(19)
(11) EP 4 772 004 A1

(12)

(43) Date of publication:
08.07.2026 Bulletin 2026/28

(21) Application number: 24768436.8

(22) Date of filing: 16.08.2024
(51) International Patent Classification (IPC): 
H10D 30/83(2025.01)
H10D 62/17(2025.01)
H10D 30/60(2025.01)
H10D 62/10(2025.01)
(52) Cooperative Patent Classification (CPC):
H10D 62/106; H10D 62/127; H10D 62/343; H10D 30/635; H10D 30/615; H10D 30/831; H10D 62/124
(86) International application number:
PCT/US2024/042689
(87) International publication number:
WO 2025/049133 (06.03.2025 Gazette 2025/10)
(84) Designated Contracting States:
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC ME MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated Extension States:
BA
Designated Validation States:
GE KH MA MD TN

(30) Priority: 01.09.2023 US 202363579972 P

(71) Applicant: Power Integrations, Inc.
San Jose, California 95138 (US)

(72) Inventors:
  • YANG, Kuo-Chang Robert
    Campbell, California 95008 (US)
  • VARADARAJAN, Kamal Raj
    Fremont, California 94538 (US)
  • GEORGESCU, Sorin S.
    Gilroy, California 95020 (US)

(74) Representative: Fish & Richardson P.C. 
Highlight Business Towers Mies-van-der-Rohe-Straße 8
80807 München
80807 München (DE)

   


(54) VERTICAL SILICON CARBIDE METAL OXIDE SEMICONDUCTOR GATE JUNCTION FIELD EFFECT TRANSISTORS