(19)
(11) EP 2 259 327 A3

(12) EUROPEAN PATENT APPLICATION

(88) Date of publication A3:
29.06.2011 Bulletin 2011/26

(43) Date of publication A2:
08.12.2010 Bulletin 2010/49

(21) Application number: 10180038.1

(22) Date of filing: 14.11.2002
(51) International Patent Classification (IPC): 
H01L 29/78(2006.01)
H01L 21/265(2006.01)
 H01L 21/336(2006.01)
H01L 29/872(2006.01)
(84) Designated Contracting States:
DE FR GB IT

(62) Application number of the earlier application in accordance with Art. 76 EPC:
02425695.0 / 1420457

(71) Applicant: STMicroelectronics S.r.l.
20041 Agrate Brianza (MI) (IT)

(72) Inventors:
  • Magrì, Angelo
    95032, Belpasso (IT)
  • Frisina, Ferruccio
    95030, Sant'Agata Li Battiati (IT)

(74) Representative: Pellegri, Alberto 
Società Italiana Brevetti S.p.A. Via Carducci, 8
20123 Milano
20123 Milano (IT)

   


(54) Insulated gate power semiconductor device with Schottky diode and manufacturing method thereof


(57) An insulated gate planar power device with a Schottky diode in parallel thereto, said Schottky diode being realized by contacting with a metal layer a semiconductor substrate of a first type of conductivity and the contact zone being laterally surrounded by one or more diffused regions of opposite type of conductivity formed in said substrate for shielding the electric field under conditions of reverse bias of the diode, characterized in that it comprises, in said semiconducting substrate, a buried region doped with a dopant of opposite type of conductivity to that of said semiconductor substrate, geometrically located under said Schottky contact zone and at a greater depth than the depth of said diffused regions.
A relative process of fabrication is also disclosed.







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