Cooperative Patent Classification (CPC):
	C30B 15/002; C30B 29/06

(86)	International application number:
	PCT/EP2023/050146

(87)	International publication number:
	WO 2023/131634 (13.07.2023 Gazette 2023/28)

(84)	Designated Contracting States:
	AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC ME MK MT NL NO PL PT RO RS SE SI SK SM TR
	Designated Extension States:
	BA
	Designated Validation States:
	KH MA MD TN

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Priority:

06.01.2022 US 202217570141
06.01.2022 US 202217570146

(71)	Applicant: GlobalWafers Co., Ltd.
	Hsinchu (TW)

(72)	Inventors:
	PANNOCCHIA, Matteo 39012 Sinigo (IT) PORRINI, Maria 39012 Sinigo (IT)

(74)	Representative: Maiwald GmbH
	Elisenhof Elisenstraße 3 80335 München 80335 München (DE)

(54)	METHODS FOR GROWING SINGLE CRYSTAL SILICON INGOTS THAT INVOLVE SILICON FEED TUBE INERT GAS CONTROL