[0001] This invention relates to an element which may be used either as an electron emitting
device or as a light emitting device. In particular one or more elements may be used
as thermionic cathodes in a thermionic valve such as a cathode ray tube or as light
emitting devices in, for example, a display.
[0002] The physical phenomenon of thermionic emission is exhibited by a metal heated above
a characteristic threshold temperature. When a metal is heated. such that the energy
of electrons within the metal exceeds the value of the thermionic work function characteristic
of the metal, electrons escape from the metal and form a space charge. A thermionic
valve utilises the space charge to set up a current flow, in the form of electrons
travelling in a vacuum, from a hot metal (a thermionic cathode) to a relatively positively
charged anode. The flow of electrons may be altered by means of a control grid interposed
in the electron flow.
[0003] The advent of semiconductor technology and circuit integration has led to a marked
reduction in the general use of thermionic valves. Particular forms of thermionic
valve are however much used in special applications.
[0004] One such particular form is the cathode ray tube.
[0005] The cathode ray tube is an image forming thermionic valve which has commercial application
not only in the domestic market as the major component of television receivers but
also in research and industry as the major component of oscilloscopes.
[0006] In broad terms a cathode ray tube comprises an evacuated glass envelope, one end
of which is formed into a screen. .At the opposite end of the tube is located an assembly
for producing a stream of electrons ("a cathode ray"). This assembly is commonly known
as an electron gun and comprises a thermionic cathode, a control grid and at least
one anode. The thermionic cathode produces a space charge of electrons, which electrons
are accelerated away from the cathode by the positive charge of the accelerating anode.
The speed and therefore the kinetic energy of the electrons may be controlled by a
negatively biased control grid. A. fine beam of electrons is required and further
anodes are usually provided which create an anisotropic electrostatic field tending
to. focus the electron beam in a manner analogous to the focusing of light rays by
a lens. After leaving the electron gun, the beam of electrons is subjected to a deflecting
force. This may be an electrostatic force, in which case the beam is caused- to pass
between two mutually perpendicular pairs of plates. The plates may be charged in order
to deflect the beam of electrons in one or both of two perpendicular axes. This method
of deflecting the electron beam in a cathode ray tube is commonly used in oscilloscopes.
[0007] In an alternative arrangement, the electron beam is caused to pass through the field
of electromagnets capable of creating perpendicular electromagnetic fields. The electromagnets
are usually located outside the glass envelope of the cathode ray tube. The application
of current to the electromagnets allows deflection of the electron beam in one or
both of two perpendicular axes. This method of deflection is commonly used in cathode
ray tubes where a continuous raster scan is required (as, for example, in a television
picture tube).
[0008] The electron beam finally impinges upon a phosphor screen where the kinetic energy
of the electrons comprising the beam is converted into light.
[0009] The conventional miniature. thermionic catbode. structure is generally a coil of
metal wire of high melting point. The coil is supported at either end by its electrical
connection to the electron gun assembly. Typically, such a miniature cathode is constructed
from a wire of 20 microns in diameter and 10 millimeters in length. The cathode is
commonly made of tungsten which requires to be heated to about 1100 K in order to
produce a satisfactory flux of electrons. The operating temperature: may be reduced
to about 900 K by adding a coating which reduces the effective thermionic work function
of the wire. A commonly used coating is a mixture of carbonates.
[0010] A miniature thermionic. cathode of the type described immediately above consumes
a considerable amount of power at its operating temperature. For example, a coated
tungsten thermionic cathode of the dimensions given will consume about 50mW at 900
K. Only a fraction of this power goes directly to provide the energy to liberate electrons
from the cathode material. The majority of the power taken by the cathode is dissipated
as heat by conduction and radiation . An object of the present invention is to reduce
the power losses and also to provide a cathode of reduced overall size.
[0011] Recent advances in solid state circuitry have provided the technology to produce
layer structures of intricate, yet well defined, physical shape. In particular, it
is possible to produce complex multi-layered structures, by known miniconductor fabrication
techniques (such as material oxidation, deposition and selective etching) which may,
for example, operate as complete electronic circuits. This technology has been adapted
to produce the element of the present invention.
[0012] The element of the invention may be used as a thermionic cathode replacing the known
cathodes in thermionic devices as described above, or, as we have now discovered,
by increasing the power supplied to the element, it may be used as an incandescent
light source providing a light emitting device of small dimensions for use, for example,
in a direct display device.
[0013] According to a broad, first, aspect of the present invention, we provide an element
for use as a thermionic cathode and/or a light emitting device comprising a semiconductor
substrate, a metal layer, and a support . layer interposed between the semiconductor
substrate and the metal layer, wherein the semiconductor substrate is provided with
a recess across which recess extends a bridge structure comprising the support layer
and/or the metal layer.
[0014] In use, an electrical current is passed through the metal layer, the current resistively
heating the metal to a temperature at which thermionic emission and/or light emission
occurs.
[0015] The recess is formed such that the bridge structure is physically separated from
the semiconductor substrate. As examples, the recess may be in the form of a hollow
or groove formed in the surface of the semiconductor substrate, or a hole passing
through the semiconductor substrate. The bridge structure may take the form of a narrow
linear strip of the metal layer attached to a support layer of similar shape, a broad
band of support material to which is attached a metal layer in the form of a sinuous
strip or a region of support material having attached thereto a metal layer in the
form of a sinuous strip, the region of support material overlying the recess and being
supported by three or more support arms.
[0016] The bridge structure is preferably formed such that it does not completely occlude
the recess in the semiconductor material. In this way, when the element of the present
invention is used as a thermionic cathode, in an evacuated envelope, a vacuum surrounds
the bridge structure reducing conduction of heat from the heated metal layer. Energy
losses due to conduction of heat to the semiconductor substrate are minimised due
to the preferred construction of the bridge.
[0017] When the element is used as a light-emitting device, it may be enclosed in an evacuated
envelope or in an envelope containing a. low pressure: gas or an inert gas.
[0018] The metal layer is preferably nickel or tungsten.
[0019] Most preferably when the element is used as a thermionic cathode, the metal layer
is provided with a coating capable of reducing the effective thermionic work function
of the metal layer.
[0020] Preferably, the metal layer of the bridge structure is about 5 microns wide and hence,
in order to maintain mechanical stability of the metal layer, the support material
must not only be physically strong but must also be capable of remaining mechanically
stable at the temperatures required to cause the metal layer to exhibit thermionic
emission. Where the metal layer is tungsten, the support layer must remain mechanically
stable up to at least 1100 K. Preferably the semiconductor substrate is silicon. Preferably
the support material is silicon dioxide or silicon nitride. These materials may be
readily formed in a layer structure using processes known per se in the art. The bridge
structure may be formed using the process of anisotropic etching, or chemical milling.
[0021] Preferably, the element of the present invention includes integrated circuitry upon
the semiconductor substrate. For example when used as a thermionic cathode, the element
may have circuit elements for providing cathode drive included on the semiconductor
substrate. Similarly, when the element is used as a light emitting device the substrate
may include circuitry for providing a current supply to the element.
[0022] In a second aspect of the invention, we provide a thermionic valve including a thermionic
cathode the thermionic cathode comprising at least one element of the present invention.
Most preferably the thermionic valve is a cathode ray tube. The element of the present
invention may be made in such a way that its overall size is of the order of 50 microns
square and having a very low power consumption. It is therefore of great utility for
small size, low power consumption cathode ray tubes.
[0023] Preferably, therefore, we provide a display device comprising a thermionic cathode
assembly provided with at least one element of the first aspect of the invention a
screen coated with a substance capable of converting the kinetic energy of electrons
impinging on the screen into light, a grid assembly interposed between the cathode
assembly and the screen, and an anode for accelerating. electrons from the cathode
to the screen.
[0024] Preferably the screen is a phosphor screen.
[0025] The cathode assembly, grid assembly, screen and anode are enclosed in a vessel at
reduced pressure, preferably substantially evacuated.
[0026] Preferably the display device is further provided with cathode ray deflection means
for deflecting a beam of electrons produced by the cathode 'to a predetermined point
on the phosphor screen. The deflection means may be electromagnetic or electrostatic
means, such as those known in the art. In addition one or more focusing anodes may
be provided.
[0027] In this preferred embodiment, the cathode assembly may comprise a single element
of the invention, to act as a thermionic cathode in-the. display device. If required,
a number- of elements may be closely packed to afford an increased flux density of
thermal electrons. Multibeam display devices for use for example in dual beam oscilloscopes
and three electron gun colour television tubes may be produced using either two or
more cathode assemblies or one cathode assembly provided with suitably spaced elements
of the invention.
[0028] A plurality of elements of the invention may together form a matrix of elements,
on a single wafer of semiconductor material. The term "matrix" as used herein refers
to a number of elements of the. invention arranged in a geometric pattern, preferably
as one or more rows and/or columns most preferably linear rows and columns. Such a
matrix may be formed using, for example the anisotropic etching process mentioned
above.
[0029] In a third aspect of the invention we provide a display device comprising a thermionic
cathode assembly provided with a matrix of elements of the invention, a screen coated
with a substance capable of converting the kinetic energy of electrons impinging on
the screen into light and an anode for accelerating electrons from the cathode assembly
to the screen.
[0030] Preferably the display device includes a grid assembly interposed between the screen
and the cathode assembly.
[0031] Preferably the screen is a phosphor screen.
[0032] A particular and great advantage of this aspect of the invention is that a matrix
of electron beams may be produced by a cathode assembly, each element in the matrix
producing thermal electrons which. may be accelerated towards a phosphor screen. such.
that. each electron beam thus produced forms a picture element (pixel) upon the. screen.
In this way the need for deflection means. is flbviated.In conventional cathode ray
tubes the distance from the cathode to the screen must be sufficiently large for the
deflection applied to the beam to produce a significant displacement of the point
at which the beam impinges upon the screen. This has in the past limited the reduction
in 'front to back' dimensions of cathode ray tubes. A cathode ray tube of this embodiment,
by negating the need for deflection of the beam provides a' tube of greatly reduced
'front to back' dimension relative to a conventional. cathode ray tube.
[0033] Preferably the matrix of elements forming the cathode assembly is arranged such that
each element in the matrix is provided with an independent curent flow. For example,
.the matrix of elements may be addressed by a. digital logic circuit and suitable.
drive circuits. The drive circuits cause s curreat to flow through each addressed
element: thcereby heating the element. by means of resistance heating-The hot element,
acting as a thermionic cathade, will then emit thermal electrons which may be accelerated
towards the phosphor screen, past the grid. The grid is, in this embodiment, preferably
provided with an even potential over its surface. Therefore light produced by electrons
impinging upon the phosphor screen will be produced in a matrix of pixels corresponding
to the elements which are addressed. An image may therefore be built up by addressing
those elements in the cathode assembly which correspond to the pixels it is desired
to produce on the phosphor screen. The low thermal mass of the individual elements
in the cathode assembly ensures that the individual cathodes heat up and cool down
very rapidly thereby allowing a rapid change in the image produced on the phosphor
screen. The intensity of each pixel produced on the pliosphor screen may be controlled
by adjusting the current supplied to the relevant element in the cathode assembly.
Preferably however the intensity of each pixel is adjusted by adjusting the potential
difference between the grid and the cathode assembly. Colour images may be built up
by providing a matrix of different phosphors on the phosphor screen. For example adjacent
elements in the cathode assembly may correspond to phosphors producing red, green
or blue light in response to energy supplied by impinging electrons.
[0034] Preferably the matrix of elements is addressed. such that each element in a row of
the- matrix is supplied with an equal current flow and the grid assembly comprises
a number of independent grid elements each corresponding to a column of the elements
forming the cathode assembly. Each grid element may be addressed separately such that
the combined effect of addressing the elements in rows of the cathode assembly and
the grid elements in columns of the grid assembly provides a method of selecting,
for example, the intensity of each point produced by the matrix of elements. The terms
row and column are of course interchangeable in respect of the cathode assembly drive
and the grid assembly drive.
[0035] In a further preferred embodiment, each element in the cathode assembly is provided
with substantially equal current flow, the grid assembly forming a matrix of grid
elements, to each element of which may be applied an independent bias potential. Each
grid element corresponds to a thermionic cathode in the cathode assembly, whereby
by addressing the grid, e.g. using digital circuitry and, if necessary, drive circuits,
the kinetic energy of electrons produced by each cathode in the cathode assembly may
be individually adjusted thereby- adjusting the intensity of light produced on the
phosphor screen.
[0036] The display devices may be used in for example so called flat screen televisions
or alphanumeric displays.
[0037] In a fourth aspect of the invention we provide a display device comprising one or
more light emitting devices the or each light emitting device consisting of an element
of the first aspect of the invention. Preferably the display device comprises a plurality
of light emitting devices most preferably arranged to provide a matrix of light emitting
devices. Preferably the light emitting devices are enclosed in a suitable enveloge.
A suitable envelope may include for example an evacuated envelope or an envelope having
an inert atmosphere.
[0038] Individual light emitting devices in the matrix may be addressed using, for example,
digital. circuitry and drive circuitry. The light emiasion from each light emitting
device may be controlled by the current passed to each device. Each device has a low
thermal mass which allows modulation of the emitted light intensity at a relatively
high frequency. The display device may be provided with a screen of colour filters
thereby allowing a coloured image to be produced. A matrix may be used for example
to produce a flat screen television or an alphanumeric display.
[0039] The various aspects of this invention are now described, by way of example, with
reference to the accompanying drawings, in which:-
Figure 1 is a plan view of one embodiment of a single element of the invention,
Figure 2 is. a section on the. line A-A of Figure
Figure 3. is a plan view of a.. second embodirnent of a single element of the invention,
Figure 4 is a section on the line B-B of Figure
Figure 5 is a plan view of a third embodiment of a single element of the invention,
Figure 6 is a side. elevation of a thermionic cathode in combination with a control
grid assembly,
Figure 7 is a schematic isometric view of a display device of the third aspect of
the invention,
Figure 8 is a schematic isometric view of a further embodiment of a display device
of the third aspect of the invention, and
Figure 9 is a. schematic isometric view of yet a further embodiment of a display device
of the third aspect of the invention.
[0040] Referring to the simple embridiment of the invention shown in Figures 1 and 2, a.
silicon substrate 1 provides mechanical support for the element, which may be a cathode
or a light emitting device. The substrate is of a type now well known in the electronics
industry as a semicondactor substrate upon which integrated circuits are constructed.
The silicon substrate 1 is provided with a recess 3 in the form of a depression etched
into the surface of the substrate by anisotropic etching. A layer of silicon dioxide
(or silicon nitride) 5. overlies the surface of the silicon and is so shaped as to
form a narrow bridge 7 over the recess 3. A layer of tungsten metal 9 lies over the
silicon dioxide layer such that the cross sectional area of the layer is. at its lowest
in that part of the layer overlying; the silicon .dioxide layer forming the bridge
7.This ensures that the maximum resistive heating of the metal. layer is concentrated
in the bridge region.
[0041] The layer of silicon dioxide (or silicon nitride) 5 shown in Figure 1 is shaped to
correspond to the shape of the layer of tungsten metal 9. In practice the silicon
dioxide layer may cover the surface of the silicon substrate 1 except for regions
adjacent the bridge structure, which allow communication between the recess 3 and
the surrounding.
[0042] In use, the element, if it is to be a thermionic cathode, is placed within an evacuated
envelope and a current is passed through the metal layer 9. Resistive heating of the
metal layer in the bridge area occurs and the metal is heated to a temperature sufficient
to cause thermionic emission. This will typically be 1100 K for a tungsten conductor
or 900K for a carbonate coated tungsten conductor.The recess 3 reduces the loss of
energy by conduction into the substrate. arid the low cross sectional area made possible
by the supported conductor reduces conduction and consequent heat loss through the
conductor itself.
[0043] Figures 3 and 4 show a second embodiment of the first aspect of the invention in
which the techniques of anisotropic stehing have been used to form a silicon substrate
11, provided with a recess 13. A layer of silicon dioxide (or silicon nitride) 15
overlies the silicon substrate forming a bridge 17 over the recess 13 such that the
recess is not completely enclosed. A conductor 19 of tungsten has . been deposited
upon the silicon dioxide (or silicon nitride) layer and has been etched to pravide
a narrow sinuous. conductor portion. 21 on the bridge: 17. In this embodiment, the
recess is square in plan with an edge measuring about 50 microns. The narrow conductor
portion has a width of about 5 microns. The advantage of an etched conductor pattern
of. this type is that the operating voltage of the element can be tailored to a convenient
value.
[0044] Figure 5 shows a third embodiment of the first aspect of the invention. The third
embodiment comprises a silicon substrate provided with a recess (these being substantially
as described above). The silicon substrate is overlain with a support layer 75 of
silicon dioxide or silicon nitride. The supgort. layer 75 is provided with apertures
77 communicating with the recess formed in the silicon substrate, such that a suspended
region 79 of the support layer 75 is formed. The region 79 is suspended above the
recess by four arms 81, 83, 85 and 87 formed of the support layer 75. A conductor
89 has been deposited upon the support layer 75 and has been etched to provide a relatively
narrow, sinuous conductor portion 91 on the suspended region 79 of the support layer
75. Electrical connection to the conductor portion 91 is made by way of connector
portions 93 and 95 passing over arms 81 and 83 respectively. Connector portions 93
and 95 pass over opposed arms 81 and 83 in order to reduce mechanical distortion which
may otherwise occur during resistive heating of conductor portion 91. Arms 85 and
87 may be provided with dummy strips 97 and 99 (shown in broken line outline) of the
same material as the connector. portions 93 and 95 in order further to reduce possible
mechanical distortion. It will be appreciated that connector portions 93 and 95 could
pass over different arms from those shown, and that the number of arms may be different,
although at least three should be provided for adequate support.
[0045] Figure 6 shows a thermionic cathode of the present . invention (shown generally at
25) in combination with a control grid assembly (shown generally at. 27) and- exemplifies
a possible mounting technique for the thermionic cathode- of the presenti invention.
The control grid assembly 27 comprises a ceramic plate 29 having a metal coating on
its front and . rear faces. The ceramic plate 29 is provilded with an aperture 31
passing through both the plate and metal coatings, perpendicular to the general. plane
of the plate. The thermionic cathode 25 is provided with electrically conductive protusions
33, e.g. of solder or conductive paste, which can be used to connect the thermionic
cathode 25 to the grid assembly 27 and which make electrical contact between the metal
layer of the thermionic. cathode 35 and the rear metal coated face 37 of the grid
assembly 27. The rear metal coated face 37 of the grid assembly 27 therefore is at
the same potential as the thermionic cathode in use. The thermionic cathode 25 is
aligaed such that, in use, electrons emitted by the thermionic cathode pass through
the aperture 31 under the influence. of a positive potential provided by an anode
(not shown). The front metal coated face 39 of the grid assembly 27 forms a control
grid which may be used to alter the flow of electrons from the cathode. In use, the
front metal coated face 39 would normally be negatively biased with resgect to the
cathode. The advantage of this mounting system is that the cathode and grid are maintained
at a fixed spacing and alignment. This has attendant advantages not only in terms
of the mechanical strength of the arrangement but also in terms of ease of manufacture.
[0046] Referring to Figure 7 there is depicted a display device of the invention. The display
device comprises a cathode assembly 39, as phosphor screen 41, and a grid assembly
43 interposed between the cathode assembly 39 and the phosphor screen 41.
[0047] The cathode assembly 39 comprises a silicon substrate 45 upon which is formed a plurality
of elements of the invention (for example 47). Each element of the invention acts
as a thermionic cathode. -The. thermionic cathodes 47 are arranged in an array or
matrix. The matrix depicted in Figure 7 has only nine rows and twelve columns for
the purpose of ready illustration. In practice the matrix may possess a large number
of rows and columns limited only by physical constraints of manufacture.
[0048] The grid assembly 43 comprises a perforate .plate. The construction of the grid assembly
is as shown in Figure 6, an insulating plate being provided with a metal coating (not
shown) on its front and rear faces. The grid. assembly is provided with a plurality
of grid apertures (for example 49) capable of allowing passage of electrons. Each
aprerture 49 in the grid assembly 43 corresponds spatially with a thermionic cathode
47 in an equivalent row and column in the cathode assembly 39.
[0049] The phosphor screen 41 comprises a transparent support material to the side facing
the grid assembly of which is affixed a coating of a phosphor material capable of
converting electron kinetic energy into visible light. The phosphor coating is either
of one type, capable of generating the same colour of visible light over the surface
of the phosphor screen 41 or is comprised of regions of a number of different phosphors
each different phosphor being capable of generating a different colour of visible
light. Such phosphor screens are well known in the art and are therefore not further
described.
[0050] The cathode assembly 39, the grid assembly 43 and the phosphor screen 41 are enclosed
in an evacuated envelope (not shown). The envelope also encloses an accelerating anode
(not shown) disposed between the grid assembly 43 and the phosphor screen 41. The
phosphor screen 41 may form part of the envelope. The transparent support material
of the phosphor screen may comprise a transparent electrically conducting material
and may form the accelerating anode. A suitable material is, for example, a coating
of tin oxide.
[0051] In use, the accelerating anode is maintained at high positive potential relative
to the cathode assembly 39. Each thermionic cathode 47- in the cathode assembly 39
is capable of being separately supplied with an electrical current by means of address
logic and drive circuitry which may be located outside the envelope or may be included
within the envelope, for example, upon the sllicon substrate 45 of the cathode assembly-
When a current is passed through the thermionic cathodes 47, they are heated to a
temperature at which thermionic emission of electrons occurs. The electrons are accelerated
away from the cathode assembly 39 by the high positive potential of the accelerating
anode. Electrons produced by each thermionic cathode 47 pass through the corresponding
aperture 49 in the grid assembly 43 and onwards to the phosphor screen 41 where their
kinetic energy is converted into visible light by the phosphor. In this way each thermionic
cathode 47 when supplied with current produces a point of light on the phosphor screen
41, each point of light forming a picture element or pixel of an image to be formed
on the phosphor screen 41. An image may therefore be produced on the phosphor- screen
41 by selectively addressing and supplying current to those thermionic cathodes in
the cathode assembly 39 corresponding to the desired pixels of the image. The intensity
of each pixel may be individually altered by varying the voltage between the grid
43 and the selected thermionic cathode. For example the thermonic cathodes may be
sequentially addressed and a synchronous video signal may be applied to the grid to
produce a picture. The thermionic cathodes are about 5 microns across and may be spaced
as little as 10 microns apart. In this way a high definition image may be produced
on the phosphor screen 41. Suitably the display device of the invention may be used
to display a rapidly changing, high definition image, for example a television picture.
[0052] In the schematic arrangement depicted in Figure 7 considerable spacing of the cathode
assembly 39, the grid assembly 43 and the phosphor screen 41 is shown. In practice
the cathode assembly 39 and the grid assembly 43 are in close proximity and may be.
in actual physical contact as degicted for one thermionic cathode and one grid assembly
in Figure 6. The grid assembly 43 and the phosphor screen 41 are separated. However
in order to minimise the cross sectional area of the pixels formed upon the phosphor
screen 41 it is desirable to reduce the distance between the cathode assembly 39 and
the phosphor screen 41 as much as possible. The electron beam produced by each thermionic
cathode will tend to spread as it passes from the cathode assembly 39 to the phosphor
screen 41 and it is desirable to obviate the need for separate focussing anodes if
possible although they may be included if necessary. The grid sssembly 43 tends to
reduce the cross sectional area of each electron beam. If however the cathode assembly
and the phosphor screen are close together the requirement for a grid assembly may
be obviated Such a construction may be preferred for alphanumeric displays.
[0053] Referring now to Figure 8 there is depicted a further embodiment of the display device
of the invention. In general arrangement this embodiment resembles the display device
described above with reference to Figure 7. The display device again comprises a cathode
assembly 51, a phosphor screen 53 and a grid assembly 55 interposed between the cathode
assembly 51 and the phosphor screen 53. Differences arise however in the addressing
of the thermionic cathodes 57 of the cathode assembly 51 and in the construction of
the grid assembly 55. The remaining common features are as described above with reference
to Figure 7. In the embodiment of Figure 8 each row of thermionic cathodes 57 is linked
such that in use the same current flows in each thermionic cathode of a row. The grid
assembly 55 comprises a number of electrically separate grid elements 59 each grid
element 59 being common for a column of grid apertures 61. Each row of thermionic
cathodes in use is separately supplied with an electrical current by means of address
logic and drive circuitry- Each grid element 59 may be separately supplied with an
electrical potential. By supplying current successively to each row of thermionic
cathodes 57 and appropriate bias to each grid element 59 a scanned image may be formed
upon the phosphor screen 53. The intensity of each pixel forming the image may be
adjusted by varying either the current passing through each row of thermionic cathodes
57 or preferably by varying the negative potential. applied. to each grid element
59. In a particular embodiment the display device is used to produce a television
picture, the grid elements 59 being scanned at line scan speed, the. rows of thermionic:
cathodes being scanned at frame scan speed, pixel intensity being varied by the value
of negative potential applied to each grid element 59.
[0054] Referring now to Figure 9 there is depicted a further embodiment of the display device
of the: invention. In general arrangement this embodiment resembles the display device
described above with reference to Figure 7. The display device again comprises a cathode
assembly 63, a phosphor screen 65. and a grid assembly 67 interposed between the cathode
assembly 63 and the phosphor screen 65. Differences arise however in the addressing
of the thermionic cathodes 69 of the cathode assembly 63 and in the construction of
the grid assembly 67. The remaining common features are as described above with reference
to Figure 7. In the embodiment of Figure 9 in use each thermionic cathode 69 is provided
with the same current flow such that each thermionic cathode produces substantially
the same flux of thermal electrons. The grid assembly 67 comprises a number of electrically
separate grid elements 71 each grid element 71 being associated with a single grid
aperture 73. Each grid element 71 may be separately supplied with an electrical potential
by means ot address logic and if necessary suitable drive circuitry. In this way the
intensity of each pixel formed on the phosphor screen 65 may be independently varied
by varying the negative potential applied to each grid element 71.
[0055] In a final embodiment, the elements of the invention are employed as individual light:
emittiug devices. A direct display device of the fourth aspect of the invention comprises
a matrix of elements of the invention resembling for example the structure shown generally
at 39 in Figure 7. The matrix of light emitting devices is enclosed in a suitable
envelope filled with a low pressure inert gas and provided with a transparent window
in front of the matrix. The individual light emitting devices comprising the matrix
may be separately supplied with an electrical current by suitable address logic and
drive circuits. The intensity of light produced by each light emitting device may
thereby be independently varied such that an image may be produeed by the composite
light emitting devices forming the matrix. The preferred method of forming each light
emitting device is anisotropic etching as described above. This advantageously provides
a mirror surface behind each light emitting device reflecting most of the light produced
by the incandescent element in a forward direction- The low thermal mass of light
emitting devices of the invention allows for a rapid modulation of the light intensity
of the devices. This enables a rapidly changing image to be produced by the direct
display device. Line and frame storage techniques may also be used to reduce the number
of and/or speed of switching cycles for the light emitting devices. The direct display
device may therefore be useful as a display for a television picture. A coloured display
may be produced by providing colour filters in or on the window of the direct display
device.
[0056] In all of the above described aspects and embodiments of this invention, the bridge
structure over the recess etched in the silicon substrate has comprised a support
layer (e.g. of silicon dioxide or silicon nitride) which supports the metal layer.
In a modified construction, it is possible to dispense with the support layer by completely
etching it away in the area of the recess. Such a modified construction could be used
for simple cathode structures, especially if they are used to produce incandescent
devices.
1. An element for use as a thermionic cathode and/or a light emitting device comprising
a semiconductor substrate (1), a metal layer (9) and a support layer (5) interposed
between the semiconductor substrate (1) and the metal layer (9), wherein the semiconductor
substrate (1) is provided with a recess (3) across which recess extends a bridge structure
(7) comprising the support layer (5). and/or the metal layer (9).
2. An element according to claim 1 wherein the bridge structure (7) is in the form
of a narrow linear strip of the metal layer (9) attached to a support layer of similar
shape.
3. An element according to claim 1 wherein the bridge structure comprises a broad
band (17) of support material to which is attached a metal layer in the form of a
sinuous strip (21').
4. An element according to claim 1 wherein the bridge structure comprises a region
of support material (79) having attached thereto a metal layer (19) in the form of
a sinuous strip (91), the region of support material overlying the recess (77) and
being supported by three or more support arms (81, 83, 85 or 87).
5. An element according to any one of claims 1-4 wherein the bridge structure (7)
is formed such that it does not completely occlude the recess (3) in the semiconductor
material (1).
6. An element according to any one of claims 1-5, said element being enclosed in an
evacuated envelope.
7. An element according to any one of claims 1-5, said element being enclosed in an
envelope containing a low pressure gas or an inert gas.
8. An element according to any one of the preceding claims, wherein the metal layer
is nickel or tungsten.
9. An element according to any one of the preceding claims wherein the metal layer
is provided with a coating capable of reducing the effective thermionic work function
of the metal layer.
10. An element according to any one of the preceding claims wherein the metal layer
of the bridge structure is about 5 microns wide.
11. An element according to any one of the preceding claims wherein the support layer
is such as to remain mechanically stable up to at least 1100 K.
12. An element according to any one of the preceding claims wherein the semiconductor
substrate (1) is silicon.
13. An element according to any one of the preceding claims wherein the support material
is silicon dioxide or silicon nitride (15).
14. An element according to any one of the preceding claims and including integrated
circuitry upon the semiconductor substrate.
15.... A thermionic valve including a thermionic cathode (25) which comprises at least
one element as claimed in any one of claims 1-14.
16. A thermionic valve as claimed in claim 15 and which comprises a cathode ray tube.
17. A display device comprising a thermionic cathode assembly (25) provided with at
least one element as claimed in any one of claims 1-14, a screen (not shown) coated
with a substance capable of converting the kinetic energy of electrons impinging on
the screen into light, a grid assembly (27) interposed between the cathode assembly
(25) and the screen, and an anode (not shown) for accelerating electrons from the
cathode to the screen.
18. A display device according to claim 17 wherein the screen is a phosphor screen.
19. A display device according to claim 17 or 18 wherein the cathode assembly, grid
assembly, screen and anode are enclosed in a vessel at reduced pressure.
20. A display device according to claim 17, 18 or 19 which is further provided with
cathode ray deflection means for deflecting a beam of electrons produced by the cathode
to a predetermined point on the phosphor screen.
21. A display device according to claim 20 wherein the deflection means comprises
electromagnetic or electrostatic means.
22. A display device according to any one of claims 17-21 wherein one or more focusing
anodes is/ are provided.
23. A display device according to any one of claims 17-22 wherein the cathode assembly
has a number of elements (47) as claimed in any one of claims 1-14 which are closely
packed to afford an increased flux density of thermal electrons.
24. A display device comprising a thermionic cathoqe assembly (39) provided with a matrix of elements (47) as claimed in any one of claims
1-14 formed on a single wafer of semiconductor material (45), a screen (41) coated
with a substance capable of converting the kinetic energy of electrons impinging on
the screen into light and an anode (not shown) for accelerating electrons from the
cathode assembly (39) to the screen (41).
25. A display device according to claim 24 which further includes a grid assembly
(43) interposed between the screen (41) and the cathode assembly (39).
26. A display device according to claim 25 wherein the screen is a phosphor screen.
27. A display device according to claim 24, 25 or 2B wherein the matrix of elements
(47) forming the cathode assembly (39) is arranged such that each element in the matrix
is provided with an independent current flow.
28. A display device according to claim 27 wherein the matrix of elements (47) is
addressed by a digital logic circuit and suitable drive circuits, whereby the drive
circuits cause a current to flow through each addressed element thereby heating the
element by means of resistance heating, so that each hot element acts as a thermionic
cathode and emits thermal electrons which may be accelerated towards the phosphor
screen (41) past the grid (43).
29. A display device according to claim 28 wherein the grid (43) is provided with
an even potential over its surface so that light produced by electrons impinging upon
the phosphor screen (41) will be produced in a matrix of pixels corresponding to the
elements which are addressed.
30. A display device according to claim 29 wherein the intensity of each pixel produced
on the phosphor screen (41) is controlled by adjusting the current supplied to the
relevant element (47) in the cathode assembly (39).
31... A display device according to claim 29 wherein the intensity of each pixel is
adjusted by adjusting the potential difference between the grid (49) and the cathode
assembly (39).
32. A display device according to any one of claims 24-31 wherein colour images may
be built up by providing a matrix of different phosphors on the screen.
33. A displaytdevice according to claim 24,25,26 or 27 wherein the matrix (51) of elements(57)
is addressed such that each element (57) in a row of the matrix is supplied with an
equal current flow and the grid assembly comprises a number of independent grid elements
(59) each corresponding to a column of the elements forming the cathode assembly (51).
34. A display device according to claim 33 wherein each grid element (59) is addressed
separately such that the combined effect of addressing the elements (57) in rows of
the cathode assembly (51) and the grid elements (59) in columns of the grid assembly
(55) provides a method of selecting, for example, the intensity of each point produced
by the matrix (51) of elements (57). -
35. A display device according to claim 24,25,26 or 27 wherein each element (69) in
the cathode assembly (63) is provided with substantially equal current flow, the grid
assembly (67) forming a matrix of grid elements (71), to each element of which is
applied an independent bias potential, the arrangement being such that each grid element
corresponds to a thermionic cathode in the cathode assembly, whereby by addressing
the grid (67) the kinetic energy of electrons produced by each cathode in the cathode
assembly may be individually adjusted thereby adjusting the intensity of light produced
on the phosphor screen (65).
36. A display device comprising one or more light emitting devices, the or each light
emitting device consisting of an element as claimed in any one of-claims 1-14.
37. A display device according to claim 36 which further comprises a plurality of
light emitting devices arranged to provide a matrix.
38. A display device according to claim
37 wherein the light emitting devices are enclosed in a suitable envelope which is
evacuated or has an inert atmosphere.
39. A display device according to claim 37 or 38 wherein individual light emitting
devices in the matrix are addressed using digital circuitry and drive circuitry.
40. A display device according to claim 37, 38 or 39 wherein the light emission from
each light emitting device is controlled by the current passed to each device.
41. A display device according to any one of claims 37-40 which is provided with a
screen of colour filters thereby allowing a coloured image to be produced.