EP 0667026 A4 19981021 - FLASH MEMORY SYSTEM, AND METHODS OF CONSTRUCTING AND UTILIZING SAME.
Title (en)
FLASH MEMORY SYSTEM, AND METHODS OF CONSTRUCTING AND UTILIZING SAME.
Title (de)
FLASH-SPEICHERSYSTEM-UND VERFAHREN ZUR HERSTELLUNG UND ZUR VERWENDUNG DESSELBEN.
Title (fr)
SYSTEME DE MEMOIRE FLASH ET SES PROCEDES DE CONSTRUCTION ET D'UTILISATION.
Publication
Application
Priority
- US 9310485 W 19931102
- US 97092192 A 19921102
Abstract (en)
[origin: WO9410686A1] An N-channel SNOS or SONOS type memory array (100) has programmable memory states with a negative, depletion mode threshold lower in magnitude than the supply voltage VCC when erased and a positive threshold when programmed. During reading, the supply voltage VCC is applied to the drain (16), while a positive voltage VR less than VCC-Vds,sat is applied to the source (14), where Vds,sat is the saturation voltage of the device. A reference voltage may also be applied to the substrate (11) during a read operation. Selected devices have VR applied to the gate (12), while inhibited devices have ground or the substrate potential VSS applied to the gate (12).
IPC 1-7
IPC 8 full level
G11C 17/00 (2006.01); G11C 11/22 (2006.01); G11C 16/04 (2006.01); G11C 16/26 (2006.01); H01L 21/765 (2006.01); H01L 21/8246 (2006.01); H01L 21/8247 (2006.01); H01L 27/10 (2006.01); H01L 27/115 (2006.01); H01L 29/788 (2006.01); H01L 29/792 (2006.01)
CPC (source: EP KR)
G11C 16/0466 (2013.01 - EP KR); G11C 16/16 (2013.01 - KR); G11C 16/26 (2013.01 - EP); H01L 21/02532 (2013.01 - KR); H01L 21/0254 (2013.01 - KR); H01L 21/02554 (2013.01 - KR); H01L 21/765 (2013.01 - EP KR); H01L 29/792 (2013.01 - EP KR); H10B 41/30 (2023.02 - EP); H10B 43/30 (2023.02 - EP); H10B 69/00 (2023.02 - EP)
Citation (search report)
- [A] US 4017888 A 19770412 - CHRISTIE KENNETH HOWARD, et al
- [A] US 4611308 A 19860909 - LONKY MARTIN L [US]
- [A] US 3992701 A 19761116 - ABBAS SHAKIR A, et al
- [A] PATENT ABSTRACTS OF JAPAN vol. 014, no. 179 (P - 1034) 10 April 1990 (1990-04-10)
- See references of WO 9410686A1
Designated contracting state (EPC)
DE FR GB IT NL
DOCDB simple family (publication)
WO 9410686 A1 19940511; AU 5545794 A 19940524; EP 0667026 A1 19950816; EP 0667026 A4 19981021; JP H08507411 A 19960806; KR 100354406 B1 20021226; KR 950704790 A 19951120
DOCDB simple family (application)
US 9310485 W 19931102; AU 5545794 A 19931102; EP 94900481 A 19931102; JP 51137794 A 19931102; KR 19950701733 A 19950502