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(11) | EP 0 097 338 A3 |
(12) | EUROPEAN PATENT APPLICATION |
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(54) | Reference voltage generating device |
(57) A reference voltage generating device comprises a first MOS transistor whose gate
electrode (3011) is formed of an N-type semiconductor of a semiconductive material
and a second MOS transistor whose gate electrode (3021) is formed of an intrinsic
semiconductor (3021) of the same semiconductor material. In the device, the voltage
corresponding to the difference between the Fermi energy levels of the semiconductors
(3011, 3021) is derived utilizing the threshold voltage difference (Vthi - Vthn +) between the first and second MOS transistors. |