(19)
(11) EP 0 097 338 A3

(12) EUROPEAN PATENT APPLICATION

(88) Date of publication A3:
24.10.1984 Bulletin 1984/43

(43) Date of publication A2:
04.01.1984 Bulletin 1984/01

(21) Application number: 83105935

(22) Date of filing: 16.06.1983
(84) Designated Contracting States:
CH DE FR GB IT LI NL SE

(30) Priority: 18.06.1982 JP 10375682

(71) Applicants:
  • HITACHI, LTD.
     ()
  • HITACHI HARAMACHI SEMI-CONDUCTOR LTD.
     ()

(72) Inventors:
  • Ohzeki, Shoichi
     ()
  • Mukai, Toji
     ()
  • Miyakawa, Nobuaki
     ()
  • Ikeda, Takahide
     ()

   


(54) Reference voltage generating device


(57) A reference voltage generating device comprises a first MOS transistor whose gate electrode (3011) is formed of an N-type semiconductor of a semiconductive material and a second MOS transistor whose gate electrode (3021) is formed of an intrinsic semiconductor (3021) of the same semiconductor material. In the device, the voltage corresponding to the difference between the Fermi energy levels of the semiconductors (3011, 3021) is derived utilizing the threshold voltage difference (Vthi - Vthn +) between the first and second MOS transistors.







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