(19)
(11) EP 4 799 197 A2

(12)

(88) Date of publication A3:
11.09.2025

(43) Date of publication:
02.09.2026 Bulletin 2026/36

(21) Application number: 24928632.9

(22) Date of filing: 28.10.2024
(51) International Patent Classification (IPC): 
H01L 21/02(2006.01)
(52) Cooperative Patent Classification (CPC):
H10P 14/2904; H10P 14/2926; H10P 14/3216; H10P 14/3442; H10P 14/3416; H10P 14/22; H10P 14/24
(86) International application number:
PCT/US2024/053175
(87) International publication number:
WO 2025/188374 (11.09.2025 Gazette 2025/37)
(84) Designated Contracting States:
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC ME MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated Extension States:
BA
Designated Validation States:
GE KH MA MD TN

(30) Priority: 26.10.2023 US 202363593393 P

(71) Applicant: The Regents of the University of Michigan
Ann Arbor, Michigan 48109 (US)

(72) Inventors:
  • HU, Mingtao
    Ann Arbor, Michigan 48109 (US)
  • MONDAL, Shubham
    Ann Arbor, Michigan 48109 (US)
  • WANG, Ping
    Ann Arbor, Michigan 48109 (US)
  • WANG, Ding
    Ann Arbor, Michigan 48109 (US)
  • MI, Zetian
    Ann Arbor, Michigan 48109 (US)

(74) Representative: Abraham, Richard et al
Maguire Boss 24 East Street
St. Ives, Cambridgeshire PE27 5PD
St. Ives, Cambridgeshire PE27 5PD (GB)

   


(54) N-POLAR III-NITRIDE SEMICONDUCTORS ON SILICON CARBIDE