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(11) | EP 1 998 373 A3 |
| (12) | EUROPEAN PATENT APPLICATION |
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| (54) | Semiconductor device having oxide semiconductor layer and manufacturing method thereof |
| (57) The invention provides an active matrix display device comprising a pixel portion
including a thin film transistor having a multi-gate structure, the thin film transistor
including a first gate electrode and a second gate electrode over a substrate wherein
the first gate electrode and the second gate electrode are connected to each other;
an insulating film over the first gate electrode and the second gate electrode; and
an oxide semiconductor film over the first gate electrode and the second gate electrode
with the insulating film interposed there between; a source electrode and a drain
electrode formed on the oxide semiconductor film; and a pixel electrode electrically
connected to one of the source electrode and the drain electrode; wherein each of
the source electrode and the drain electrode comprises a titanium film formed on the
oxide semiconductor film.
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