(19)
(11) EP 0 363 163 A3

(12) EUROPEAN PATENT APPLICATION

(88) Date of publication A3:
27.02.1991 Bulletin 1991/09

(43) Date of publication A2:
11.04.1990 Bulletin 1990/15

(21) Application number: 89310127.9

(22) Date of filing: 04.10.1989
(51) International Patent Classification (IPC)5G03F 7/20
(84) Designated Contracting States:
DE FR GB NL

(30) Priority: 05.10.1988 JP 249902/88

(71) Applicant: CANON KABUSHIKI KAISHA
Tokyo 146 (JP)

(72) Inventors:
  • Tanaka, Yutaka
    Yokohama-shi Kanagawa-ken (JP)
  • Mizusawa, Nobutoshi
    Yamato-shi Kanagawa-ken (JP)
  • Amemiya, Mitsuaki
    Atsugi-shi Kanagawa-ken (JP)
  • Kariya, Takao
    Hino-shi Tokyo (JP)
  • Shimoda, Isamu
    Zama-shi Kanagawa-ken (JP)

(74) Representative: Beresford, Keith Denis Lewis et al
BERESFORD & Co. 2-5 Warwick Court High Holborn
London WC1R 5DJ
London WC1R 5DJ (GB)


(56) References cited: : 
   
       


    (54) X-ray exposure apparatus


    (57) An X-ray exposure apparatus for exposing a semiconductor wafer to a mask with X-rays, to print a pattern of the mask onto the wafer, is disclosed. The ambience within a stage accommodating chamber, accommodating a mask, a semiconductor wafer and the like, is replaced by helium and, thereafter, a predetermined quantity of helium is supplied into the stage accommodating chamber. This effectively prevents degradation in purity of helium due to air leakage into the chamber and, therefore, undesirable decrease in quantity of X-ray transmission can be avoided. Thus, high-precision and high-throughput exposure is ensured.







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