Cold cathode field emission device, process for the production thereof, and cold cathode field emission display

(19)

(11)

EP 1 011 123 A3

(12)	EUROPEAN PATENT APPLICATION

(88)	Date of publication A3:
	21.03.2001 Bulletin 2001/12

(43)	Date of publication A2:
	21.06.2000 Bulletin 2000/25

(21)	Application number: 99403049.2

(22)	Date of filing: 07.12.1999

(51)	International Patent Classification (IPC)⁷: H01J 3/02, H01J 9/02, H01J 1/30, H01J 31/12

(84)	Designated Contracting States:
	AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE
	Designated Extension States:
	AL LT LV MK RO SI

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Priority:

07.12.1998 JP 34739998
13.04.1999 JP 10562999

(71)	Applicant: SONY CORPORATION
	Tokyo (JP)

(72)	Inventors:
	Kubota, Shinji Shinagawa-ku, Tokyo (JP) Kikuchi, Kazuo Shinagawa-ku, Tokyo (JP) Sata, Hiroshi Shinagawa-ku, Tokyo (JP)

(74)	Representative: Thévenet, Jean-Bruno et al
	Cabinet Beau de Loménie 158, rue de l'Université 75340 Paris Cédex 07 75340 Paris Cédex 07 (FR)

(54)	Cold cathode field emission device, process for the production thereof, and cold cathode field emission display

(57) A cold cathode field emission device comprising; (A) a cathode electrode (11) formed on a support (10), (B) an insulating layer (12) formed on the support (10) and the cathode electrode (11), (C) a gate electrode (13) formed on the insulating layer (12), (D) an opening portion (14) which penetrates through the gate electrode (13) and the insulating layer (12), and (E) an electron emitting portion (16^e) which is positioned at a bottom portion of the opening portion (14) and has a tip portion having a conical form and being composed of a crystalline conductive material, the tip portion of the electron emitting portion (16^e) having a crystal boundary nearly perpendicular to the cathode electrode (11) .

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