Dielectrically isolated substrate and a process for producing the same

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(11)

EP 0 485 720 A3

(12)	EUROPEAN PATENT APPLICATION

(88)	Date of publication A3:
	27.12.1995 Bulletin 1995/52

(43)	Date of publication A2:
	20.05.1992 Bulletin 1992/21

(21)	Application number: 91116150.3

(22)	Date of filing: 23.09.1991

(51)	International Patent Classification (IPC)⁵: H01L 21/76, H01L 21/306, H01L 21/308

(84)	Designated Contracting States:
	DE FR GB

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Priority:

16.11.1990 JP 310722/90

(71)	Applicant: SHIN-ETSU HANDOTAI COMPANY LIMITED
	Chiyoda-ku Tokyo (JP)

(72)	Inventors:
	Katayama, Masatake Takasaki-shi, Gunma-ken (JP) Sato, Makoto Maebashi-shi, Gunma-ken (JP) Ohta, Yutaka Annaka-shi, Gunma-ken (JP) Sugita, Mitsuru, Ryokufu-Dormitory Nishishirakawa-gun, Fukushima-ken (JP) Ohki, Konomu Annaka-shi, Gunma-ken (JP)

(74)	Representative: Grünecker, Kinkeldey, Stockmair & Schwanhäusser Anwaltssozietät
	Maximilianstrasse 58 80538 München 80538 München (DE)

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References cited: :

(54)	Dielectrically isolated substrate and a process for producing the same

(57) A dielectrically isolated substrate is comprised of a single crystal silicon substrate or bond substrate and a single crystal silicon substrate or base substrate bonded together into a composite structure. The bond substrate has a (110) plane as a main crystal plane and is provided with vertically walled moats and substantially parallelogramatical islands positioned adjacent to the moats. The moats and islands result from anisotropic etching using a specific mask pattern. Also disclosed is a process for producing the composite structure.

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