EP 0760167 A1 19970305 - SEMICONDUCTOR STRUCTURE WITH ONE OR MORE LATERAL HIGHLY BLOCKING SEMICONDUCTOR COMPONENTS
Title (en)
SEMICONDUCTOR STRUCTURE WITH ONE OR MORE LATERAL HIGHLY BLOCKING SEMICONDUCTOR COMPONENTS
Title (de)
HALBLEITERSTRUKTUR MIT EINEM ODER MEHREREN LATERALEN, HOCH SPERRENDEN HALBLEITERBAUELEMENTEN
Title (fr)
STRUCTURE A SEMI-CONDUCTEURS COMPORTANT UN OU PLUSIEURS COMPOSANTS SEMI-CONDUCTEURS LATERAUX BLOQUANT HAUT
Publication
Application
Priority
- DE 4201276 A 19920118
- EP 9202985 W 19921223
Abstract (en)
[origin: DE4201276C1] The object of the invention is a semiconductor structure with one or more lateral highly blocking semiconductor components in a semiconductor consisting of a metallised substrate (2), a dielectric layer (3) adjoining the substrate, a uniformly doped drift region (4) above the dielectric layer and heavily doped regions of the semiconductor components which are embedded in the drift region and electrically bonded. At least the regions (5, 6) of the semiconductor components, which can, during relevant operation of said components, exhibit a high potential difference with respect to the substrate, extend as far as the dielectric layer (3).
IPC 1-7
IPC 8 full level
H01L 21/762 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01); H01L 29/861 (2006.01)
CPC (source: EP US)
H01L 21/76251 (2013.01 - EP US); H01L 29/405 (2013.01 - EP US); H01L 29/861 (2013.01 - EP US)
Citation (search report)
See references of WO 9314522A1
Designated contracting state (EPC)
BE CH DE DK ES FR GB IT LI LU NL SE
DOCDB simple family (publication)
DE 4201276 C1 19930617; EP 0760167 A1 19970305; US 5578859 A 19961126; WO 9314522 A1 19930722
DOCDB simple family (application)
DE 4201276 A 19920118; EP 9202985 W 19921223; EP 93901752 A 19921223; US 25658894 A 19940718