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(11) | EP 0 897 925 B1 |
| (12) | EUROPEAN PATENT SPECIFICATION |
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A volatile organometallic compound containing a divalent metal and a group 13 metal, process for preparing same, and process for preparing a heterometallic oxide film using same Eine ein zweiwertiges Metall und ein Metall der Gruppe 13 enthaltende flüchtige Organometallverbindung, Verfahren zu deren Herstellung und deren Verwendung zur Herstellung einer Heterometalloxidschicht Composé organométallique volatile contenant un métal divalent et un métal du groupe 13, procédé pour les préparer et leur utilisation pour préparer une couche mince d'un oxyde hétérométallique |
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| Note: Within nine months from the publication of the mention of the grant of the European patent, any person may give notice to the European Patent Office of opposition to the European patent granted. Notice of opposition shall be filed in a written reasoned statement. It shall not be deemed to have been filed until the opposition fee has been paid. (Art. 99(1) European Patent Convention). |
[0001] The present invention relates to a volatile organometallic compound of formula M[(µ-OR')2M'R2]2 wherein M is a divalent element selected from the group consisting of Be, Mg, Zn and Cd; M' is a Group 13 element selected from the group consisting of Al and Ga; with R and R' each being an alkyl group with the proviso that if M is Mg, M' is not Al. The present invention also relates to a chemical vapor deposition(CVD) process for depositing an MM'2O4 type heterometallic oxide film on a substrate using the organometallic compound.
[0002] A heterometallic oxide film of the MM'2O4 type, wherein M is a divalent metal and M' is a Group 13 metal, is a very useful material in the electronics field. For instance, ZnGa2O4 is used as a low voltage phosphor material for a flat panel display device(see I. J. Hsieh et al., Journal of Applied Physics, 76, 3735-3739(1994); L. E. Shea et al., Journal of Electrochemical Society, 141, 2198-2200(1994); and U.S. Patent No. 5,558,814); CdGa2O4 and ZnGa2O4 are promising materials for applications as a transparent electroconductive material (see T. Omata, N. Ueda, N. Hikuma, K. Ueda, H. Mizoguchi, T. Hashimoto, and H. Kawazoe, "New oxide phase with wide band gap and high electroconductivity CdGa2O4 spinel", Applied Physics Letters, 62(5), 499 (1993) ; T. Omata, N. Ueda, K. Ueda and H. Kawazoe, "New ultraviolet transport electroconductive oxide, ZnGa2O4 spinel", Applied Physics Letters, 64(9), 1077(1994)); CaGa2O4 and CaAl2O4 are widely used as a fluorescent material (U.S. Patent Nos. 5,424,006 and 5,725,801); and a single crystal of BeAl2O4 is used as a laser material when doped with chromium(see U.S. Patent No. 5 090 019). Some of these heterometallic oxides are usually prepared in a powder form from simple oxides of constitutive elements. For example, ZnGa2O4 powder is synthesized from a powder mixture of ZnO and Ga2O3. However, it is difficult to prepare a high purity complex oxide, in addition to the handling difficulties in fabricating an electronic device using a high surface area powder.
[0003] Accordingly, a CVD process has been attempted in the preparation of an MM'2O4 type oxide using vaporizable alkoxide precursors such as magnesium aluminum isopropoxide of formula Mg[Al(OPri)4]2. However, it has been reported that this type of alkoxide precursors are prone to undergo disproportionation reactions to form higher molecular weight compounds, e.g., Mg2Al3(OPri)13 (see J. A. Meese-Marktscheffel et al., Chemistry of Materials, 5, 755-757 (1993)). The formation of such high molecular weight compounds causes the problem of lowering the vapor pressure of the precursor during the CVD process.
[0004] WO 97/29112 discloses a volatile magnesium alkylaluminum alkoxide which is deposited as a magnesium aluminate film.
[0005] US-A-5008420 discloses alkoxide precursors for forming spinel upon oxidation on evaporation of a organoaluminum-magnesium alkoxide.
[0006] Accordingly, there is a need to develop a simple, efficient process for the preparation of a high purity heterometallic oxide film of the MM'2O4 type.
[0007] It is, therefore, the object of the present invention to provide a novel organometallic compound which can be advantageously used in a CVD process for depositing a heterometallic oxide film of the MM'2O4 type.
[0008] Said object is achieved by a volatile organometallic compound of formula M[(µ-OR')2M'R2]2 wherein M is a divalent element selected from the group consisting of Be, Mg, Zh or Cd; M' is a Group 13 element selected from the group consisting of Al or Ga; and R and R' are each independently a C1-10 alkyl group, with the proviso that if M is Mg, M' is not Al. It is preferred that said organometallic compound is beryllium dimethylaluminum isopropoxide, zinc dimethylgallium isopropoxide,. zinc diethylaluminum isopropoxide or cadmium dimethylaluminum tert-butoxide.
[0009] Said object is further achieved by a process for preparing a volatile organometallic compound of formula M[(µ-OR')2M'R2]2 wherein M is a divalent element selected from the group consisting of Be, Mg, Zn or Cd; M' is a Group 13 element selected from the group consisting of Al or Ga; and R and R' are each independently a C1-10 alkyl group, with the proviso that if M is Mg, M' is not Al, which comprises: (i) reacting an alkyl compound of Group 13 element of formula R3M' with an alcohol(R'OH) or with an alkoxide of the same element of formula M'(OR')3 to obtain a dialkylmetal alkoxide of formula R2M'OR'; (ii) reacting the dialkylmetal alkoxide with an alkali metal alkoxide of formula M"OR', wherein M" is an alkali metal such as Li, Na or K to obtain an alkali metal dialkylmetal alkoxide of formula M" (µ-OR')2M'R2; (iii) reacting the alkali metal dialkylmetal alkoxide with a divalent metal halide of formula MX2, wherein X is Cl, Br or I; and (iv) isolating the volatile organometallic compound.
[0010] The present invention also provides a process for preparing a volatile organometallic compound of formula M[(µ-OR')2M'R2]2 wherein M is a divalent element selected from the group consisting of Be, Mg, Zn and Cd; M' is a Group 13 element selected from the group consisting of Al and Ga; and R and R' are each independently a C1-10 alkyl group, with the proviso that if M is Mg, M' is not Al, which comprises (i) reacting an alkyl compound of Group 13 element of formula R3M' with an alcohol(R'OH) or with an alkoxide of the same element of formula M'(OR')3 to obtain a dialkylmetal alkoxide of formula R2M'OR'; (ii) reacting the dialkylmetal alkoxide with a divalent alkoxide (M(OR')2) in a molar ratio of 2:1; and (iii) isolating the volatile organometallic compound.
[0011] The present invention further provides a process for depositing a heterometallic oxide film of the MM'2O4 type on a substrate, which comprises contacting the vapor of a volatile organometallic compound of formula M[(µ-OR')2M'R2]2 with the substrate heated to a temperature above 300°C, wherein M is a divalent element selected from the group consisting of Be, Mg, Zn and Cd; M' is a Group 13 element selected from the group consisting of Al and Ga; and R and R' are each independently a C1-10 alkyl group, with the proviso that if M is Mg, M' is not Al.
It is preferred that the organometallic compound is vaporized at a temperature ranging from room temperature to 100°C.
[0012] It is further preferred that the substrate is a single crystal of silicon, glass, gallium arsenide or sapphire.
[0013] Fig. 1 shows the structure of zinc dimethylgallium isopropoxide (Zn [(µ-OPri)2GaMe2]2) crystal determined by X-ray crystallography.
[0014] The organometallic compound of the present invention is a highly volatile compound of formula M[(µ-OR')2M'R2]2 which has an M:M':O atomic ratio of 1:2:4. It can be, therefore, advantageously used in a CVD process for depositing an MM'2O4 type heterometallic oxide film on a substrate. In the organometallic compound of formula M[(µ-OR')2M'R2]2, M is a divalent element selected from the group consisting of Be, Mg, Zn or Cd; M' is a Group 13 element selected from the group consisting of Al or Ga; and R and R' are each independently a C1-10 alkyl group, with the proviso that if M is Mg, M' is not Al. The most preferred in practicing the present invention are: beryllium dimethylaluminum isopropoxide, Be[(µ-OPri)2AlMe2]2; zinc dimethylgallium isopropoxide, Zn[(µ-OPri)2GaMe2]2; zinc diethylaluminum isopropoxide, Zn[(µ-OPri)2AlEt2]2; and cadmium dimethylaluminum tert-butoxide, Cd[(µ-OBut)2AlMe2]2.
[0015] The organometallic compound of the present invention may be prepared by the following procedure: (i) an alkyl compound of a Group 13 element(R3M') is reacted with an alcohol(R'OH) or an alkoxide of the same element(M'(OR')3) to obtain a dialkylmetal alkoxide (R2M'OR') ; (ii) the dialkylmetal alkoxide is reacted with an alkali metal alkoxide(M"OR' wherein M" is an alkali metal such as Li, Na or K) to obtain an alkali metal dialkylmetal alkoxide (M"(µ-OR')2M'R2); and (iii) the alkali metal dialkylmetal alkoxide is reacted with a divalent metal halide (MX2) wherein X is Cl, Br or I, to obtain the desired product with the proviso that if M is Mg, M' is not Al. The above reaction steps may be shown as follows:
(i)
or
(ii)
(iii)
R and R' are each independently a C1-10 alkyl group;
M represents a divalent element selected from the group consisting of Be, Mg, Zn or Cd;
M' represents a Group 13 element selected from the group consisting of Al or Ga;
M" represents an alkali metal such as Li, Na or K; and
X represents Cl, Br or I.
[0016] In step (i), the alkyl compound of a Group 13 element may be reacted with either the alcohol in an equivalent ratio at a low temperature ranging from -20 °C to room temperature, or with the alkoxide of the same element in a molar ratio of 2:1 at room temperature. Further, in step (ii), the dialkylmetal alkoxide and the alkali metal alkoxide may be employed in an equivalent ratio, and in step (iii), the alkali metal dialkylmetal alkoxide and the divalent metal halide may be employed in a molar ratio of 2:1 at room temperature.
[0017] Either of the reactions in step (i) may be conducted without a solvent, while the reaction in step (ii) or (iii) may be carried out in an organic solvent such as diethyl ether, tetrahydrofuran or n-hexane, preferably under a nitrogen or argon atmosphere'.
[0018] Alternatively, the dialkylmetal alkoxide obtained in step (i) may be directly reacted with a divalent metal alkoxide(M(OR')2) in a molar ratio of 2:1 to obtain the desired product, as shown below:
wherein M, M', R and R' have the same meanings as defined above, with the proviso that if M is Mg, M' is not Al.
[0019] The organometallic compound prepared in accordance with the present invention may be preferably vaporized at a temperature ranging from room temperature to 100 °C.
[0020] A heterometallic oxide film of the MM'2O4 type may be deposited on a substrate by bringing the vapor of the inventive organometallic compound thus obtained into contact with the surface of a substrate preheated to a temperature above 300°C under a pressure of 1.33.10-3Pa to 13.33 Pa (1 x 10-5 to 1 x 10-1 Torr), preferably under a pressure ranging from 2.10-3 Pa to 1.6 Pa (1.5 x 10-5 to 1.2 x 10-2 Torr). The thermal decomposition of the organometallic compound presumably occurs via a pathway involving a β-hydrogen abstraction step, and the organic moieties thereof are converted cleanly to an equimolar mixture of an alkane and an olefin, leaving a minimal amount of residual carbon in the deposited oxide film. For example, beryllium dimethylalumium isopropoxide undergoes a thermal reaction to give an equimolar mixture of methane and propylene as a gaseous by-product, while depositing a clean BeAl2O4 film containing little carbon.
[0021] The substrate which may be used in practicing the present invention is any inorganic solid which is stable at or above the film deposition temperature, and examples thereof include glass, quartz, silicon, gallium arsenide, sapphire, alkali metal niobate, alkaline earth metal titanate, gallium nitride, niobium nitride and the like, among which single crystals of silicon, glass, gallium arsenide and sapphire are preferred when the coated substrate is intended for use in electronic applications.
[0022] The following Examples are provided only for the purpose of illustrating certain aspects of the present invention.
[0023] In each of Examples, the coated substrate obtained after treatment with the inventive organometallic compound was immediately transferred to an X-ray photoelectron spectroscope in order to minimize the exposure thereof to air.
Preparation of Organometallic Compounds
Example 1: Synthesis of beryllium dimethylaluminum isopropoxide, Be [(µ-OPri)2AlMe2]2
[0024] 0.72 g (10.9 mmol) of lithium isopropoxide was added to 1.27 g (10.9 mmol) of dimethylaluminum isopropoxide dissolved in diethyl ether and stirred for a day. 0.44 g (5.5 mmol) of beryllium chloride was then added thereto. The resulting mixture was stirred for a day and filtered.
[0025] The filtrate thus obtained was distilled under a reduced pressure to remove the solvent and the solid residue was sublimed under a vacuum at 70 °C to obtain 1.01 g (2.81 mmol; yield of 52 %) of the title compound in the form of a white solid.
[0026] 1H NMR analysis in benzene-d6 of the compound thus obtained showed peaks at δ -0.41(singlet, Al(CH3)2, 12H), 1.13 (doublet, OCH(CH3)2, 24H) and 4.00 (septet, OCH(CH3)2, 4H).
[0027] The X-ray photoelectron spectroscopic analysis of the compound thus obtained using ESCALAB MK II spectrometer(VG Scientific Ltd.) showed peaks corresponding to beryllium, aluminum, oxygen and carbon. The elemental composition of the compound(frozen at liquid nitrogen temperature) determined by comparing the photoelectron peak areas corresponded to a Be:Al:O:C atomic ratio of 1:2.01:4.78:16.59.
[0028] The compound thus obtained had a melting point of 56 °C and a vapor pressure of 13.33 to 14.66 Pa (1.00-1.10 x 10-1 Torr) at 31°C.
Example 2: Synthesis of zinc dimethylgallium isopropoxide, Zn[(µ-OPri)2GaMe2]2
[0029] 0.44 g (5.4 mmol) of sodium isopropoxide was added to 0.86 g (5.4 mmol) of dimethylgallium isopropoxide dissolved in diethyl ether and stirred for a day. 0.37 g (2.7 mmol) of zinc chloride was then added thereto. The resulting mixture was stirred for a day and filtered.
[0030] The filtrate thus obtained was distilled under a reduced pressure to remove the solvent and the solid residue was sublimed under a vacuum at 50 °C to obtain 0.95 g (1.9 mmol; yield of 70 %) of the title compound in the form of a white solid.
[0032] 1H NMR analysis in benzene-d6 of the compound thus obtained showed peaks at δ -0.05(singlet, Ga(CH3)2, 12H), 1.13(doublet, OCH(CH3)2, 24H) and 4.04(septet, OCH(CH3)2, 4H).
Example 3: Synthesis of zinc diethylaluminum isopropoxide, Zn[(µ-OPri)2AlEt2]2
[0033] 0.74 g (5.5 mmol) of zinc chloride was slowly added to 2.30 g(10.9 mmol) of lithium diethylaluminum isopropoxide dissolved in diethyl ether. The resulting mixture was stirred for a day and filtered.
[0034] The filtrate thus obtained was distilled under a reduced pressure to remove the solvent and the solid residue was sublimed under a vacuum at 50 °C to obtain 1.18 g (2.50 mmol; yield of 45 %) of the title compound in the form of a white solid.
Example 4: Synthesis of cadmium dimethylaluminum tert-butoxide, Cd[(µ-OBut)2AlMe2]2
[0035] 2.55 g (13.9 mmol) of cadmium chloride was slowly added to 5.84 g(27.8 mmol) of lithium dimethylaluminum tert-butoxide dissolved in tetrahydrofuran. The resulting mixture was stirred for 6 hours and filtered.
[0036] The filtrate thus obtained was distilled under a reduced pressure to remove the solvent and the solid residue was sublimed under a vacuum at 50 °C to obtain 3.4 g (6.56 mmol; yield of 47 %) of the title compound in the form of a white solid.
[0037] The compound thus obtained has a vapor pressure of 16.66 to 17.33 Pa (1.25-1.30 x 10-1 Torr) at 32°C.
Deposition of Heterometallic Oxide Films
Example 5
[0038] The compound prepared in Example 1 was vaporized at 60 °C and the vapor thereof was conveyed to a Si(100) substrate preheated to 400 °C for 1 hour and 40 minutes to deposit a film thereon. The X-ray photoelectron spectrum of the deposited film showed only the peaks corresponding to beryllium, aluminum, oxygen and carbon. The elemental composition of the film surface determined by comparing the photoelectron peak areas corresponded to a Be:Al:O atomic ratio of 1.0:2.3:5.6.
Example 6
[0039] The compound prepared in Example 1 was vaporized at 60 °C and the vapor thereof was conveyed to a Si(100) substrate preheated to 400 °C for 1 hour and 15 minutes to deposit a film thereon. The X-ray photoelectron spectrum of the deposited film showed only the peaks corresponding to beryllium, aluminum, oxygen and carbon. The elemental composition of the film surface determined by comparing the photoelectron peak areas corresponded to a Be:Al:O atomic ratio of 1.0:2.2:6.0.
[0040] Gaseous by-products evolved during the above CVD process were analyzed to be an equimolar mixture of methane and propylene. Thus, the thermal decomposition of beryllium dimethylaluminum isopropoxide proceeds via a pathway that cleanly removes the organic moieties as an alkane/olefin mixture.
Example 7
[0041] The compound prepared in Example 2 was vaporized at room temperature and the vapor thereof was conveyed to a Si(100) substrate preheated to 600 °C for 4 hours to deposit a film thereon. The X-ray photoelectron spectrum of the deposited film showed only the peaks corresponding to zinc, gallium, oxygen and carbon. The elemental composition of the film surface determined by comparing the photoelectron peak areas corresponded to a Zn:Ga:O atomic ratio of 1.0:2.4:6.6.
Example 8
[0042] The compound prepared in Example 2 was vaporized at room temperature and the vapor thereof was conveyed to a Si(100) substrate preheated to 400 °C for 6 hours to deposit a film thereon. The X-ray photoelectron spectrum of the deposited film showed only the peaks corresponding to zinc, gallium, oxygen and carbon. The elemental composition of the film surface determined by comparing the photoelectron peak areas corresponded to a Zn:Ga:O atomic ratio of 1.0:1.8:5.2.
Example 9
[0043] The compound prepared in Example 4 was vaporized at room temperature and the vapor thereof was conveyed to a Si(100) substrate preheated to 400 °C for 5 hours to deposit a film thereon. The X-ray photoelectron spectrum of the deposited film showed only the peaks corresponding to cadmium, aluminum, oxygen and carbon. The elemental composition of the film surface determined by comparing the photoelectron peak areas corresponded to a Cd:Al:O atomic ratio of 1.0:2.4:5.8.
[0044] As shown above, the organometallic compound having the formula of M[(µ-OR')2M'R2]2 of the present invention can be vaporized at a temperature ranging from room temperature to 100 °C, and therefore, it may be advantageously employed in the CVD of an MM'2O4 type heterometallic oxide film. In addition, the organometallic compound of the present invention may be used in the production of an MM'2O4 type heterometallic oxide powder and in the chemical vapor infiltration (CVI) of porous materials.
1. A volatile organometallic compound of formula M[(µ-OR')2M'R2]2 wherein M is a divalent element selected from the group consisting of Be, Mg, Zn
and Cd; M' is a Group 13 element selected from the group consisting of Al and Ga;
and R and R' are each independently a C1-10 alkyl group, with the proviso that if M is Mg, M' is not Al.
2. The organometallic compound of claim 1, which is beryllium dimethylaluminum isopropoxide,
zinc dimethylgallium isopropoxide, zinc diethylaluminum isopropoxide or cadmium dimethylaluminum
tert-butoxide.
3. A process for preparing a volatile organometallic compound of formula M[(µ-OR')2M'R2]2 wherein M Is a divalent element selected from the group consisting of Be, Mg, Zn
and Cd; M' is a Group 13 element selected from the group consisting of Al and Ga;
and R and R' are each independently a C1-10 alkyl group, with the proviso that if M is Mg, M' is not Al, which comprises
(i) reacting an alkyl compound of Group 13 element of formula R3M' with an alcohol(R'OH) or with an alkoxide of the same element of formula M'(OR')3 to obtain a dialkylmetal alkoxide of formula R2M'OR';
(ii) reacting the dialkylmetal alkoxide with an alkali metal alkoxide of formula M"OR', wherein M" is an alkali metal, to obtain an alkali metal dialkylmetal alkoxide of formula M"(µ-OR')2M'R2;
(iii) reacting the alkali metal dialkylmetal alkoxide with a divalent metal halide of formula MX2, wherein X is Cl, Br or I; and
(iv) isolating the volatile organometallic compound.
4. A process for preparing a volatile organometallic compound of formula M[(µ-OR')2M'R2]2; wherein M is a divalent element selected from the group consisting of Be, Mg, Zn
and Cd; M' is a Group 13 element selected from the group consisting of Al and Ga;
and R and R' are each independently a C1-10 alkyl group, with the proviso that if M is Mg, M' Is not Al, which comprises
(i) reacting an alkyl compound of Group 13 element of formula R3M' with an alcohol(R'OH) or with an alkoxide of the same element of formula M'(OR')3 to obtain a dialkylmetal alkoxide of formula R2M'OR';
(ii) reacting the dialkylmetal alkoxide with a divalent alkoxide(M(OR')2) in a molar ratio of 2:1; and
(iii) isolating the volatile organometallic compound.
5. A process for depositing a heterometallic oxide film of the MM'2O4 type on a substrate, which comprises contacting the vapor of a volatile organometallic
compound of formula M[(µ-OR')2M'R2]2 with the substrate heated to a temperature above 300°C, wherein M is a divalent element
selected from the group consisting of Be, Mg, Zn and Cd; M' is a Group 13 element
selected from the group consisting of Al and Ga; and R and R' are each independently
a C1-10 alkyl group, with the proviso that if M is Mg, M' is not Al.
6. The process of claim 5, wherein the organometallic compound is vaporized at a temperature
ranging from room temperature to 100°C.
7. The process of claim 5, wherein the substrate is a single crystal of silicon, glass,
gallium arsenide or sapphire.
1. Flüchtige organometallische Verbindung der Formel M[(µ-OR')2M'R2]2, worin M ein zweiwertiges Element ist, ausgewählt aus der Gruppe, bestehend aus Be,
Mg, Zn und Cd; M' ist ein Element der Gruppe 13, ausgewählt aus der Gruppe, bestehend
aus Al und Ga; und R und R' bedeuten jeweils unabhängig voneinander eine C1-10-Alkylgruppe, mit der Maßgabe, dass wenn M Mg ist, M' nicht Al ist.
2. Organometallische Verbindung nach Anspruch 1, ausgewählt aus Berylliumdimethylaluminiumisopropoxid,
Zinkdimethylgalliumisopropoxid, Zinkdiethylaluminiumisopropoxid und Cadmiumdimethylaluminium-tert-butoxid.
3. Verfahren zur Herstellung einer flüchtigen organometallischen Verbindung der Formel
M[(µ-OR')2M'R2]2, worin M ein zweiwertiges Element ist, ausgewählt aus der Gruppe, bestehend aus Be,
Mg, Zn und Cd; M' ist ein Element der Gruppe 13, ausgewählt aus der Gruppe, bestehend
aus Al und Ga; und R und R' bedeuten jeweils unabhängig voneinander eine C1-10-Alkylgruppe, mit der Maßgabe, dass wenn M Mg ist, M' nicht Al ist, umfassend
(i) das Umsetzen einer Alkylverbindung eines Elements der Gruppe 13 der Formel R3M' mit einem Alkohol (R'OH) oder mit einem Alkoxid des selben Elements der Formel M'(OR')3, um ein Dialkylmetallalkoxid der Formel R2M'OR' herzustellen;
(ii) das Umsetzen des Dialkylmetallalkoxids mit einem Alkalimetallalkoxid der Formel M"OR', worin M" ein Alkalimetall ist, um ein Alkalimetalldialkylmetallalkoxid der Formel M"(µ-OR')2M'R2 herzustellen;
(iii) das Umsetzen des Alkalimetalldialkylmetallalkoxids mit einem Halogenid eines zweiwertigen Metalls der Formel MX2, worin X Cl, Br oder I bedeutet; und
(iv) das Isolieren der flüchtigen organometallischen Verbindung.
4. Verfahren zur Herstellung einer flüchtigen organometallischen Verbindung der Formel
M[(µ-OR')2M'R2]2, worin M ein zweiwertiges Element ist, ausgewählt aus der Gruppe, bestehend aus Be,
Mg, Zn und Cd; M' ist ein Element der Gruppe 13, ausgewählt aus der Gruppe, bestehend
aus Al und Ga; und R und R' bedeuten jeweils unabhängig voneinander eine C1-10-Alkylgruppe, mit der Maßgabe, dass wenn M Mg ist, M' nicht Al ist, umfassend
(i) das Umsetzen einer Alkylverbindung eines Elements der Gruppe 13 der Formel R3M' mit einem Alkohol (R'OH) oder mit einem Alkoxid des selben Elements der Formel M'(OR')3, um ein Dialkylmetallalkoxid der Formel R2M'OR' herzustellen;
(ii) das Umsetzen des Dialkylmetallalkoxids mit einem zweiwertigen Alkoxid (M(OR')2) in einem molaren Verhältnis von 2:1; und
(iii) das Isolieren der flüchtigen organometallischen Verbindung.
5. Verfahren zum Abscheiden eines Films eines Heterometalloxids vom Typ MM'2O4 auf einem Substrat, umfassend das in Kontakt bringen des Dampfes einer flüchtigen
organometallischen Verbindung der Formel M[(µ-OR')2M'R2]2 mit dem Substrat, das auf eine Temperatur von oberhalb 300°C erwärmt wurde, worin
M ein zweiwertiges Element ist, ausgewählt aus der Gruppe, bestehend aus Be, Mg, Zn
und Cd; M' ist ein Element der Gruppe 13, ausgewählt aus der Gruppe, bestehend aus
Al und Ga; und R und R' bedeuten jeweils unabhängig voneinander eine C1-10-Alkylgruppe, mit der Maßgabe, dass wenn M Mg ist, M' nicht Al ist.
6. Verfahren nach Anspruch 5, wobei die organometallische Verbindung bei einer Temperatur
im Bereich von Raumtemperatur bis 100°C verdampft wurde.
7. Verfahren nach Anspruch 5, wobei das Substrat ein Einkristall von Silicium, Glas,
Galliumarsenid oder Saphir ist.
1. Composé organométallique volatile de formule M[(µ-OR')2M'R2]2, dans laquelle M est un élément divalent choisi à partir du groupe constitué de Be,
Mg, Zn et Cd ; M' est un élément du groupe 13 choisi à partir du groupe constitué
de Al et Ga ; et R et R' sont chacun indépendamment un groupe alkyle en C1 à C10, à condition que si M est Mg, M' n'est pas Al.
2. Composé organométallique selon la revendication 1, qui est l'isopropoxyde de diméthylaluminium
de béryllium, l'isopropoxyde de diméthylgallium de zinc, l'isopropoxyde de diéthylaluminium
de zinc ou le tert-butoxyde de diméthylaluminium de cadmium.
3. Procédé de préparation d'un composé organométallique volatile de formule M[(µ-OR')2M'R2]2, dans laquelle M est un élément divalent choisi à partir du groupe constitué de Be,
Mg, Zn et Cd ; M' est un élément du groupe 13 choisi à partir du groupe constitué
de Al et Ga ; et R et R' sont chacun indépendamment un groupe alkyle en C1 à C10, à condition que si M est Mg, M' n'est pas Al, qui comprend :
(i) une réaction d'un composé alkyle d'un élément du groupe 13 de formule R3M' avec un alcool (R'OH) ou avec un alcoxyde du même élément de formule M'(OR')3 pour obtenir un alcoxyde de dialkylmétal de formule R2M'OR' ;
(ii) une réaction de l'alcoxyde de dialkylmétal avec un alcoxyde de métal alcalin de formule M"OR', dans laquelle M" est un métal alcalin, pour obtenir un alcoxyde de dialkylmétal de métal alcalin de formule M"(µ-OR')2M'R2 ;
(iii) une réaction de l'alcoxyde de dialkylmétal de métal alcalin avec un halogénure de métal divalent de formule MX2, dans laquelle X est Cl, Br ou I ; et
(iv) l'isolement du composé organométallique volatile.
4. Procédé de préparation d'un composé organométallique volatile de formule M[(µ-OR')2M'R2]2, dans laquelle M est un élément divalent choisi à partir du groupe constitué de Be,
Mg, Zn et Cd ; M' est un élément du groupe 13 choisi à partir du groupe constitué
de Al et Ga ; et R et R' sont chacun indépendamment un groupe alkyle en C1 à C10, à condition que si M est Mg, M' n'est pas Al, qui comprend :
(i) une réaction d'un composé alkyle d'un élément du groupe 13 de formule R3M' avec un alcool (R'OH) ou avec un alcoxyde du même élément de formule M'(OR')3 pour obtenir un alcoxyde de dialkylmétal de formule R2M' OR' ;
(ii) une réaction de l'alcoxyde de dialkylmétal avec un alcoxyde divalent de formule (M(OR')2) dans un rapport molaire de 2:1 ; et
(iii) l'isolement du composé organométallique volatile.
5. Procédé pour déposer un film d'oxyde hétérométallique du type MM'2O4 sur un substrat, qui comprend la mise en contact de la vapeur d'un composé organométallique
volatile de formule M[(µ-OR')2M'R2]2 avec le substrat chauffé à une température supérieure à 300°C, dans laquelle M est
un élément divalent choisi à partir du groupe constitué de Be, Mg, Zn et Cd ; M' est
un élément du groupe 13 choisi parmi le groupe composé de Al et Ga ; et R et R' sont
chacun indépendamment un groupe alkyle en C1 à C10, à condition que si M est Mg, M' n'est pas Al.
6. Procédé selon la revendication 5, dans lequel le composé organométallique est vaporisé
à une température comprise dans la plage allant de la température ambiante à 100°C.
7. Procédé selon la revendication 5, dans lequel le substrat est un monocristal de silicium,
du verre, de l'arséniure de gallium ou un saphir.