(19)
(11) EP 4 515 542 A1

(12)

(43) Date of publication:
05.03.2025 Bulletin 2025/10

(21) Application number: 22940487.6

(22) Date of filing: 28.04.2022
(51) International Patent Classification (IPC): 
G11C 13/00(2006.01)
(52) Cooperative Patent Classification (CPC):
G11C 13/003; G11C 13/0097; G11C 13/0069; G11C 2213/79; G11C 2213/74; G11C 13/0028; G11C 2213/82
(86) International application number:
PCT/US2022/071987
(87) International publication number:
WO 2023/211511 (02.11.2023 Gazette 2023/44)
(84) Designated Contracting States:
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated Extension States:
BA ME
Designated Validation States:
KH MA MD TN

(71) Applicant: Tetramem Inc.
Fremont, CA 95438 (US)

(72) Inventors:
  • YIN, Wenbo
    Fremont, California 94538 (US)
  • GE, Ning
    Fremont, California 94538 (US)

(74) Representative: MERH-IP Matias Erny Reichl Hoffmann Patentanwälte PartG mbB 
Paul-Heyse-Straße 29
80336 München
80336 München (DE)

   


(54) CROSSBAR ARRAY CIRCUITS WITH 2T1R RRAM CELLS FOR LOW VOLTAGE OPERATIONS