EP 0715770 A1 19960612 - PLANAR ISOLATION METHOD FOR USE IN FABRICATION OF MICROELECTRONICS
Title (en)
PLANAR ISOLATION METHOD FOR USE IN FABRICATION OF MICROELECTRONICS
Title (de)
PLANARE ISOLATION FÜR DIE HERSTELLUNG MIKROELEKTRONISCHER ANORDNUNGEN
Title (fr)
PROCEDE D'ISOLEMENT PLANAR APTE A ETRE UTILISE DANS L'INDUSTRIE DE LA MICROELECTRONIQUE
Publication
Application
Priority
- US 9407958 W 19940715
- US 11757493 A 19930903
Abstract (en)
[origin: WO9506956A1] A method of electrically isolating individual devices during the fabrication of microelectronic devices. The method is intended to replace oxide isolation methods currently used in the semiconductor industry. In a first embodiment of the present invention, the regions of a silicon substrate that are to be formed into isolation structures are exposed to a dose or doses of a noble gas implant. The noble gas implant can be preceded by a germanium implant in order to create an amorphous layer within the substrate, as a means of reducing the lateral damage caused by the noble gas implant. The noble gas implant is followed by a short time, low temperature furnace anneal which stabilizes the implanted regions. The noble gas implant suppresses epitaxial regrowth in the implanted regions, producing high resistivity and reducing leakage currents to a negligible level. In a second embodiment of the present invention, the regions of a silicon substrate that are to be formed into isolation structures are exposed to a dose or doses of germanium. The germanium implant is then followed by a short time, a low temperature furnace anneal. In either embodiment of the invention, the result is a highly effective, substantially planar isolation structure which overcomes many of the disadvantages of standard isolation techniques.
IPC 1-7
IPC 8 full level
H01L 21/761 (2006.01); H01L 21/265 (2006.01); H01L 21/76 (2006.01)
CPC (source: EP US)
H01L 21/26506 (2013.01 - EP US); H01L 21/2658 (2013.01 - EP US); H01L 21/76 (2013.01 - EP)
Citation (search report)
See references of WO 9506956A1
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
WO 9506956 A1 19950309; EP 0715770 A1 19960612; JP H09502303 A 19970304
DOCDB simple family (application)
US 9407958 W 19940715; EP 94922567 A 19940715; JP 50810295 A 19940715